Epitaxial Growth of Yb2O3 Buffer Layers on Biaxially Textured-Ni (100) Substrates by Sol-Gel Process
AbstractIn order to develop an alternative buffer layer architecture using the sol-gel process to produce YBCO (YBa2Cu3O7-δ) coated conductors, Yb2O3 has been chosen as the candidate material. Buffer layers of Yb2O3 were epitaxially grown on biaxially textured-Ni (100) substrates by the sol gel process for the first time. The Yb2O3 precursor solution was prepared from an alkoxide sol-gel route in 2-methoxyethanol and was deposited on textured-Ni (100) substrates by either spin coating or dip coating methods. The amorphous film was then processed at 1160°C under flowing (96%)Ar/H2(4%) gas mixture for one hour. The Yb2O3 film exhibited a strong c-axis orientation on the Ni (100) substrates. The phi and omega scans indicated good in plane and out of plane orientations. The X-ray (222) pole figure showed a cube-on-cube epitaxy. High current YBCO films were grown on the Yb2O3 sol-gel buffered-Ni substrates.