Growth of HfSixOy/ HfO2 Thin Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Techniques

MRS Advances ◽  
2016 ◽  
Vol 1 (4) ◽  
pp. 311-316
Author(s):  
Hiroki Ishizaki
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Si Substrate ◽  
Remote Plasma ◽  
Equivalent Thickness ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Layer Deposition

ABSTRACTIn this paper, we will report on the formation of HfSixOy layer on an HF-last Si(100) substrate by atomic layer deposition from tetrakis(dimethylamido)hafnium (TDMAH) and atomic oxygen generated by a microwave remote plasma. Transmission electron microscopy observations of HfSixOy /Si structures deposited at 100 and 300℃ revealed that 3∼5-nm-thick amorphous HfSixOy layers were unintentionally formed preceded the growth of crystalline Hf-rich HfSixOy layers. To understand the mechanism of this unintentional growth of HfSixOy, the depth profiles of Hf, O and Si elements were measured by X-ray photoelectron spectroscopy. It was found that Hf atoms deeply diffused into the Si substrate. From these results, suppression of Hf in diffusion to the Si substrate must be important to reduce the capacitance equivalent thickness of the metal-oxide-semiconductor capacitors. The roles of TDMAH and plasma-generated oxygen radical on the enhanced diffusion of Hf will be discussed in detail.

Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition

2020 ◽  
Vol 1004 ◽  
pp. 547-553
Author(s):  
A.B. Renz ◽  
Oliver J. Vavasour ◽  
Peter M. Gammon ◽  
Fan Li ◽  
Tian Dai ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Elevated Temperatures ◽  
Dielectric Breakdown ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Gas Treatment ◽  
Time Dependent Dielectric Breakdown ◽  
Layer Deposition ◽  
Order Of Magnitude

A systematic post-deposition annealing study on Silicon Carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) using atomic layer deposition (ALD)-deposited silicon dioxide (SiO2) layers was carried out. Anneals were done in oxidising (N2O), inert (Ar) and reducing (H2:N2) ambients at elevated temperatures from 900°C to 1300°C for 1 hour. Electrical characterisation results show that the forming gas treatment at 1100°C reduces the flatband voltage to 0.23 V from 10 V for as-deposited SiO2 layers. The density of interface traps (DIT) was also reduced by one order of magnitude to 2×1011 cm-2 eV-1 at EC-ET = 0.2 eV. As an indicator of the improvement, characterisation by x-ray photoelectron spectroscopy (XPS) showed that silicon enrichment present in as-deposited layers was largely reduced by the forming gas anneal, improving the stoichiometry. Time-dependent dielectric breakdown (TDDB) results showed that the majority of forming gas annealed samples broke down at breakdown fields of 12.5 MV × cm-1, which is about 2.5 MV × cm-1 higher than for thermally oxidised samples.

Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors

2007 ◽  
Vol 22 (7) ◽  
pp. 1899-1906 ◽  
Author(s):  
Yan-Kai Chiou ◽  
Che-Hao Chang ◽  
Tai-Bor Wu
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Charge Density ◽  
Photoelectron Spectroscopy ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Electrical Performance ◽  
Breakdown Field ◽  
Layer Deposition

The growth of HfO2 thin films on a HF-dipped p-Si(100) substrate at 200 °C by atomic-layer deposition (ALD) using Hf[N(C2H5)(CH3)]4 and H2O vapor as precursors is demonstrated. Uniform HfO2 thin films are obtained on a 4-in. silicon wafer, and the energy-band gap and band offset are determined by x-ray photoelectron spectroscopy analysis. The as-deposited HfO2 thin film is amorphous and able to crystallize at 500 ∼ 600 °C with only the monoclinic phase. As for the electrical performance of Au–Ti–HfO2–Si metal oxide semiconductor capacitors, a dielectric constant of ∼17.8 and an equivalent oxide thickness value of ∼1.39 nm are obtained from the 40-cycle ALD film after annealing at 500 °C. In addition, the breakdown field is in the range of 5 ∼ 5.5 MV/cm, and the fixed charge density is on the order of 1012 cm−2, depending on the annealing temperatures. The interface quality of HfO2 thin films on silicon is satisfactory with an interface-trap charge density of ∼3.7 × 1011 cm−2 eV−1.

Atomic Layer Deposition on Quantities of Multiwalled Carbon Nanotubes

2007 ◽  
Vol 1054 ◽  
Author(s):  
Andrew S. Cavanagh ◽  
Christopher A. Wilson ◽  
Alan W. Weimer ◽  
Steven M. George
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Multiwalled Carbon Nanotubes ◽  
Photoelectron Spectroscopy ◽  
High Surface ◽  
High Surface Area ◽  
Atomic Layer ◽  
Multiwalled Carbon ◽  
Transmission Electron ◽  
Layer Deposition

ABSTRACTAtomic layer deposition (ALD) was performed on quantities of multiwalled carbon nanotubes (MWCNTs) in a rotary reactor. Because of nucleation difficulties, Al2O3 ALD grew as nanospheres on the MWCNTs. After a NO2 nucleation treatment, Al2O3 ALD films grew conformally and noncovalently functionalized the surface of the MWCNT. This Al2O3 ALD film served as a platform for the growth of W ALD metal. The uncoated and ALD-coated MWCNTs were characterized with transmission electron microscopy and x-ray photoelectron spectroscopy. This study demonstrates that ALD can be performed on quantities of very high surface area MWCNT substrates.

Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique

2019 ◽  
Vol 33 (6) ◽  
pp. 227-233 ◽  
Author(s):  
Hiroki Ishizaki ◽  
Masataka Iida ◽  
Yohei Otani ◽  
Yukio Fukuda ◽  
Tetsuya Sato ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Deposition Technique ◽  
Si Substrate ◽  
Remote Plasma ◽  
Al2o3 Film ◽  
Layer Deposition ◽  
Atomic Layer Deposition Technique

Local Electronic Structure and UV Electroluminescence of n-ZnO:N/p-GaN Heterojunction LEDs Grown by Remote Plasma Atomic Layer Deposition

2012 ◽  
Vol 1432 ◽  
Author(s):  
Jui F. Chien ◽  
Ching H. Chen ◽  
Jing J. Shyue ◽  
Miin J. Chen
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Nitrogen Doping ◽  
Hall Effect Measurement ◽  
Atomic Layer ◽  
Remote Plasma ◽  
X Ray ◽  
Layer Deposition ◽  
Local Electronic Structure ◽  
X Ray Absorption

ABSTRACTNitrogen-doped ZnO (ZnO:N) films have been prepared by remote plasma atomic layer deposition (RP-ALD) and treated by rapid thermal annealing (RTA) in oxygen atmosphere. The local electronic structures of the (ZnO:N) films were investigated by X-ray photoelectron spectroscopy (XPS) and X-ray absorption near edge spectroscopy (XANES) at the O K-edge. The XPS reveals the presence of the Zn-N bond in the ZnO:N films, indicating that partial amounts of oxygen sites are occupied by nitrogen species. This is correspondent with the decrease of electron concentration in ZnO:N films with the nitrogen doping concentration, as indicated by the Hall effect measurement. The RP-ALD technique was applied to fabricate the n-type ZnO:N/p-type GaN heterojunction LEDs. Dominant ultraviolet electroluminescence at 371 nm from the ZnO:N layer was observed at room temperature.

scholarly journals Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition

2012 ◽  
Vol 1408 ◽  
Author(s):  
Cagla Ozgit ◽  
Fatma Kayaci ◽  
Inci Donmez ◽  
Engin Cagatay ◽  
Tamer Uyar ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Layer Deposition ◽  
High Resolution Tem ◽  
Uniform Wall

ABSTRACTAl2O3 and AlN nanotubes were fabricated by depositing conformal thin films via atomic layer deposition (ALD) on electrospun nylon 66 (PA66) nanofiber templates. Depositions were carried out at 200°C, using trimethylaluminum (TMAl), water (H2O), and ammonia (NH3) as the aluminum, oxygen, and nitrogen precursors, respectively. Deposition rates of Al2O3 and AlN at this temperature were ∼1.05 and 0.86 Å/cycle. After the depositions, Al2O3- and AlN-coated nanofibers were calcinated at 500°C for 2 h in order to remove organic components. Nanotubes were characterized by using X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). AlN nanotubes were polycrystalline as determined by high resolution TEM (HR-TEM) and selected area electron diffraction (SAED). TEM images of all the samples reported in this study indicated uniform wall thicknesses.

Properties of High-Quality LaAlO3 Film Deposited by In Situ Plasma-Enhanced-Atomic-Layer-Deposition

2013 ◽  
Vol 721 ◽  
pp. 24-28 ◽  
Author(s):  
Duo Cao ◽  
Xin Hong Cheng ◽  
Ting Ting Jia ◽  
Da Wei Xu ◽  
Li Zheng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Valence Band Offset ◽  
Xps Spectra ◽  
Transmission Electron ◽  
Layer Deposition ◽  
Interfacial States ◽  
Current Densities

Plasma enhanced atomic layer deposition (PEALD) method can decrease film growing temperature, and allow in-situ plasma treatment. LaAlO3 films were deposited with PEALD at 180°C. High resolution transmission electron microscopy (HRTEM) results exhibited amorphous microstructure of both films even after rapid thermal annealing (RTA) at 800°C. X-ray photoelectron spectroscopy (XPS) spectra suggested that the valence-band offset between the LaAlO3 film and the substrate was 3.3 eV. The electrical experimental results indicated that the leakage current densities were 0.10mA/cm2 and 0.03mA/cm2 respectively at a gate bias of |Vg-Vfb|=1V and the equivalent oxide thicknesses (EOT) of them were 1.2 nm and 1.4 nm, respectively. The densities of interfacial states were calculated to be 1.70×1012eV-1cm-2 and 1.09×1012eV-1cm-2, respectively.

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