ABOUT HEAT CAPACITY OF TITANIUM CARBIDE TiCx

Author(s):  
I. Khidirov ◽  
V. V. Getmanskiy ◽  
A. S. Parpiev ◽  
Sh. A. Makhmudov

This work relates to the field of thermophysical parameters of refractory interstitial alloys. The isochoric heat capacity of cubic titanium carbide TiCx has been calculated within the Debye approximation in the carbon concentration  range x = 0.70–0.97 at room temperature (300 K) and at liquid nitrogen temperature (80 K) through the Debye temperature established on the basis of neutron diffraction analysis data. It has been found out that at room temperature with decrease of carbon concentration the heat capacity significantly increases from 29.40 J/mol·K to 34.20 J/mol·K, and at T = 80 K – from 3.08 J/mol·K to 8.20 J/mol·K. The work analyzes the literature data and gives the results of the evaluation of the high-temperature dependence of the heat capacity СV of the cubic titanium carbide TiC0.97 based on the data of neutron structural analysis. It has been proposed to amend in the Neumann–Kopp formula to describe the high-temperature dependence of the titanium carbide heat capacity. After the amendment, the Neumann–Kopp formula describes the results of well-known experiments on the high-temperature dependence of the heat capacity of the titanium carbide TiCx. The proposed formula takes into account the degree of thermal excitation (a quantized number) that increases in steps with increasing temperature.The results allow us to predict the thermodynamic characteristics of titanium carbide in the temperature range of 300–3000 K and can be useful for materials scientists.

2008 ◽  
Vol 600-603 ◽  
pp. 1063-1066 ◽  
Author(s):  
Konstantin Vassilevski ◽  
Keith P. Hilton ◽  
Nicolas G. Wright ◽  
Michael J. Uren ◽  
A.G. Munday ◽  
...  

Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p+-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normally-on 4H-SiC TI-VJFETs had specific on-state resistance (RO-S ) of 8 mW×cm2 measured at room temperature. These devices operated reversibly at a current density of 100 A/cm2 whilst placed on a hot stage at temperature of 500 °C and without any protective atmosphere. The change of RO-S with temperature rising from 20 to 500 °C followed a power law (~ T 2.4) which is close to the temperature dependence of electron mobility in 4H-SiC.


1994 ◽  
Vol 365 ◽  
Author(s):  
J.I. Eldridge

ABSTRACTThe potential use of fiber-reinforced composite materials for high temperature applications makes the development of interface test methodology at those high temperatures very desirable. A facility for performing high temperature fiber push-out tests will be described with emphasis on critical issues in experimental procedure. Examples from several composite systems illustrate the temperature dependence and environmental sensitivity of fiber debonding and sliding. Interpretation of the temperature dependence will be made primarily in terms of changes in residual stresses along with additional effects due to changes in matrix ductility and interfacial wear. Examples will show that high temperature fiber push-out testing can often distinguish between chemical and frictional fiber/matrix bonding in cases where room temperature only testing cannot.


2017 ◽  
Vol 07 (05) ◽  
pp. 1750032
Author(s):  
S. Grabovsky ◽  
I. Shnaidshtein ◽  
J. Przeslawski ◽  
Zhenrong Li ◽  
Zhuo Xu ◽  
...  

The temperature dependence of the specific heat of the single crystal Pb(In[Formula: see text]Nb[Formula: see text])O3-Pb(Mg[Formula: see text]Nb[Formula: see text])O3-PbTiO3 (PIN-PMN-PT) was obtained at 80–500[Formula: see text]K by means of ac-calorimetry, and comparison with the calorimetric data for PMN was made, allowing one to determine absolute values of the specific heat of PIN-PMN-PT. For the high-temperature region ([Formula: see text][Formula: see text]K), the background heat capacity was calculated, the anomalies of the heat capacity for both compounds were determined, and the hump of the temperature dependence of specific heat PIN-PMN-PT was detected for the first time.


2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Ying Sun ◽  
Yan-Feng Guo ◽  
Yoshihiro Tsujimoto ◽  
Xia Wang ◽  
Jun Li ◽  
...  

The physical properties of polycrystalline Mn3SbN were investigated using measurements of the magnetic, calorimetric, and electronic transport properties. At room temperature, the phase crystallizes in a tetragonal structure withP4/mmmsymmetry. A remarkably sharp peak in the heat capacity versus temperature curve was found near 353 K. The peak reaches 723 J mol−1 K−1at its highest, which corresponds to a transition entropy of 10.2 J mol−1 K−1. The majority of the large entropy change appears to be due to lattice distortion from the high-temperature cubic structure to the room-temperature tetragonal structure and the accompanying Ferrimagnetic transition.


2015 ◽  
Vol 1760 ◽  
Author(s):  
Zhenghao M. T. Chin ◽  
Norihiko L. Okamoto ◽  
Haruyuki Inui

ABSTRACTThe effects of alloying elements (Ni/Ta) on the temperature dependence of yield stress in Co3(Al,W) with the L12 structure have been investigated through compression tests of nearly single-phase polycrystalline alloys in the temperature range between room temperature to 1,473K. Compared with a ternary Co3(Al,W), a Ni/Ta-added Co3(Al,W) alloy exhibits a higher γ΄ solvus temperature and lower onset temperature of the yield stress anomaly (positive temperature dependence of yield stress), suggesting that the CSF energy is increased by Ni/Ta addition. As a consequence, the high-temperature strength in Co3(Al,W) is considerably enhanced.


2014 ◽  
Vol 70 (a1) ◽  
pp. C1807-C1807
Author(s):  
Lothar Fink ◽  
Nicole Rademacher ◽  
Thomas Hartmann

An impressive comparison of G(r) calculated with PDFgetX2(1) from data of Naphthalen taken at room temperature with a Stoe Stadi P powder diffractometer in Transmission mode equipped with a Ag-tube, a Ge(111)-monochromator for pure Ag-Kα1-radiation (0.5594 Å) as well as the Dectris MYTHEN 1K with1mm chip size and from synchrotron data, beamline X17A, NSLS Brookhaven with a wavelength of 0.1839 Å, yields amazingly similar peak widths for both experiment sites. To observe the temperature dependence of this resolution, the same laboratory setup with an additional Oxford Cryosystems Cobra or a Stoe furnace has been chosen to compare the signal width as a function of T. Low temperature data for these PDF calculation experiments has been taken from LaB6 as a crystalline standard and Naphthalene as well known organic phase. In addition high temperature G(r)-data from Ammonium Nitride will be demonstrated.


2015 ◽  
Vol 16 (1) ◽  
pp. 136-139
Author(s):  
N. Yu. Filonenko

The thermodynamic quantities for iron monoboride FeB, such as entropy, enthalpy, heat capacity and their temperature dependence, are considered. It is shown, that accounting for contribution to the zeroth-order high-temperature expansion of thermodynamic potential for Fe-B binary alloy enables to describe forming monoboride FeB in more complete way from the viewpoint of thermodynamics.


2020 ◽  
Vol 12 (2) ◽  
pp. 81-86 ◽  
Author(s):  
Rajanigandha Barik ◽  
Santosh K. Satpathy ◽  
Banarji Behera ◽  
Susanta K. Biswal ◽  
Ranjan K. Mohapatra

Background: Lithium Niobate (LiNbO3) is a ferroelectric material suitable for a variety of applications. Its versatilityis made possible by the excellent electro-optic, nonlinear, and piezoelectric properties of the intrinsic material. Objective: Study of structural, microstructural and electrical propertiesare to understand the structure and topography of the composites. Methods: The sample of LiNbO3 was prepared by solid state reaction method at high temperature using high purity ingredients. Results: The analysis of the X-ray diffraction at room temperature confirmed the trigonal structure. The grains are more or less homogeneously distributed throughout the surface. The dielectric constant and dielectric loss are decreases with increase in frequency. The material has high dielectric constant and low dielectric loss at room temperature. The magnitude of real impedance decreases with rise in temperature which shows negative temperature coefficient of resistance behavior.The nature of the conductivity in solids is analyzed which obeyed Jonscher’s power law. The temperature-dependence of dc conductivity indicates that the electrical conduction in the material is a thermally activated process. Conclusion: The compound exhibits a dielectric anomaly at high temperature suggesting ferroelectric–paraelectric phase transition. The activation energy of the material is found to be 0.00184 eV in the high temperature region of Arrhenius plot for electrical conductivity. The nature of temperature dependence of the dc conductivity exhibited the NTCR behaviour of the material.


1986 ◽  
Vol 41 (1-2) ◽  
pp. 305-310
Author(s):  
D. T. Amm ◽  
S. L. Segel ◽  
T. J. Bastow ◽  
K. R. Jeffrey

The temperature dependence of the 23NaOH Pure Quadrupole Resonance Frequency has been studied from 77 K to 550 K and shows a change in slope and a discontinuous change in frequency of 6 ± 2 kHz at the orthorhombic to monoclinic phase transition at 505 K At 292 K the 23Na NQR frequency is 1.778 ± 0.001 MHz, η < 0 .04. The temperature dependence of the deuterium quadrupole coupling was fit to a librating molecule model between 293 K and 570 K (QCC = 245 ± 2 kHz, η = 0.05 ± 0 .0 1 at 293 K) and confirms that the frequency of the libration decreases in the high temperature monoclinic phase. X-ray studies indicate that down to 10 K there are no further phase transitions in NaOH. On the other hand, it is now known that NaOD, orthorhombic at room temperature, monoclinic at high temperature, suffers another transition at 160 K to yet another monoclinic phase.


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