Cross-sectional observation on the indentation of [001] silicon

1999 ◽  
Vol 14 (6) ◽  
pp. 2399-2401 ◽  
Author(s):  
Y. Q. Wu ◽  
G. Y. Shi ◽  
Y. B. Xu
Keyword(s):  
Electron Microscope ◽  
Ambient Temperature ◽  
Amorphous Silicon ◽  
Transmission Electron Microscope ◽  
Indentation Depth ◽  
Hydrostatic Stress ◽  
Surface Shape ◽  
Vickers Indentation ◽  
Cross Sectional ◽  
Transmission Electron

A transmission electron microscope (TEM) micrograph of cross-sectionally viewed Vickers indentation made on the surface of (001) silicon at ambient temperature was obtained. The picture clearly reveals a triangle area, pointing downward and having nondiffraction-contrast, left after unloading, which further confirms the amorphized range induced by indentation in silicon. Analysis of the picture directly manifests a significant recovery of indentation depth. Surface shape and range of the amorphous silicon region do not coincide with that of the indenter and the corresponding distribution pattern of hydrostatic stress beneath indentation predicted by elastoplastic theory, respectively. It seems that the amorphization could not be attributed to the result of hydrostatic stress alone.

scholarly journals Ion-Irradiation-Induced Amorphization Of Cadmium Niobate Pyrochlore

2000 ◽  
Vol 650 ◽  
Author(s):  
A. Meldrum ◽  
K. Beaty ◽  
L. A. Boatner ◽  
C. W. White
Keyword(s):  
Electron Microscope ◽  
Ambient Temperature ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Ex Situ ◽  
Temperature Dependent ◽  
Transmission Electron ◽  
Ion Energies

ABSTRACTIrradiation-induced amorphization of Cd2Nb2O7 pyrochlore was investigated by means of in-situ temperature-dependent ion-irradiation experiments in a transmission electron microscope, combined with ex-situ ion-implantation (at ambient temperature) and RBS/channeling analysis. The in-situ experiments were performed using Ne or Xe ions with energies of 280 and 1200 keV, respectively. For the bulk implantation experiments, the incident ion energies were 70 keV (Ne+) and 320 keV (Xe2+). The critical amorphization temperature for Cd2Nb2O7 is ∼480 K (280 keV Ne+) or ∼620 K (1200 keV Xe2+). The dose for in-situ amorphization at room temperature is 0.22 dpa for Xe2+, but is 0.65 dpa for Ne+ irradiation. Both types of experiments suggest a cascade overlap mechanism of amorphization. The results were analyzed in light of available models for the crystalline-to-amorphous transformation and were compared to previous ionirradiation experiments on other pyrochlore compositions.

Cross-sectional Transmission Electron Microscope Studies on Intrinsic Breakdown Spots of Thin Gate Oxides

1997 ◽  
Vol 36 (Part 1, No. 5A) ◽  
pp. 2561-2564 ◽  
Author(s):  
Satoshi Ikeda ◽  
Masao Okihara ◽  
Hidetsugu Uchida ◽  
Norio Hirashita
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Cross Sectional ◽  
Gate Oxides ◽  
Transmission Electron

Si1-XGeX Selective Etchant for Gate-All-Around Transistors

2021 ◽  
Vol 314 ◽  
pp. 71-76
Author(s):  
Ken Harada ◽  
Tatsunobu Suzuki ◽  
Tomohiro Kusano ◽  
Kan Takeshita ◽  
Yusuke Oniki ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Selective Etching ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Etch Rates

3 formulated etchants were prepared and their etch rates were measured using blanket wafers in order to confirm that the etching reactions on Si1-XGeX and Si are controllable. Si1-XGeX selective etching with those formulations was also verified using the wafers which had Si1-XGeX and Si multi-stacked structures. Cross-sectional transmission electron microscope (TEM) images suggested that the formulations were usable for Si1-XGeX selective etching processes.

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