Influence of Substrates on the Crystal Structure of Pulsed Laser Deposited Pb(Mg1/3Nb2/3)O3–29% PbTiO3 Thin Films

2002 ◽  
Vol 17 (5) ◽  
pp. 1030-1034 ◽  
Author(s):  
Jung-Kun Lee ◽  
Hyun-Suk Jung ◽  
Dong-Wan Kim ◽  
Chang-Hoon Kim ◽  
Kug Sun Hong
Keyword(s):  
Thin Films ◽  
Interfacial Layer ◽  
Pyrochlore Phase ◽  
Pulsed Laser ◽  
Phase Evolution ◽  
Si Substrate ◽  
Oxide Electrodes ◽  
Scanning Auger Microprobe ◽  
Oxide Substrates ◽  
Evolution Behavior

Lead magnesium niobate–lead titanate [Pb(Mg1/3Nb2/3)O3 (PMN)–PbTiO3 (PT)] films were synthesized using pulsed laser deposition, and the effect of substrates on the deposition behavior of the PMN–PT film was investigated. Phase evolution of PMN–PT thin films was found to depend significantly on the type of the substrate used during deposition. Though a mixture of pyrochlore and perovskite was observed when films were deposited on a Pt/TiO2/SiO2/Si substrate, the oxide substrates, such as (Ba0.5Sr0.5)RuO3/Si, SrTiO3, and LaAlO3, enabled the deposition of pure perovskite. Scanning Auger microprobe, transmission electron microscope, and x-ray diffraction analysis showed that an interfacial layer between the substrates and the oxide film was central to the phase evolution behavior. On the Pt/TiO2/SiO2/Si substrate, an interfacial layer of lead–platinum (Pb–Pt) played a major role in the formation of the pyrochlore phase. However, on oxide substrates, there was no interfacial layer and interdiffusion of A-site cations was observed between the PMN film and the oxide electrodes.

Studies of Nanomechanical Properties of Pulsed Laser Deposited NbN films on Si Using Nanoindentation

2012 ◽  
Vol 1424 ◽  
Author(s):  
M. A. Mamun ◽  
A. H. Farha ◽  
Y. Ufuktepe ◽  
H. E. Elsayed-Ali ◽  
A. A. Elmustafa
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Niobium Nitride ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wide Range ◽  
Pile Up ◽  
Average Modulus

ABSTRACTNanomechanical and structural properties of pulsed laser deposited niobium nitride thin films were investigated using X-ray diffraction, atomic force microscopy, and nanoindentation. NbN film reveals cubic δ-NbN structure with the corresponding diffraction peaks from the (111), (200), and (220) planes. The NbN thin films depict highly granular structure, with a wide range of grain sizes that range from 15-40 nm with an average surface roughness of 6 nm. The average modulus of the film is 420±60 GPa, whereas for the substrate the average modulus is 180 GPa, which is considered higher than the average modulus for Si reported in the literature due to pile-up. The hardness of the film increases from an average of 12 GPa for deep indents (Si substrate) measured using XP CSM and load control (LC) modes to an average of 25 GPa measured using the DCM II head in CSM and LC modules. The average hardness of the Si substrate is 12 GPa.

Ferromagnetic epitaxial Cr2O3 thin films grown on oxide substrates by Pulsed Laser Deposition

2020 ◽  
Vol 534 ◽  
pp. 147638
Author(s):  
María Vila ◽  
Juan Rubio-Zuazo ◽  
Irene Lucas ◽  
César Magén ◽  
Alicia Prados ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Substrates

scholarly journals The Effect of Strontium Doping on LaFeO3 Thin Films Deposited by the PLD Method

Catalysts ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 954
Author(s):  
Anna Cyza ◽  
Łukasz Cieniek ◽  
Tomasz Moskalewicz ◽  
Wojciech Maziarz ◽  
Jan Kusiński ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Catalytic Properties ◽  
Pulsed Laser ◽  
Grain Morphology ◽  
Laser Deposition ◽  
Si Substrate ◽  
Tem Analysis ◽  
Small Grains

The aim of the presented investigations was to deposit the thin films La1−xSrxFeO3 (x = 0, 0.1, 0.2) on (100) Si substrate by using the Pulsed Laser Deposition (PLD) method. Structure was exanimated by using XRD, SEM, AFM, TEM and XPS methods. The catalytic properties were analyzed in 4 ppm acetone atmosphere. The doping of Sr thin films La1−xSrxFeO3 (x = 0, 0.1, 0.2) resulted in a decrease in the size of the crystallites, the volume of the elemental cell and change in the grain morphology. In the LaFeO3 and La0.9Sr0.1FeO3, clusters around which small grains grow are visible in the structure, while in the layer La0.8Sr0.2FeO3, the visible grains are elongated. The TEM analysis has shown that the obtained thin films had a thickness in the range 150–170 nm with triangular or flat column ends. The experiment performed in the presence of gases allowed us to conclude that the surfaces (101/020) in the triangle-shaped columns and the plane (121/200) faces in flat columns were exposed to gases. The best properties in the presence of CH3COCH3 gas were noted for LaFeO3 thin film with triangle columns ending with orientation (101/020).

Influence of stress on structural and dielectric anomaly of Bi2(Zn1/3Ta2/3)207 thin films

2005 ◽  
Vol 875 ◽  
Author(s):  
Jun Hong Noh ◽  
Hee Bum Hong ◽  
Kug Sun Hong
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Interfacial Layer ◽  
Monoclinic Phase ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Dielectric Anomaly ◽  
Laser Deposition ◽  
Cubic Phase ◽  
Si Substrates

AbstractBi2(Zn1/3Ta2/3)2O7 (BZT) thin films were grown on the (111) oriented Pt/TiOx/SiO2/Si substrates using a pulsed laser deposition (PLD) technique. BZT thin films deposited at an oxygen partial pressure of 400 mTorr have the non-stoichiometric anomalous cubic phase despite the BZT target was the monoclinic phase. Compositions, the lattice mismatch, the interfacial layer and the residual stress in the film were investigated as the factors which may affect the formation of the anomalous cubic phase. Among them, the coherent interfacial layer which formed at high oxygen pressures resulted in the formation of the cubic phase by reducing the internal stress.

scholarly journals Superconducting properties of very high quality NbN thin films grown by pulsed laser deposition

2019 ◽  
Vol 70 (7) ◽  
pp. 89-94
Author(s):  
Serhii Volkov ◽  
Maros Gregor ◽  
Tomas Roch ◽  
Leonid Satrapinskyy ◽  
Branislav Grančič ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Superconducting Transition Temperature ◽  
Pulsed Laser ◽  
Domain Size ◽  
Superconducting Transition ◽  
Superconducting Properties ◽  
Si Substrate ◽  
Coherent Domain Size ◽  
Coherent Domain

Abstract In this work, we study the effect of the various substrates on the growth and superconducting properties of NbN thin films grown by using pulsed laser ablation in a N2 + 1%H2 atmosphere on MgO, Al2O3 and Si substrates. Structural and superconducting analyses of the films demonstrate that using MgO and Al2O3 substrates can significantly improve the film properties compared to Si substrate. The X-ray diffraction data indicate that MgO and Al2O3 substrates produce highly oriented superconducting NbN films with large coherent domain size in the out-of plane direction on the order of layer thickness and with a superconducting transition temperature of 13.1 K and 15.2 K, respectively. On the other hand, the NbN film grown on the Si substrate exhibits random polycrystalline orientation. Together with the smallest coherent domain size it leads to the lower critical temperature of 8.3 K. Finally, by using a passivation surface layer we are able to improve superconducting properties of NbN thin film and we observe superconducting transition temperature 16.6 K, the one of the highest value reported so far for 50 nm thick NbN film on sapphire.

Sign in / Sign up

Export Citation Format

Share Document