Asymmetry in surface morphology and dislocation nucleation of In1−xGaxAs/001) InP single heteroepitaxial layers

1989 ◽  
Vol 189 (3-4) ◽  
Author(s):  
G. Wagner ◽  
P. Paufler ◽  
G. Rohde
Keyword(s):  
Surface Morphology ◽  
Dislocation Structure ◽  
Dislocation Nucleation ◽  
Heteroepitaxial Layers

AbstractThe surface morphology and the dislocation structure of MOCVD grown In

Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates

1998 ◽  
Vol 264-268 ◽  
pp. 207-210 ◽  
Author(s):  
Tetsuo Takahashi ◽  
Yuuki Ishida ◽  
Hajime Okumura ◽  
Sadafumi Yoshida ◽  
Toshihiro Sekigawa
Keyword(s):  
Surface Morphology ◽  
Si Substrates ◽  
Heteroepitaxial Layers

scholarly journals Evolving Surface Cusps During Strained Layer Epitaxy

1993 ◽  
Vol 312 ◽  
Author(s):  
D. E. Jesson ◽  
S. J. Pennycook ◽  
J.-M. Baribeau ◽  
D. C. Houghton
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Dislocation Nucleation ◽  
Contrast Imaging ◽  
Stress Concentrations ◽  
Marker Layer ◽  
Evolving Surface ◽  
Z Contrast

AbstractWe have combined Z-contrast imaging and Ge marker layer experiments to study the evolving surface morphology of SixGel-x alloys grown by molecular beam epitaxy (MBE). Surface cusps are seen to arise as the intersection lines between coherent islands. The potential implications of stress concentrations associated with cusps are considered with a view to strain relaxation in the film via dislocation nucleation.

The dislocation structure of a 10° [110] tilt boundary in silicon

1983 ◽  
Vol 41 ◽  
pp. 114-115
Author(s):  
B. Cunningham ◽  
D.G. Ast
Keyword(s):  
Dislocation Structure ◽  
Tilt Angle ◽  
Imaging Technique ◽  
Diamond Lattice ◽  
Tilt Boundary ◽  
Formation Mechanisms ◽  
Diffraction Contrast ◽  
Lattice Fringe ◽  
Tilt Boundaries ◽  
Chemically Vapor Deposited

There have Been a number of studies of low-angle, θ < 4°, [10] tilt boundaries in the diamond lattice. Dislocations with Burgers vectors a/2<110>, a/2<112>, a<111> and a<001> have been reported in melt-grown bicrystals of germanium, and dislocations with Burgers vectors a<001> and a/2<112> have been reported in hot-pressed bicrystals of silicon. Most of the dislocations were found to be dissociated, the dissociation widths being dependent on the tilt angle. Possible dissociation schemes and formation mechanisms for the a<001> and a<111> dislocations from the interaction of lattice dislocations have recently been given.The present study reports on the dislocation structure of a 10° [10] tilt boundary in chemically vapor deposited silicon. The dislocations in the boundary were spaced about 1-3nm apart, making them difficult to resolve by conventional diffraction contrast techniques. The dislocation structure was therefore studied by the lattice-fringe imaging technique.

An Established Epithelial Cell Line (NPC/HK1) from a Nasopharyngeal Carcinoma - II. A Sem Study

1982 ◽  
Vol 40 ◽  
pp. 224-225
Author(s):  
Li C.L. ◽  
Chew E.C. ◽  
Huang D.P. ◽  
Ho H.C. ◽  
Mak L.S. ◽  
...  
Keyword(s):  
Nasopharyngeal Carcinoma ◽  
Epithelial Cell ◽  
Surface Morphology ◽  
Cell Line ◽  
Epithelial Cell Line ◽  
Present Communication ◽  
Cells In Culture ◽  
Sem Study ◽  
Well Differentiated

An epithelial cell line, NPC/HK1, has recently been successfully established from a nasopharyngeal carcinoma of the moderately to well differentiated squamous type. The present communication reports on the surface morphology of the NPC/HK1 cells in culture.

Mechanical Properties and Dislocation Structure of Single Crystal Cdte Deformed in Compression at 300°C

1976 ◽  
Vol 34 ◽  
pp. 592-593
Author(s):  
Ernest L. Hall ◽  
J. B. Vander Sande
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Dislocation Structure ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Strain Curve ◽  
Optical Devices ◽  
Semiconductor Compound ◽  
Wide Range ◽  
Sample Orientation

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.

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