Structural and Optical Properties of Multilayer Heterostructure of CdTe/CdSe Thin Films

2019 ◽  
Vol 233 (9) ◽  
pp. 1215-1231 ◽  
Author(s):  
Farzana Majid ◽  
Abdul Malik ◽  
Sadia Ata ◽  
Zaheer Hussain ◽  
Ismat Bibi ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Visible Region ◽  
Xrd Analysis ◽  
Band Alignment ◽  
Phonon Modes ◽  
Structural And Optical Properties ◽  
Thermal Evaporation Method ◽  
Multilayer Heterostructures

Abstract CdTe/CdSe multilayer heterostructures thin films were prepared by thermal evaporation method. The CdTe/CdSe layers deposited on glass substrate and effects of annealing temperature on optical and structural properties of thin films were investigated. The XRD analysis revealed that CdTe and CdSe were in cubic (111) and hexagonal (100) forms. By increasing the annealing temperature, intensity of XRD peaks increased for multilayer heterostructures. Band alignment in heterostructures of CdTe/CdSe was of type II. Energy band gaps values for CdTe/CdSe multilayer heterostructures increased with respect to bulk compounds. During emission, red and blue shifts are observed in visible region in photoluminescence spectrum of CdTe/CdSe samples. Due to better crystallinity of multilayer thin film, 1LO, 2LO and 3LO phonon modes were observed in Raman spectrum.

scholarly journals Annealing Effect on the Thermoelectric Properties of Bi2Te3Thin Films Prepared by Thermal Evaporation Method

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jyun-Min Lin ◽  
Ying-Chung Chen ◽  
Chi-Pi Lin
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Si Substrates ◽  
Seebeck Coefficients

Bismuth telluride-based compounds are known to be the best thermoelectric materials within room temperature region, which exhibit potential applications in cooler or power generation. In this paper, thermal evaporation processes were adopted to fabricate the n-type Bi2Te3thin films on SiO2/Si substrates. The influence of thermal annealing on the microstructures and thermoelectric properties of Bi2Te3thin films was investigated in temperature range 100–250°C. The crystalline structures and morphologies were characterized by X-ray diffraction and field emission scanning electron microscope analyses. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature. The experimental results showed that both the Seebeck coefficient and power factor were enhanced as the annealing temperature increased. When the annealing temperature increased to 250°C for 30 min, the Seebeck coefficient and power factor of n-type Bi2Te3-based thin films were found to be about −132.02 μV/K and 6.05 μW/cm·K2, respectively.

scholarly journals Bandgap Engineering of Bilayer Ge/CdS Thin Films via Interlayer Diffusion under Different Annealing Temperatures

2019 ◽  
Vol 2019 ◽  
pp. 1-10
Author(s):  
Faheem Amin ◽  
Syedah Afsheen Zahra ◽  
Muhammad Sultan ◽  
Sajjad Hussain Mirza ◽  
Fahad Azad
Keyword(s):  
Thin Films ◽  
Glass Substrate ◽  
Structural Changes ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Rutherford Backscattering ◽  
Bandgap Engineering ◽  
Thermal Evaporation Method ◽  
Annealing Temperatures ◽  
Cds Thin Films

Bilayer thin films of Ge/CdS have been deposited on a glass substrate through thermal evaporation method. The obtained Ge/CdS samples were annealed at temperatures up to 400°C to observe the resulting effect on the structural changes in the film. The bandgap of the annealed films was found to increase with increasing annealing temperature which can be attributed to the increased interlayer diffusion. The interlayer diffusion was found to take effect above a temperature of 300°C which was confirmed by the Rutherford backscattering technique. Complementary XPS was done to investigate the surface stoichiometry of the bilayers.

Effect of Annealing Temperature on the Optical Parameters of CdS Thin Films Prepared by Thermal Evaporation Method

2013 ◽  
Vol 747 ◽  
pp. 329-332
Author(s):  
Thitinai Gaewdang ◽  
Ngamnit Wongcharoen ◽  
Tiparatana Wongcharoen
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Optical Parameters ◽  
Spectral Transmission ◽  
Dispersion Energy ◽  
Thermal Evaporation Method ◽  
Transmission Data ◽  
Cds Thin Films

CdS thin films were prepared by thermal evaporation onto glass substrate in vacuum better than 5.5x10-5 mbar. The obtained films were subsequently annealed in a pure nitrogen atmosphere at temperature between 100 to 500°C for 30 min. The crystal structure and surface morphology of the as-deposited and annealed films were investigated by XRD and SEM, respectively. Optical band gap and Urbach tail values of the films, determined from spectral transmission data, were found to be slightly varied in the range 2.36-2.40 eV and 110-160 meV, respectively, due to annealing temperature. The refractive index of the films was also evaluated from the spectral transmission data. The dependence of the refractive index on the wavelength obeys the single oscillator model, from which the important parameters such as refractive index, extinction coefficient, oscillator energy (E0) and dispersion energy (Ed) of the films with different annealing temperatures were determined. From the experimental results, the optical parameters of the films are obviously influenced by annealing temperature.

Structural Properties of PbI2 Thin Film

2014 ◽  
Vol 879 ◽  
pp. 175-179 ◽  
Author(s):  
Safaa I. Mohammed ◽  
Naser Mahmoud Ahmed ◽  
Y. Al-Douri ◽  
U. Hashim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Analysis ◽  
Film Thickness ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Lead Iodide ◽  
Thermal Evaporation Method ◽  
Growth Orientation

Lead iodide (PbI2) thin films were successfully prepared by thermal evaporation method on a glass substrate at room temperature. The structural analysis of these films was done by XRD. The results revealed that the crystallite size increases when increasing the film thickness and annealing temperature. In addition, the preferred growth orientation was 001 for all the samples.

Structural and Optical Properties of Thermally Evaporated BiSb2S3 Thin Films

2013 ◽  
Vol 678 ◽  
pp. 123-130 ◽  
Author(s):  
K. Kandaswamy ◽  
Panneerselvam Chirstopher Selvin ◽  
B. Nalini ◽  
I. Mohamed Abdulla ◽  
K.P. Abhilash
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Orthorhombic Phase ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Vacuum Thermal Evaporation ◽  
Different Thickness ◽  
Absorption Measurements

Thin films of Bi1.5(Sb2S3)0.5of different thickness were deposited on glass substrate by vacuum thermal evaporation method and annealed at different temperature. The elemental compositions of the films were confirmed by energy dispersive X-ray analysis (EDAX). The prepared films were structurally and morphologically characterized by X-ray diffraction (XRD) and microscopic (SEM & AFM) techniques respectively. It has been confirmed that the films possess polycrystalline nature with orthorhombic phase and the grain size of the films vary from 27.92 to 81.37 nm. The observed bandgap energies (varying from 1.787eV to 1.963 eV) of the films and its temperature dependence were estimated from optical absorption measurements.

scholarly journals Optical and Electrical Properties of Ag-Doped In2S3Thin Films Prepared by Thermal Evaporation

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
Peijie Lin ◽  
Sile Lin ◽  
Shuying Cheng ◽  
Jing Ma ◽  
Yunfeng Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Hall Measurement System

Ag-doped In2S3(In2S3:Ag) thin films have been deposited onto glass substrates by a thermal evaporation method. Ag concentration is varied from 0 at.% to 4.78 at.%. The structural, optical, and electrical properties are characterized using X-ray diffraction (XRD), spectrophotometer, and Hall measurement system, respectively. The XRD analysis confirms the existence of In2S3and AgIn5S8phases. With the increase of the Ag concentration, the band gap of the films is decreased gradually from 2.82 eV to 2.69 eV and the resistivity drastically is decreased from ~103to5.478×10-2 Ω·cm.

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