Single-Event Upsets in Microelectronics: Fundamental Physics and Issues

MRS Bulletin ◽  
2003 ◽  
Vol 28 (2) ◽  
pp. 111-116 ◽  
Author(s):  
Henry H.K. Tang ◽  
Kenneth P. Rodbell
Keyword(s):  
Cosmic Rays ◽  
Cross Sections ◽  
Background Radiation ◽  
Complementary Metal Oxide Semiconductor ◽  
Alpha Particles ◽  
Oxide Semiconductor ◽  
Thermal Neutrons ◽  
Single Event ◽  
Single Event Upsets ◽  
Future Technologies

AbstractWe review the current understanding of single-event upsets (SEUs) in microelectronic devices. In recent years, SEUs have been recognized as one of the key reliability concerns for both current and future technologies. We identify the major sources of SEUs that impact many commercial products: (1) alpha particles in packaging materials, (2) background radiation due to cosmic rays, and (3) thermal neutrons in certain device materials. The origins of SEUs are examined from the standpoint of the fundamental atomic and nuclear interactions between the intruding particles (alpha particles, cosmic rays, and thermal neutrons) and semiconductor materials. We analyze field funneling, which is a key mechanism of charge collection in a device struck by an ionizing particle. Next, we formulate how SEU cross sections and SEU rates are calculated and discuss how these basic quantities are related to experiments. Finally, we summarize the major SEU issues regarding modeling, bulk complementary metal oxide semiconductor technologies, and research on future, exploratory technologies.

scholarly journals Single event transient propagation in dynamic complementary metal oxide semiconductor cascade circuits

2015 ◽  
Vol 12 (23) ◽  
pp. 20150849-20150849 ◽  
Author(s):  
Jingyan Xu ◽  
Shuming Chen ◽  
Pengcheng Huang ◽  
Peipei Hao ◽  
Ruiqiang Song ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Single Event ◽  
Single Event Transient

scholarly journals Distance-Resolving Raman Radar Based on a Time-Correlated CMOS Single-Photon Avalanche Diode Line Sensor

Sensors ◽  
2018 ◽  
Vol 18 (10) ◽  
pp. 3200 ◽  
Author(s):  
Jere Kekkonen ◽  
Jan Nissinen ◽  
Juha Kostamovaara ◽  
Ilkka Nissinen
Keyword(s):  
Background Radiation ◽  
Single Photon ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Raman Signal ◽  
Ambient Light ◽  
Signal Ratio ◽  
Distance Information ◽  
Avalanche Diode ◽  
First Time

Remote Raman spectroscopy is widely used to detect minerals, explosives and air pollution, for example. One of its main problems, however, is background radiation that is caused by ambient light and sample fluorescence. We present here, to the best of our knowledge, the first time a distance-resolving Raman radar device that is based on an adjustable, time-correlated complementary metal-oxide-semiconductor (CMOS) single-photon avalanche diode line sensor which can measure the location of the target sample simultaneously with the normal stand-off spectrometer operation and suppress the background radiation dramatically by means of sub-nanosecond time gating. A distance resolution of 3.75 cm could be verified simultaneously during normal spectrometer operation and Raman spectra of titanium dioxide were distinguished by this system at distances of 250 cm and 100 cm with illumination intensities of the background of 250 lux and 7600 lux, respectively. In addition, the major Raman peaks of olive oil, which has a fluorescence-to-Raman signal ratio of 33 and a fluorescence lifetime of 2.5 ns, were distinguished at a distance of 30 cm with a 250 lux background illumination intensity. We believe that this kind of time-correlated CMOS single-photon avalanche diode sensor could pave the way for new compact distance-resolving Raman radars for application where distance information within a range of several metres is needed at the same time as a Raman spectrum.

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