Growth kinetics of MgB2 layer and interfacial MgO layer during ex situ annealing of amorphous boron film

2004 ◽  
Vol 19 (10) ◽  
pp. 3081-3089 ◽  
Author(s):  
Hyun-Mi Kim ◽  
Sung-Soo Yim ◽  
Ki-Bum Kim ◽  
Seung-Hyun Moon ◽  
Young-Woon Kim ◽  
...  
Keyword(s):  
Growth Kinetics ◽  
Interfacial Layer ◽  
Surface Reaction ◽  
Layer Growth ◽  
Ex Situ ◽  
Amorphous Boron ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Kinetics Of ◽  
Rough Surface Morphology

This paper describes the growth kinetics of an interfacial MgO layer as well as those of an MgB2 layer during ex situ annealing of the evaporated amorphous boron (a-B) film under Mg vapor overpressure. A thin MgO layer is formed at the interface between a-B and Al2O3 substrate before the formation of crystalline MgB2 layer and the interfacial layer is epitaxially related with Al2O3 substrate (MgO (111)[110] // Al2O3 (0001)[1100]). The interfacial MgO layer continues to grow during the annealing, and its apparent growth rate is about 0.1 nm/min. The analysis of MgB2 layer growth kinetics using cross-sectional transmission electron microscopy reveals that there exist two distinct growth fronts at both sides of an MgB2 layer. The growth kinetics of the lower MgB2 layer obeys the parabolic rate law during the entire annealing time. The growth of the upper MgB2 layer is controlled by the surface reaction between out-diffused boron and Mg vapor up to 10 min, resulting in a rough surface morphology of MgB2 layer. By considering the mass balance of Mg and boron during ex situ annealing, we obtained the diffusivities of Mg and boron in MgB2 layer which were in the same order range of approximately 10−12 cm2/s.

Growth of Fe/ZnSe Multilayers on GaAs (001) AND (111) by Molecular Beam Epitaxy

1995 ◽  
Vol 384 ◽  
Author(s):  
H. Abad ◽  
B. T. Jonker ◽  
C. M. Cotell ◽  
S. B. Qadri ◽  
J. J. Krebs
Keyword(s):  
High Energy ◽  
Layer Growth ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Spacer Layer ◽  
The Individual

ABSTRACTThe growth of Fe/ZnSe/Fe multilayers on (001) and (111) GaAs substrates is reported. The samples were characterized in-situ by reflection high energy electron diffraction (RHEED), and ex situ by vibrating sample magnetometry (VSM), ferromagnetic resonance (FMR), cross sectional transmission electron microscopy (TEM), and x-ray diffraction. On the (001) surface, the quality of the layers deteriorated significantly with the growth of the first ZnSe spacer layer. In Fe/ZnSe/Fe trilayer structures, TEM revealed a well-defined layered structure, with a high density of defects in both the ZnSe spacer layer and the subsequent Fe layer. VSM and FMR clearly showed the presence of two Fe films with distinct coercive fields, with the higher coercive field attributed to the lower crystalline quality of the second Fe layer. θ-2θ xray diffraction measurements performed on samples grown on (001) GaAs substrates indicated that the ZnSe spacer layer (grown on (001) Fe) grew in a (111) orientation. Growth on GaAs(111) substrates produced better RHEED patterns for all layers with little deterioration in film quality with continued layer growth, so that the magnetic properties of the individual Fe layer could not be distinguished.

A New Method of Wafer Level Plan View TEM Sample Preparation by DualBeam

2008 ◽  
Author(s):  
Hyoung H. Kang ◽  
Michael A. Gribelyuk ◽  
Oliver D. Patterson ◽  
Steven B. Herschbein ◽  
Corey Senowitz
Keyword(s):  
Sample Preparation ◽  
Ex Situ ◽  
Wafer Level ◽  
Cross Sectional ◽  
Plan View ◽  
Manufacturing Line ◽  
Transmission Electron ◽  
Thin Lamella ◽  
Preparation Techniques

Abstract Cross-sectional style transmission electron microscopy (TEM) sample preparation techniques by DualBeam (SEM/FIB) systems are widely used in both laboratory and manufacturing lines with either in-situ or ex-situ lift out methods. By contrast, however, the plan view TEM sample has only been prepared in the laboratory environment, and only after breaking the wafer. This paper introduces a novel methodology for in-line, plan view TEM sample preparation at the 300mm wafer level that does not require breaking the wafer. It also presents the benefit of the technique on electrically short defects. The methodology of thin lamella TEM sample preparation for plan view work in two different tool configurations is also presented. The detailed procedure of thin lamella sample preparation is also described. In-line, full wafer plan view (S)TEM provides a quick turn around solution for defect analysis in the manufacturing line.

Oxidation Kinetics of Cu-Ni Alloy Observed by in situ UHV-TEM

2007 ◽  
Vol 1026 ◽  
Author(s):  
Li Sun ◽  
John E. Pearson ◽  
Judith C. Yang
Keyword(s):  
High Vacuum ◽  
Alloy Film ◽  
Ultra High Vacuum ◽  
Cross Sectional ◽  
Primary Mechanism ◽  
Transmission Electron ◽  
Ni Alloy ◽  
Cu Oxidation ◽  
Kinetics Of

AbstractThe nucleation and growth of Cu2O and NiO islands due to oxidation of Cu-24%Ni(001) films were monitored at various temperatures by in situ ultra-high vacuum (UHV) transmission electron microscopy (TEM). In remarkable contrast to our previous observations of Cu and Cu-Au oxidation, irregular-shaped polycrystalline oxide islands were observed to form with respect to the Cu-Ni alloy film, and an unusual second oxide nucleation stage was noted. Similar to Cu oxidation, the cross-sectional area growth rate of the oxide island is linear indicating oxygen surface diffusion is the primary mechanism of oxide growth.

Growth kinetics of CoSi2 and Ge islands observed with in situ transmission electron microscopy

Micron ◽  
1999 ◽  
Vol 30 (1) ◽  
pp. 21-32 ◽  
Author(s):  
F.M. Ross ◽  
P.A. Bennett ◽  
R.M. Tromp ◽  
J. Tersoff ◽  
M. Reuter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Kinetics ◽  
Transmission Electron ◽  
Kinetics Of

Growth Kinetics of Interfacial Intermetallic Compound in Al(AA4343)/Steel(SUS316) Clad Strip

2020 ◽  
Vol 993 ◽  
pp. 447-456
Author(s):  
Xiao Jun Zhang ◽  
Kun Yuan Gao ◽  
Xiu Hua Hu ◽  
Yu Sheng Ding ◽  
Guo Zhan Wang ◽  
...  
Keyword(s):  
Growth Kinetics ◽  
Annealing Temperature ◽  
Optical Microscope ◽  
Alloy Layer ◽  
Kinetics Analysis ◽  
Growth Constant ◽  
Transmission Electron ◽  
Dispersive System ◽  
The Relationship ◽  
Kinetics Of

The composition and microstructure of intermetallic compounds (IMC) at the interface of aluminum(AA4343)-stainless steel(SUS316) were studied upon annealing at 550°C for 1h to 20h and at 610°C for 15min to 10h by means of optical microscope(OM) , scanning electron microscope (SEM) with energy dispersive system(EDS) and transmission Electron Microscopy (TEM). The results showed that the IMC was of 4.3μm to 36.1μm thick during heat treatment at 550°C for 1h to 20h, and the IMC contained Al-Fe-Si-Cr-Ni-Mo and Al-Fe-Si -Ni. During annealing at 610°C for 15min to 5h, the thickness of IMC was 31.2 μm to 208 μm, and the IMC were mainly of η-Fe2Al5 and τ10- Al4Fe1.7Si at 550°C for 10h. As the annealing time extended to 10h, natural delamination occurred at the interface between the aluminum alloy layer and IMC layer. The growth kinetics analysis showed that the relationship between the thickness of IMC “X” and time “t” followed the relational equation X=(kt)n. For AA4343(solid) - SUS316(solid), n was 1/2, and the growth constant k = 1.9×10-13m2/s at annealing temperature of 550 °C. When the temperature was 610°C, AA4343 - SUS316 was a liquid-solid contact reaction, n was 1, the growth constant k=1.45×10-8m/s.

scholarly journals Growth Kinetics of the Selected Intermetallic Phases in Ni/Al/Ni System with Various Nickel Substrate Microstructure

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 134 ◽  
Author(s):  
Izabella Kwiecien ◽  
Piotr Bobrowski ◽  
Anna Wierzbicka-Miernik ◽  
Lidia Litynska-Dobrzynska ◽  
Joanna Wojewoda-Budka
Keyword(s):  
Electron Microscopy ◽  
Growth Kinetics ◽  
Intermetallic Phases ◽  
Nickel Aluminum ◽  
Nickel Substrate ◽  
Electron Backscattered Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Nickel Substrates ◽  
Kinetics Of

Reactivity in nickel–aluminum system was examined for two variants of nickel substrates in terms of the size and shape of Ni grains. The microstructure transformation aroused due to the annealing at 720 °C for different annealing times (0.25 to 72 h) was consequently followed. The sequence of formation of the particular intermetallic phases was given. The interconnection zones were examined by means of scanning electron microscopy supported with energy dispersive X-ray spectroscopy and electron backscattered diffraction techniques as well as by the transmission electron microscopy. The growth kinetics data for AlNi, AlNiNi-rich and AlNi3 phases for both variants of substrates was given, indicating the differences obtained in previous works on this subject.

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