Characterization of PbTiO3 thin films deposited on Pt/Ti/SiO2/Si substrates by ECR PECVD

1995 ◽  
Vol 10 (2) ◽  
pp. 447-452 ◽  
Author(s):  
Sung-Woong Chung ◽  
Jung-Shik Shin ◽  
Jae-Whan Kim ◽  
Kwangsoo No ◽  
Sung-Soon Chun ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Process Temperature ◽  
Chemical Compositions ◽  
Si Substrates ◽  
Fine Grain ◽  
Wide Range ◽  
Metal Organic ◽  
Surface Morphologies

The electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) method is used to prepare ferroelectric PbTiO3 films. Single-phase perovskite PbTiO3 films with smooth surfaces and fine grain size were successfully fabricated on Pt/Ti/SiO2/Si substrates at low temperatures of 400–500 °C using metal-organic (MO) sources. The chemical compositions, structural phases, surface morphologies, and depth profiles of the PbTiO3 thin films were investigated using EDS, XRD, SEM, RBS, and AES. Variations of those properties with process temperature and gas supply ratio are discussed. When the process temperature was above 450 °C, the stoichiometric perovskite PbTiO3 films could be obtained even though the MO source supply ratio was varied in a wide range if the oxygen supply was sufficient.

scholarly journals Properties and Orientation of Antiferroelectric Lead Zirconate Thin Films Grown by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
Nan Chen ◽  
G. R. Bai ◽  
O. Auciello ◽  
R. E. Koritala ◽  
M. T. Lanagan
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Lead Zirconate ◽  
Dielectric Constants ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Antiferroelectric Phase ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractSingle-phase polycrystalline PbZrO3 (PZ) thin films, 3000-6000 A thick, have been grown by metal-organic chemical vapor deposition (MOCVD) on (111)Pt/Ti/SiO2/Si substrates at ≍525°C. X-ray diffraction analysis indicated that the PZ films grown on (111)Pt/Ti/SiO2/Si (Pt/Tgi/Si) showed preferred pseudocubic (110) orientation. In contrast, PZ films grown on 150 A thick PbTiO3 (PT) template layers exhibited a pseudocubic (100) preferred orientation, and PZ films deposited on TiO2 template layers consisted of randomly oriented grains. The PZ films grown on Pt/Ti/Si with or without templates exhibited dielectric constants of 120-200 and loss tangents of 0.01-0.0. The PZ films with (110) orientation exhibited an electric-field-inducedtransformation from the antiferroelectric phase to the ferroelectric phase with a polarization of ≍34 µC/cm2, and the energy that was stored during switching was 7.1 J/cm3. The field needed to excite the ferroelectric state and that needed to revert to the antiferroelectric state were 50 and 250 kV/cm, respectively. Relationships between the MOCVD processing and the film microstructure and properties are discussed.

Deposition of Ru Thin Films by MOCVD Using Direct Liquid Injection System

2001 ◽  
Vol 672 ◽  
Author(s):  
Sang Y. Kang ◽  
Cheol S. Hwang ◽  
Hyeong J. Kim
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Injection System ◽  
Organic Chemical ◽  
Si Substrates ◽  
Liquid Injection ◽  
Liquid Source ◽  
Metal Organic ◽  
Direct Liquid Injection

ABSTRACTRu thin films were deposited on SiO2/Si and (Ba,Sr)TiO3 [BST]/Pt/TiO2/SiO2/Si substrates using Ru(C2H5C5H4)2 [Ru(EtCp)2] by metal-organic chemical vapor deposition (MOCVD). To determine the effects of the solvent, C4H8O [tetrahydrofuran: THF], it was injected into the reaction chamber by the Direct Liquid Injection (DLI) system while Ru(EtCp)2 was input through the bubbler system. Also, Ru thin films were deposited using a liquid source, Ru(EtCp)2 dissolved in THF, delivered by the DLI system. The surface of the Ru thin films deposited on the BST substrate using only Ru(EtCp)2 through the bubbler system was very rough and milky, but the addition of THF made the surface of the films smooth and clean. In addition, Ru films deposited at 325°C using Ru(EtCp)2 dissolved in THF through the DLI system have a dense and smooth microstructure with resistivity as low as 15µωcm.

Growth of Zr Substituted Barium Titanate Thin Films from the Vapor Phase

2002 ◽  
Vol 748 ◽  
Author(s):  
R. Ganster ◽  
S. Hoffmann-Eifert ◽  
R. Waser
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Pulse Mode ◽  
Injection System ◽  
Organic Chemical ◽  
Single Element ◽  
Silicon Substrates ◽  
Si Substrates ◽  
Liquid Precursors ◽  
Metal Organic

ABSTRACTWe report on the growth of Ba(Ti1-xZrx)O3 thin films on Pt(111) / TiO2 / SiO2 / Si substrates by means of metal-organic chemical vapor deposition (MOCVD) using liquid precursors. The MOCVD system consists of an AIXTRON AIX-200 horizontal reactor with a TriJet® vaporizer. In the multi-source injection system the different single element precursor solutions were introduced separately in a pulse mode. The focus of our investigations lies on the correlation between processing conditions, growth rate, and film properties, namely stoichiometry, crystal structure, and surface morphology. Dense, polycrystalline Ba(Ti0.63Zr0.37)O3 films were successfully grown on platinum coated silicon substrates at temperatures around 630°C.

Characterization of Pb(ScTa)1−xTixO3 (x<0.3) Thin Films Grown on LaNiO3 Coated Si by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
C. H. Lin ◽  
H. C. Kuo ◽  
G. E. Stillman ◽  
Haydn Chen
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Organic

AbstractHighly (100) textured pseudo-cubic Pb(ScTa)1−xTixO3 (x=0-0.3) (PSTT) thin films were grown by metal-organic chemical vapor deposition (MOCVD) on LaNiO3 (LNO) electrode buffered Si substrates at 650 °C. The microstructure and chemical uniformity were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and nanoprobe X-ray energy dispersive spectroscopy (EDS). The temperature dependence of dielectric properties and P-E behavior were measured. A shift of Curie temperature of these PST-based thin films due to Ti addition was demonstrated, Furthermore, the pyroelectric properties of these thin films were estimated.

Route from ZnO Thin Films to Nanostructures on Si Substrates by Metal Organic Chemical Vapor Deposition

2007 ◽  
Vol 51 (96) ◽  
pp. 207 ◽  
Author(s):  
Sang-Woo KIM ◽  
Han-Ki KIM ◽  
Soon-Wook JEONG ◽  
Shizuo FUJITA ◽  
Kyoung-Kook KIM
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Zno Thin Films ◽  
Organic Chemical ◽  
Si Substrates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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