Al Doped Ta2O5 Thin Films for Microelectronic Applications

2000 ◽  
Vol 654 ◽  
Author(s):  
P. C Joshi ◽  
M. W. Cole ◽  
C. W. Hubbard ◽  
E. Ngo
Keyword(s):  
Thin Films ◽  
Precursor Solution ◽  
Electrical Measurements ◽  
Cross Sectional ◽  
Solution Deposition ◽  
Atomic Force ◽  
The Stability ◽  
Insulating Properties ◽  
Post Deposition

AbstractIn this paper, we report on the fabrication and characterization of pure and Al doped Ta2O5 thin films fabricated by metalorganic solution deposition (MOSD) technique. The pure and Aldoped Ta2O5 thin films were fabricated by spin-coating technique using room temperature processed carboxylate-alkoxide precursor solution. The structure of the films was analyzed by xray diffraction (XRD). The surface and cross-sectional morphology of the films were examined by field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The electrical measurements were conducted on films in MIM configuration using Pt as the top and bottom electrode. The effects of Al concentration and the post-deposition annealing temperature on the structural, dielectric, and insulating properties were analyzed. The effects of the applied bias and the measurement temperature on the dielectric and insulating properties were also analyzed to establish the stability and reliability of Al doped Ta2O5 thin films.

The Influence of Precursor on the Microstructure and Characterization for Sr0.5Ba0.5Bi4Ti4O15 Thin Films

2007 ◽  
Vol 336-338 ◽  
pp. 136-139
Author(s):  
Dan Xie ◽  
Wei Pan ◽  
Tian Ling Ren ◽  
Li Tian Liu ◽  
Zhi Min Dang
Keyword(s):  
Thin Films ◽  
Ph Value ◽  
Sol Gel ◽  
Precursor Solution ◽  
Layered Perovskite ◽  
Layered Perovskite Structure ◽  
Gel Technique ◽  
The Stability

The uniform Sr0.5Ba0.5Bi4Ti4O15 thin films were prepared using a modified Sol-Gel technique and the influence of precursor on the microstructure and characterization of thin films were studied. The stability and uniformity of precursor solution is key issue for the quality of thin films. Ethanolamine is an effective complexation reagent of Bi3+, which could moderate the acidity of precursor. When pH value and concentration of precursor solution was about 3.5 and 0.35M respectively, the smooth and uniform Sr0.5Ba0.5Bi4Ti4O15 thin films could be obtained. The Bi-layered perovskite structure of Sr0.5Ba0.5Bi4Ti4O15 formed at 750°C. The morphology of the grains in Sr0.5Ba0.5Bi4Ti4O15 thin films was elliptoid and the grain size was about 90 ~ 100 nm.

Microstructural and Electrical Properties of La Doped Ba1划xSrxTiO3 Thin Films For Tunable Microwave Device Applications

2000 ◽  
Vol 655 ◽  
Author(s):  
M.W. Cole ◽  
P.C. Joshi ◽  
E. Ngo ◽  
C.W. Hubbard ◽  
U. Lee ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Electrical Measurements ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Insulator Metal ◽  
Device Applications ◽  
Bst Films ◽  
La Doped

AbstractWe have investigated the structural, compositional, interfacial, surface morphological and dielectric properties of Ba0.6Sr0.4TiO3 solid solution thin films La doped from 0 to 10 mol%. The doped thin films were prepared by the metalorganic solution deposition technique using carboxylate-alkoxide precursors. After post-deposition annealing in oxygen ambient at 750 °C the films were characterized via x-ray diffraction, Auger electron microscopy, field emission scanning electron microscopy, and atomic force microscopy. The electrical measurements were achieved in the metal-insulator-metal (MIM) configuration with Pt as the top and bottom electrode. Our results demonstrated that La doping had a strong effect on the films microstructural, dielectric and insulating properties. Specifically, 1 mol% La doped BST films exhibited a lower dielectric constant, 283 and higher resistivity 31.4×1013 W-cm with respect to that of undoped BST. The loss tangent and tunability (at 100 kHz) of the 1 mol% La doped BST films were 0.019 and 21% (at E=300kV/cm) respectively.

A Structural Study of SrBi2Ta2O9 - Bi3TiNbO9 Ferroelectric Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
P. S. Dobalt ◽  
R. S. Katiyart ◽  
S. Tirumala ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Metal Organic

AbstractThin films of ferroelectric (SrBi2Ta2O9)x(Bi3TiNbO9)1-x layered structure (for x = 0.0, 0.2, … 1.0) were prepared by a metal organic solution deposition method on Pt/TiO2/SiO2/Si substrates. Raman spectroscopy, X-ray diffraction, atomic force microscopy (AFM), and electrical characterization techniques were utilized to study the inclusion of SrBi2Ta2O9 (SBT) in the Bi3TiNbO9 (BTN) system. The Raman spectra show frequency shifts and broadening of modes as x increases from 0.0 to 0.4, which are related to the nature of Sr and Bi in the A-sites, and Ta, Ti, and Nb in the B-sites. Smooth surfaces without any cracks or defects were evidenced in each of these films by AFM. These images also indicate that the grain size in the films increases with increasing SBT content in the BTN compound. Electrical measurements show that the remanent polarization (Pr) and the coercive field (Ec) values in the x=0.0 film (2 μC/cm2 and 30 kV/cm, respectively) increase to 12.5 μC/cm2 and 125 kV/cm for x=0.6. A decrease in these parameters was found for higher compositions.

PREPARATION AND ELECTRICAL PROPERTIES OF LEAD-FREE Bi0.5(Na0.4K0.6)0.5TiO3 THIN FILMS

2005 ◽  
Vol 12 (03) ◽  
pp. 409-412 ◽  
Author(s):  
CHANGHONG YANG ◽  
ZHUO WANG ◽  
GUANGPENG MA ◽  
SHENGLI GU ◽  
YUGUO YANG ◽  
...  
Keyword(s):  
Structural Characteristics ◽  
Precursor Solution ◽  
Lead Free ◽  
Hysteresis Curve ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Chemical Solution Deposition Method ◽  
Atomic Force ◽  
Insulating Properties

Lead-free Bi 0.5( Na 0.4 K 0.6)0.5 TiO 3 films have been synthesized by a chemical solution deposition method and deposited on p-Si (111) substrate by spin coating. Powder of the precursor solution heated at 650°C was studied by infrared scattering spectroscopy. The structural characteristics and crystallization of the films were examined by X-ray diffraction. The surface morphology and quality were studied using atomic force microscopy. The films exhibit good insulating properties and resistance to breakdown. The clockwise hysteresis curve is referred to as polarization type switching and the memory window is about 1.5 V.

Characterization of the order-annealing response of nanostructured iron-palladium based ferromagnetic thin-films

2001 ◽  
Vol 703 ◽  
Author(s):  
Huiping Xu ◽  
Adam T. Wise ◽  
Timothy J. Klemmer ◽  
Jörg M. K. Wiezorek
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Room Temperature ◽  
Si Substrate ◽  
Ferromagnetic Thin Films ◽  
Precipitation Reactions ◽  
Post Deposition ◽  
Xrd And Tem ◽  
Iron Palladium

ABSTRACTA combination of XRD and TEM techniques have been used to characterize the response of room temperature magnetron sputtered Fe-Pd thin films on Si-susbtrates to post-deposition order-annealing at temperatures between 400-500°C. Deposition produced the disordered Fe-Pd phase with (111)-twinned grains approximately 18nm in size. Ordering occurred for annealing at 450°C and 500°C after 1.8ks, accompanied by grain growth (40-70nm). The ordered FePd grains contained (111)-twins rather than {101}-twins typical of bulk ordered FePd. The metallic overlayers and underlayers selected here produced detrimental dissolution (Pt into Fe-Pd phases) and precipitation reactions between Pd and the Si substrate.

Preparation and characterization of Bi2Ti2O7 thin films by chemical solution deposition technique

2000 ◽  
Vol 370 (1-2) ◽  
pp. 30-32 ◽  
Author(s):  
XianMing Wu ◽  
Sh.W. Wang ◽  
H. Wang ◽  
Z. Wang ◽  
S.X. Shang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Deposition Technique ◽  
Solution Deposition

Effect of Precursor Sol Ageing on Sol-Gel Derived Ruthenium Oxide Thin Films

1999 ◽  
Vol 606 ◽  
Author(s):  
S. Bhaskar ◽  
S. B. Majumder ◽  
P. S. Dobal ◽  
R. S. Katiyar ◽  
A. L. M. Cruz ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Ruthenium Oxide ◽  
Precursor Solution ◽  
Silicon Substrates ◽  
Solution Deposition ◽  
Precursor Material ◽  
Afm Analysis

AbstractIn the present work we have optimized the process parameters to yield homogeneous, smooth ruthenium oxide (RuO2) thin films on silicon substrates by a solution deposition technique using RuCl3.×.H2O as the precursor material. Films were annealed in a temperature range of 300°C to 700°C, and it was found that RuO2 crystallizes at a temperature as low as 400°C. The crystallinity of the films improves with increased annealing temperature and the resistivity decreases from 4.86µΩ-m (films annealed at 400°C) to 2.94pµΩ (films annealed at 700°C). Ageing of the precursor solution has a pronounced effect on the measured resistivities of RuO2 thin films. It was found that the measured room temperature resistivities increases from 2.94µΩ-m to 45.7µΩ-m when the precursor sol is aged for aged 60 days. AFM analysis on the aged films shows that the grain size and the surface roughness of the annealed films increase with the ageing of the precursor solution. From XPS analysis we have detected the presence of non-transformed RuCl3 in case of films prepared from aged solution. We propose, that solution ageing inhibits the transformation of RuCl3 to RuO2 during the annealing of the films. The deterioration of the conductivity with solution ageing is thought to be related with the chloride contamination in the annealed films.

scholarly journals Characterization of Sputtered Shape Memory Alloy Ni-Ti Films by Cross-sectional TEM and SEM

2008 ◽  
Vol 14 (S3) ◽  
pp. 85-86
Author(s):  
R.M.S. Martins ◽  
A. Mücklich ◽  
N. Schell ◽  
R.J.C. Silva ◽  
K.K. Mahesh ◽  
...  
Keyword(s):  
Thin Films ◽  
Shape Memory ◽  
Smart Materials ◽  
Functionally Graded ◽  
Sensors And Actuators ◽  
Successful Development ◽  
Cross Sectional ◽  
Mechanical Devices ◽  
Ti Films

Ni-Ti Shape Memory Alloys (SMAs) have been attracting attention as smart materials because they can work as sensors and actuators at the same time. Miniaturization of mechanical devices is evolving toward sub-micron dimensions raising important questions in the properties of Ni-Ti films. In thin films it is essential to investigate the microstructure to understand the origin of the thickness limit. The design of functionally graded films has also been considered but for their successful development it is important to characterize the variations in crystalline structure.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

scholarly journals The Physicochemical and Antibacterial Properties of Chitosan-Based Materials Modified with Phenolic Acids Irradiated by UVC Light

2021 ◽  
Vol 22 (12) ◽  
pp. 6472
Author(s):  
Beata Kaczmarek-Szczepańska ◽  
Marcin Wekwejt ◽  
Olha Mazur ◽  
Lidia Zasada ◽  
Anna Pałubicka ◽  
...  
Keyword(s):  
Thin Films ◽  
Antimicrobial Activity ◽  
Ferulic Acid ◽  
Phenolic Acid ◽  
Food Packaging ◽  
Antibacterial Properties ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

This paper concerns the physicochemical properties of chitosan/phenolic acid thin films irradiated by ultraviolet radiation with wavelengths between 200 and 290 nm (UVC) light. We investigated the preparation and characterization of thin films based on chitosan (CTS) with tannic (TA), caffeic (CA) and ferulic acid (FA) addition as potential food-packaging materials. Such materials were then exposed to the UVC light (254 nm) for 1 and 2 h to perform the sterilization process. Different properties of thin films before and after irradiation were determined by various methods such as Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM), differential scanning calorimeter (DSC), mechanical properties and by the surface free energy determination. Moreover, the antimicrobial activity of the films and their potential to reduce the risk of contamination was assessed. The results showed that the phenolic acid improving properties of chitosan-based films, short UVC radiation may be used as sterilization method for those films, and also that the addition of ferulic acid obtains effective antimicrobial activity, which have great benefit for food packing applications.

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