Structural Changes Induced by Swift Heavy Ion Beams in tensile strained Al (1-x)InxN /GaN Hetero-structures

ABSTRACTWe report here swift heavy ion (SHI) irradiation induced effects on structural and surface properties of III-nitrides. Tensile strained Al(1-x)InxN/GaN Hetero-Structures (HS) were realized using Metal Organic Chemical Vapour Despotion (MOCVD) technique with indium composition as 12%. Ion species and energies are chosen such that electronic energy deposition rates differ significantly in Al(1-x)InxN and are essential for understanding the ion beam interactions at the interfaces. Thus the samples were irradiated with 80 MeV Ni6+ and 100 MeV Ag7+ ions at varied fluence (1×1012 and 3 ×1012 ions/cm2) to alter the structural properties. Under this energy regime, the structural changes in Al(1-x)InxN would occur due to the intense ultrafast excitations of electrons along the ion path. We employed different characterization techniques like High Resolution X- ray Diffraction (HRXRD) and Rutherford back scattering spectrometry (RBS) for composition, thickness and strain. HRXRD and RBS experimental spectra have been fitted with Philip’s epitaxy SIMNRA code, which yields thickness and composition from compound semiconductors. The surface morphology of pristine and irradiated samples is studied and compared by Atomic Force Microscopy (AFM).

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ChemFET sensor: Repercussion of Swift Heavy Ion irradiation on nanorods of nickel-based (NRs-Ni3HHTP2) Metal-Organic framework

10.21203/rs.3.rs-244931/v1 ◽

2021 ◽

Author(s):

Nikesh N. Ingle ◽

Pasha Sayyad ◽

Gajanan Bodkhe ◽

Harshada Patil ◽

Megha Deshmukh ◽

...

Keyword(s):

Silicon Dioxide ◽

Ion Irradiation ◽

Metal Organic Framework ◽

Silicon Layer ◽

Heavy Ion ◽

Swift Heavy Ion ◽

Metal Organic ◽

Shi Irradiation ◽

Silicon Silicon ◽

Organic Framework

Abstract Repercussion of Swift Heavy Ion (SHI) irradiation on nickel-based nanorods of Metal-Organic Framework (NRs-Ni3HHTP2-MOF) for enhancement in the properties of ChemFET based gas sensor has been investigated. Nanorods of Ni3HHTP2-MOF were synthesized by chemical method and exposed to C12+ ions irradiation with fluence 1x1011 ion/cm2 and 1x1012 ion/cm2. The structural, spectroscopic morphological and optical characterizations were carried out using x-ray diffraction (XRD), fourier transfer infrared spectroscopy (FTIR), atomic force microscopy (AFM) with scanning electron microscopy (SEM) and UV-visible spectroscopy were studied respectively. Whereas the bandgap was calculated from Tauc's plot. The synthesized nanorods of Ni3HHTP2 MOF were drop-casted on gold coated microelectrodes on silicon/silicon dioxide (Si/SiO2) substrate, where silicon layer serves as a gate and gold microelectrodes on silicon/silicon dioxide (Si/SiO2) substrate as a source and drain. The transmutations in material properties due to SHI irradiations were serviceable for enhancing field-effect transistor (transfer and output) properties.

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A Novel Nanofabrication Technique Using Focused Ion Beam (FIB), Metal Organic Chemical Vapour Deposition (MOCVD)

American Journal of Nanoscience and Nanotechnology ◽

10.11648/j.nano.20130102.11 ◽

2013 ◽

Vol 1 (2) ◽

pp. 46

Author(s):

Wasim Haskiya

Keyword(s):

Chemical Vapour Deposition ◽

Focused Ion Beam ◽

Vapour Deposition ◽

Ion Beam ◽

Chemical Vapour ◽

Organic Chemical ◽

Metal Organic ◽

Nanofabrication Technique

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Enhancement of Ammonia Sensitivity in Swift Heavy Ion Irradiated NanocrystallineSnO2Thin Films

Journal of Nanomaterials ◽

10.1155/2008/395490 ◽

2008 ◽

Vol 2008 ◽

pp. 1-4 ◽

Cited By ~ 12

Author(s):

Sanju Rani ◽

Somnath C. Roy ◽

N. K. Puri ◽

M. C. Bhatnagar ◽

D. Kanjilal

Keyword(s):

Thin Films ◽

Ion Irradiation ◽

Ion Beam ◽

Energy Levels ◽

Sol Gel ◽

Heavy Ion ◽

High Energy ◽

Electronic Energy ◽

Response Characteristics ◽

Swift Heavy Ion

Swift heavy ion irradiation is an effective technique to induce changes in the microstructure and electronic energy levels of materials leading to significant modification of properties. Here we report enhancement of ammonia (NH3) sensitivity ofSnO2thin films subjected to high-energyNi+ion irradiation. Sol-gel-derivedSnO2thin films (100 nm thickness) were exposed to 75 MeVNi+ion irradiation, and the gas response characteristics of irradiated films were studied as a function of ion fluence. The irradiated films showedp-type conductivity with a much higher response toNH3compared to other gases such as ethanol. The observed enhancement ofNH3sensitivity is discussed in context of ion beam generated electronic states in theSnO2thin films.

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Tuning the properties of Fe-BTC metal-organic frameworks (MOFs) by swift heavy ion (SHI) irradiation

Radiation Effects and Defects in Solids ◽

10.1080/10420150.2020.1825958 ◽

2020 ◽

pp. 1-10

Author(s):

Pasha W. Sayyad ◽

Nikesh N. Ingle ◽

Gajanan A. Bodkhe ◽

Megha A. Deshmukh ◽

Harshada K. Patil ◽

...

Keyword(s):

Metal Organic Frameworks ◽

Heavy Ion ◽

Swift Heavy Ion ◽

Metal Organic ◽

Shi Irradiation

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Electron microscope characterization of MOCVD-grown gap layers on Si

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144991 ◽

1986 ◽

Vol 44 ◽

pp. 724-725

Author(s):

K.M. Jones ◽

M.M. Al-Jassim ◽

J.M. Olson

Keyword(s):

Atmospheric Pressure ◽

Vapour Deposition ◽

Chemical Vapour ◽

Organic Chemical ◽

Lattice Match ◽

Si Substrates ◽

Metal Organic ◽

Good Lattice ◽

Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

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Semiconductors

10.1093/oso/9780198829942.003.0008 ◽

2018 ◽

Author(s):

L. Solymar ◽

D. Walsh ◽

R. R. A. Syms

Keyword(s):

Crystal Growth ◽

Molecular Beam ◽

Vapour Deposition ◽

Energy Levels ◽

Chemical Vapour ◽

Optical Excitation ◽

Organic Chemical ◽

Metal Organic ◽

Mathematical Relations ◽

Semiconductor Properties

Both intrinsic and extrinsic semiconductors are discussed in terms of their band structure. The acceptor and donor energy levels are introduced. Scattering is discussed, from which the conductivity of semiconductors is derived. Some mathematical relations between electron and hole densities are derived. The mobilities of III–V and II–VI compounds and their dependence on impurity concentrations are discussed. Band structures of real and idealized semiconductors are contrasted. Measurements of semiconductor properties are reviewed. Various possibilities for optical excitation of electrons are discussed. The technology of crystal growth and purification are reviewed, in particular, molecular beam epitaxy and metal-organic chemical vapour deposition.

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