Crystallization Kinetics of Sol-gel-derived (1x)SrBi2Ta2O9–xBi3TiTaO9 Ferroelectric Thin Films

2002 ◽  
Vol 17 (6) ◽  
pp. 1463-1468 ◽  
Author(s):  
Woo-Chul Kwak ◽  
Yun-Mo Sung
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Crystallization Kinetics ◽  
Sol Gel ◽  
Avrami Exponent ◽  
X Ray Diffraction ◽  
X Ray ◽  
Isothermal Kinetic Analysis ◽  
Isothermal Kinetic ◽  
Kinetics Of

The crystallization kinetics of Sr0.7Bi2.3Ta2O9 (SBT) and 0.7SrBi2Ta2O9–0.3Bi3TiTaO9 (SBT-BTT) thin films formed by the sol-gel and spin coating techniques were studied. Phase formation and crystal growth are greatly affected by the film composition and crystallization temperature. Isothermal kinetic analysis was performed on the x-ray diffraction results of the thin films heated in the range of 730 to 760 °C at 10 °C intervals. Activation energy and Avrami exponent values were determined for the fluorite-to-Aurivillus phase transformation. A reduction of approximately 51 kJ/mol in activation energy was observed for the SBT-BTT thin films, and an Avrami exponent value of approximately 1.0 was obtained for both the SBT and SBT-BTT. A comparison is made, and the possible crystallization mechanism is discussed.

Crystallization Kinetics of Seeded SBT ( Sr0.7Bi2.4Ta2O9 ) Powders from Sol-Gel Derived Precursors

2001 ◽  
Vol 688 ◽  
Author(s):  
Gopinathan M. A. Kumar ◽  
Woo-Chul Kwak ◽  
Se-Yon Jung ◽  
Seung-Joon Hwang ◽  
Yun-Mo Sung
Keyword(s):  
Activation Energy ◽  
Kinetic Analysis ◽  
Crystallization Kinetics ◽  
Sol Gel ◽  
Metal Alkoxides ◽  
Aurivillius Phase ◽  
Strontium Bismuth Tantalate ◽  
Isothermal Kinetic Analysis ◽  
Isothermal Kinetic ◽  
Kinetics Of

AbstractStrontium bismuth tantalate (SBT) having composition of Sr0.7Bi2.4Ta2O9 has been prepared through sol-gel method using their corresponding metal alkoxides as precursors. Seeded SBT powder was prepared by the addition of 5 wt.% of nanometer sized SBT particles to the sol followed by pyrolysis. By applying non-isothermal kinetic analysis to the DTA results, activation energy values for the unseeded and seeded samples were determined. Enhanced crystallization kinetics was observed for the seeded one and the activation energy for the aurivillius phase formation was found to be 318 kJ/mol, while 375 kJ/mol for the unseeded. The Avrami exponent values for the seeded and unseeded were found to be 2.80 and 0.96 respectively.

Phase Formation Kinetics in Sol-Gel Derived Strontium Bismith Tantalate

2001 ◽  
Vol 666 ◽  
Author(s):  
Yun-Mo Sung ◽  
Woo-Chul Kwack
Keyword(s):  
Activation Energy ◽  
Thermal Analysis ◽  
Phase Formation ◽  
Sol Gel ◽  
Avrami Exponent ◽  
Fluorite Phase ◽  
X Ray Diffraction ◽  
Aurivillius Phases ◽  
Formation Kinetics ◽  
Isothermal Kinetic

ABSTRACTPhase formation characteristics of Sr0.7Bi2.4Ta2O9 (SBT) powder, synthesized via sol-gel and pyrolysis process, was investigated by using thermal analysis. Each of the two exotherms, appearing in differential thermal analysis (DTA) scan curves, was identified as crystallization of fluorite phase and transformation of fluorite to aurivillius phase, respectively by using x-ray diffraction (XRD). By applying non-isothermal kinetic analyses to the DTA results, activation energy values for the formation of fluorite and aurivillius phases were determined as 192 and 375 kJ/mol, respectively and Avrami exponent values for each reaction were determined as 0.91 and 0.96, respectively. These activation energy and Avrami exponent values were discussed in detail to understand phase formation mechanism in SBT system.

Enhancement of Aurivillius Phase Formation Kinetics in SBT Thin Films using Nanoparticle Seeding

2003 ◽  
Vol 784 ◽  
Author(s):  
Yun-Mo Sung ◽  
Woo-Chul Kwak ◽  
Se-Yon Jung ◽  
Seung-Joon Hwang
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Phase Transformation ◽  
Phase Formation ◽  
X Ray Diffraction ◽  
Aurivillius Phase ◽  
X Ray ◽  
Si Substrates ◽  
Formation Kinetics ◽  
Kinetics Of

ABSTRACTPt/Ti/SiO2/Si substrates seeded by SBT nanoparticles (∼60–80 nm) were used to enhance the phase formation kinetics of Sr0.7Bi2.4Ta2O9 (SBT) thin films. The volume fractions of Aurivillius phase formation obtained through quantitative x-ray diffraction (Q-XRD) analyses showed highly enhanced kinetics in seeded SBT thin films. The Avrami exponents were determined as ∼1.4 and ∼0.9 for unseeded and seeded SBT films, respectively, which reveals different nucleation modes. By using Arrhenius–type plots the activation energy values for the phase transformation of unseeded and seeded SBT thin films were determined to be ∼264 and ∼168 kJ/mol, respectively. This gives a key reason to the enhanced kinetics in seeded films. Microstructural analyses on unseeded SBT thin films showed formation of randomly oriented needle-like crystals, while those on seeded ones showed formation of domains comprised of directionally grown worm-like crystals.

scholarly journals Crystallization kinetics of K2O·TiO2·3GeO2 glass studied by DTA

2008 ◽  
Vol 40 (3) ◽  
pp. 333-338 ◽  
Author(s):  
S. Grujic ◽  
N. Blagojevic ◽  
M. Tosic ◽  
V. Zivanovic ◽  
J. Nikolic
Keyword(s):  
Activation Energy ◽  
Thermal Analysis ◽  
Particle Size ◽  
Differential Thermal Analysis ◽  
Crystallization Kinetics ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
X Ray ◽  
Powder Samples ◽  
Kinetics Of

Crystallization kinetics of K2O?TiO2?3GeO2 glass was investigated by differential thermal analysis (DTA). Experiments were performed on powder samples with a particle size < 0.037 mm. The glass samples were heated at different rates in the temperature range 20-750?C. The kinetic parameters, activation energy for the crystallization process, Ec and Avrami exponent, n were calculated. Powder X-ray diffraction analysis (XRD) of crystallized glass reveals the presence of crystalline K2O?TiO2?3GeO2 indicating polymorphic crystallization with interface controlled crystal growth.

Kinetic mechanisms for mullite formation from sol-gel precursors

1990 ◽  
Vol 5 (9) ◽  
pp. 1963-1969 ◽  
Author(s):  
Dong X. Li ◽  
William J. Thomson
Keyword(s):  
Activation Energy ◽  
Reaction Kinetics ◽  
Single Phase ◽  
Sol Gel ◽  
Mullite Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffusion Controlled ◽  
Kinetic Mechanisms ◽  
Kinetics Of

The reaction kinetics for the formation of mullite (3Al2O3 · 2SiO2) from sol-gel derived precursors were studied using dynamic x-ray diffraction (DXRD) and differential thermal analysis (DTA). The reaction kinetics of diphasic and single phase gels are compared and different reaction mechanisms are found for each gel. Mullite formation in the diphasic gel exhibits an Avrami type, diffusion-controlled growth mechanism with initial mullite formation temperatures of about 1250 °C and an activation energy on the order 103 kJ/mole. On the other hand, mullite formation from the single phase gel is a nucleation-controlled process with an initial formation temperature of 940 °C and a much lower activation energy of about 300 kJ/mole.

Crystallization Kinetics of MgO–Al2O3–SiO2 Transparent Glass–Ceramics

2012 ◽  
Vol 509 ◽  
pp. 230-234 ◽  
Author(s):  
Jin Shu Cheng ◽  
Jing Wang ◽  
Li Ying Tang ◽  
Zhen Lu Deng
Keyword(s):  
Activation Energy ◽  
Crystallization Kinetics ◽  
Glass Ceramics ◽  
Crystal Phase ◽  
Spinel Crystal ◽  
X Ray Diffraction ◽  
Isothermal Crystallization Kinetics ◽  
X Ray ◽  
Spinel Mgal2o4 ◽  
Kinetics Of

The non-isothermal crystallization kinetics of the MgO–Al2O3–SiO2 (MAS) glasses were analyzed with the Kissinger equation and the Augis-Bennett equation by differential scanning calorimeter (DSC) and X-ray diffraction (XRD). The results showed that two crystal phases of spinel (MgAl2O4) and SiO2 were generated sequentially in the heat treatment process. When the spinel was the only crystal phase, the MAS glass-ceramic was transparent. For glass A (containing one type alkali metal Na2O), the corresponding activation energy was Ep1(A)=325.27kJ/mol, Ep2(A)=364.99kJ/mol; for glass B (containing Na2O and K2O) , the activation energy is Ep1(B)=233.79kJ/mol, Ep2(B)=273.85kJ /mol. The average crystallization index for spinel crystal phase was nA1=1.99, nB1=2.58, By adding K+, which suggested that the spinel crystal phase precipitation have the trend to change from two-dimensional pattern to bulk crystallization.

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Sol-Gel derived Bi4-xNdxTi3O12 Thin Films and Their Characterization

2002 ◽  
Vol 737 ◽  
Author(s):  
R.E. Melgarejo ◽  
M.S. Tomar ◽  
A. Hidalgo ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Bismuth Titanate ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Complete Solid Solution ◽  
Sol Gel Process ◽  
Ferroelectric Memory ◽  
Initial Results

ABSTRACTNd substituted bismuth titanate Bi4-xNdxTi3O12 were synthesized by sol-gel process and thin films were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. Thin films, characterized by X-ray diffraction and Raman spectroscopy, shows complete solid solution up to the composition x < 1. Initial results indicate that the ferroelectric polarization increases with increasing Nd content in the film with 2Pr = 50μC/cm2 for x = 0.46, which may have application in non-volatile ferroelectric memory devices.

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

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