Enhanced tunable properties of Bi1.5MgNb1.5O7 thin films grown on Pt–Si substrates using amorphous TiOx buffer layers

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

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Effect of different buffer layers on the microstructure and dielectric properties of BaTiO3 thin films grown on Si substrates

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2008.10.139 ◽

2009 ◽

Vol 477 (1-2) ◽

pp. 560-564 ◽

Cited By ~ 15

Author(s):

Liang Qiao ◽

Xiaofang Bi

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Buffer Layers ◽

Si Substrates

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YBa2Cu3O7-δ thin films on Si substrates with Y2O3 and (Zr1-xYx)O2 buffer layers. The YBa2Cu3O7-δ-Y2O3 and Y2O3-(Zr1-xYx)O2 interfaces.

Micron and Microscopica Acta ◽

10.1016/0739-6260(92)90107-o ◽

1992 ◽

Vol 23 (1-2) ◽

pp. 139-140

Author(s):

Asgeir Bardal ◽

Markus Zwerger ◽

Oliver Eibl

Keyword(s):

Thin Films ◽

Buffer Layers ◽

Si Substrates

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Ferroelectric Properties of Epitaxial BiFe0.97Mn0.03O3 Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.421-422.111 ◽

2009 ◽

Vol 421-422 ◽

pp. 111-114

Author(s):

Hyun Young Go ◽

Naoki Wakiya ◽

Takanori Kiguchi ◽

Tomohiko Yoshioka ◽

Osamu Sakurai ◽

...

Keyword(s):

Thin Films ◽

Bismuth Ferrite ◽

Ferroelectric Properties ◽

Yttria Stabilized Zirconia ◽

Buffer Layers ◽

Laser Deposition ◽

Stabilized Zirconia ◽

Si Substrates ◽

Crystal Orientations ◽

Mn Doped

We investigated electrical properties of epitaxial Mn doped bismuth ferrite BiFe0.97Mn0.03O3 (BFMO) thin films with different crystal orientations deposited on Si substrates with appropriate buffer layers. Epitaxial SrRuO3 (SRO) thin films with (001), (101), and (111) orientations were grown on CeO2/yttria-stabilized zirconia (YSZ)/Si(001) substrates and YSZ/Si(001), respectively, by the insertion of MgO and TiO2 atomic layers using pulsed-laser deposition (PLD). Using spin coating, we deposited BFMO thin films onto orientated SRO thin films. The BFMO orientation followed the SRO orientation. The Pr values of the BFMO were ordered as follows {111}>{110}>{100}, which is the same as that predicted by crystallographic considerations. The largest Pr value of the {111} orientation is 76 μC/cm2 at 100 kHz, 25°C.

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Ferroelectric Diode Effect with Temperature Stability of Double Perovskite Bi2NiMnO6 Thin Films

Nanomaterials ◽

10.3390/nano9121783 ◽

2019 ◽

Vol 9 (12) ◽

pp. 1783 ◽

Cited By ~ 1

Author(s):

Wen-Min Zhong ◽

Qiu-Xiang Liu ◽

Xin-Gui Tang ◽

Yan-Ping Jiang ◽

Wen-Hua Li ◽

...

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Temperature Stability ◽

Double Perovskite ◽

Chemical State ◽

Buffer Layers ◽

Solution Deposition ◽

Si Substrates ◽

Current Voltage ◽

Diode Behavior

Double perovskite Bi2NiMnO6 (BNMO) thin films grown on p-Si (100) substrates with LaNiO3 (LNO) buffer layers were fabricated using chemical solution deposition. The crystal structure, surface topography, surface chemical state, ferroelectric, and current-voltage characteristics of BNMO thin films were investigated. The results show that the nanocrystalline BNMO thin films on p-Si substrates without and with LNO buffer layer are monoclinic phase, which have antiferroelectric-like properties. The composition and chemical state of BNMO thin films were characterized by X-ray photoelectron spectroscopy. In the whole electrical property testing process, when the BNMO/p-Si heterojunction changed into a BNMO/LNO/p-Si heterojunction, the diode behavior of a single diode changing into two tail to tail diodes was observed. The conduction mechanism and temperature stability were also discussed.

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Characteristics of oxide thin films from carboxylate precursors

Journal of Materials Research ◽

10.1557/jmr.1991.1736 ◽

1991 ◽

Vol 6 (8) ◽

pp. 1736-1743 ◽

Cited By ~ 9

Author(s):

Peir-Yung Chu ◽

Relva C. Buchanan

Keyword(s):

Thin Films ◽

Solvent System ◽

Buffer Layers ◽

Oxide Thin Films ◽

Fine Grained ◽

Si Substrates ◽

Thermal Pyrolysis ◽

Metal Nitrates ◽

Phase Development ◽

Heat Treated

Oxide thin films on Si substrates were prepared from carboxylate precursors by the reaction of the metal nitrates and ammonium trimethylacetate. Precursor salts were characterized with respect to purity, structure, thermal pyrolysis, and phase development during calcination. A solvent system, based on carboxylic acid/amine mixture, was developed to dissolve the synthesized precursors, resulting in increased solubility, viscosity, and stability. Smooth, fine-grained ZrO2, Y2O3, and YSZ films were obtained on Si wafers by spin-coating and subsequent heat treatment above 500 °C. Films heat treated below 700 °C were generally adherent, amorphous, or microcrystalline, while YSZ and ZrO2 showed (111) preferred orientation above 700 °C. These oxide films show promise as protective or buffer layers on Si wafers.

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Enhanced the Dielectric and Tunable Properties of BZNT Thin Films through Adjusting Annealing Process

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.252.211 ◽

2012 ◽

Vol 252 ◽

pp. 211-215

Author(s):

Xiao Hua Sun ◽

Shuang Hou ◽

Zhi Meng Luo ◽

Cai Hua Huang ◽

Zong Zhi Hu

Keyword(s):

Thin Film ◽

Thin Films ◽

Dielectric Constant ◽

Grain Size ◽

Dielectric Loss ◽

Annealing Temperature ◽

Rf Magnetron Sputtering ◽

Annealing Process ◽

Si Substrates ◽

Tunable Properties

Bismuth zinc niobate titanium (Bi1.5Zn0.5 Nb0.5Ti1.5O7) (BZNT) thin films were deposited on PtTiSiO2Si substrates by radio frequency (rf) magnetron sputtering. The microstructure, surface morphology, stress, dielectric and tunable properties of thin films were investigated as a function of initial annealing temperature. It’s found that high initial annealing temperature increases the grain size, dielectric constant and tunability of BZNT films simultaneously and decreases the tensile stress in films. The BZNT thin film annealed from 500 °C to 700 °C shows the highest FOM value of 45.67 with the smallest dielectric loss and upper tunability.

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