Effect of Growth Conditions on Electronic and Structural Properties of GZO Films Grown by Plasma-enhanced Molecular Beam Epitaxy on p-GaN(0001)/Sapphire Templates

2011 ◽  
Vol 1315 ◽  
Author(s):  
H.Y. Liu ◽  
V. Avrutin ◽  
N. Izyumskaya ◽  
M.A. Reshchikov ◽  
S. Wolgast ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Optical Transmittance ◽  
Growth Conditions ◽  
Visible Spectral Range ◽  
Light Emitting ◽  
Surface Morphologies

Abstract:We report on a strong effect of p-GaN surface morphology on the growth mode and surface roughness of ZnO:Ga films grown by plasma-assisted molecular-beam epitaxy on p-GaN/c-sapphire templates. A range of ZnO:Ga surface morphologies varying from rough surfaces with well defined three-dimensional islands, capable to enhance light extraction in light-emitting diodes, to rather smooth surfaces with a surface roughness of ~ 2 nm suitable for vertical-cavity lasers can be achieved by controlling the surface morphologies of p-GaN. Optical transmittance measurements revealed high transparency exceeding 90% in the visible spectral range for ZnO:Ga with both types of surface morphology.

Growth of Germanium on Porous Silicon (001)

1996 ◽  
Vol 452 ◽  
Author(s):  
W. H. Thompson ◽  
Z. Yamani ◽  
H. M. Nayfeh ◽  
M.-A. Hasan ◽  
J. E. Greene ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Porous Silicon ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Porous Si ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nm Range

AbstractThe surface morphology of Ge grown on Si (001) and porous Si(001) by molecular beam epitaxy at 380 °C is examined using atomic force microscopy (AFM). For layer thicknesses of 30 nm, the surface shows islanding while still maintaining some of the underlying roughness of the surface of porous Si. For thicknesses in the 100 nm range, the surface roughness is not visible, but the islanding persists. Unlike the case of silicon where islands tend to merge and nearly disappear as the thickness of the deposited layer rises, we observe on the porous layer the persistence of the islands with no merging even for macroscopic thicknesses as large as 0.73 microns.

Growth Conditions of Erbium-Oxygen-Doped Silicon Grown by MBE

1996 ◽  
Vol 422 ◽  
Author(s):  
J. Stimmer ◽  
A. Reittinger ◽  
G. Abstreiter ◽  
H. Holzbrecher ◽  
Ch. Buchal
Keyword(s):  
Molecular Beam Epitaxy ◽  
Systematic Study ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Light Emitting Diode ◽  
Growth Conditions ◽  
Light Emitting ◽  
Doped Silicon

AbstractWe report on a systematic study of the growth parameters of erbium-oxygen-doped silicon grown by molecular beam epitaxy. The surface quality of the grown layers was measured in situ by RHEED. The samples were characterized by photoluminescence measurements and SIMS. An Er-O-doped Si light emitting diode grown with the optimized parameters is presented.

Step Flow Surface Morphology in Plasma Assisted Molecular Beam Epitaxy Grown GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
Kazuhide Kusakabe ◽  
Akihiko Kikuchi ◽  
Katsumi Kishino
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Driving Force ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Force Microscopy ◽  
Atomic Force ◽  
Flow Surface ◽  
Migration Enhanced Epitaxy ◽  
Surface Morphologies

ABSTRACTThe surface morphologies of homoepitaxial GaN films grown by molecular beam epitaxy (MBE) on metalorganic chemical vapor deposition (MOCVD) grown GaN template layers were investigated, using atomic force microscopy (AFM). Typical surface morphology of MBE-grown films on MOCVD-templates was dominated by spiral hillocks due to the high density of dislocations having a screw character and large driving force of MBE growth. Introduction of the AlN multiple interlayer (AlN -MIL) into MBE-GaN layers suppressed the formation of spiral hillocks. It was attributed to obstructing the dislocation propagation by AlN-MIL. Migration enhanced epitaxy (MEE) growth of GaN also reduced the density and tightness of spiral hillocks. This observation was attributed to that MEE growth technique decreased the driving force of growth.

MBE Growth of InSb Based Device Structures onto InSb(111)A,(111)B and InGaSb(111)A Substrates

1996 ◽  
Vol 450 ◽  
Author(s):  
A D Johnson ◽  
R Jefferies ◽  
G J Pryce ◽  
J A Beswick ◽  
T Ashley ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Optimum Growth ◽  
Mbe Growth ◽  
Light Emitting ◽  
Dopant Incorporation ◽  
Device Structures ◽  
Lattice Matched

ABSTRACTWe report on the optimum growth conditions for Molecular Beam Epitaxy (MBE) growth of InSb onto InSb (111)A and (111)B substrates. It was found that for (111)A substrates the optimum epilayer morphology was obtained for growth temperatures above 385°C and with a Sb:In ratio of 1.5:1. In contrast, for the (111)B surface, best morphology was found for growth temperatures above 385°C but with V:III ratio of ∼7.0:1. In both cases the dopant incorporation was found to be the same as the (100) surface and did not particularly depend either on V:III ratio or substrate temperature. We also describe the device characteristics of InAlSb light emitting diodes (LEDs) grown lattice matched onto ternary InGaSb(111)A substrates using the optimized growth conditions obtained.

Films Grown on Vicinal GaAs(111) Substrates By Molecular Beam Epitaxy

1992 ◽  
Vol 263 ◽  
Author(s):  
K. Yang ◽  
L. J. Schowalter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Atomic Force Microscope ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Vicinal Surfaces ◽  
Atomic Force ◽  
Morphology Of Films ◽  
Surface Morphologies

ABSTRACTThe faceted surface morphology of films grown on on-axis GaAs(111) substrates in the reconstruction regime is studied with an atomic force microscope. It reveals that facets are vicinal surfaces. Surface morphologies of films grown on substrates tilted toward different directions have been compared. An explanation is given for all observed surface morphologies. Smooth films can only be obtained on substrates tilted toward [211] in the surface reconstruction regime.

Defect morphology in thick relaxed layers of InGaAs on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 668-669
Author(s):  
R H Dixon ◽  
P Kidd ◽  
P J Goodhew
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Strained Layers ◽  
Good Surface ◽  
Transmission Electron ◽  
Device Structures ◽  
Surface Morphologies

Thick relaxed InGaAs layers grown epitaxially on GaAs are potentially useful substrates for growing high indium percentage strained layers. It is important that these relaxed layers are defect free and have a good surface morphology for the subsequent growth of device structures.3μm relaxed layers of InxGa1-xAs were grown on semi - insulating GaAs substrates by Molecular Beam Epitaxy (MBE), where the indium composition ranged from x=0.1 to 1.0. The interface, bulk and surface of the layers have been examined in planar view and cross-section by Transmission Electron Microscopy (TEM). The surface morphologies have been characterised by Scanning Electron Microscopy (SEM), and the bulk lattice perfection of the layers assessed using Double Crystal X-ray Diffraction (DCXRD).The surface morphology has been found to correlate with the growth conditions, with the type of defects grown-in to the layer (e.g. stacking faults, microtwins), and with the nature and density of dislocations in the interface.

Growth of Epitaxial IrSi3 Layers on Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
T. L. Lin ◽  
C. W. Nieh
Keyword(s):  
Surface Morphology ◽  
Molecular Beam ◽  
Solid Phase ◽  
Single Mode ◽  
Growth Conditions ◽  
Tem Analysis ◽  
Mbe Growth ◽  
Good Surface ◽  
Transmission Electron

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

scholarly journals In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 126
Author(s):  
Abdul Kareem K. Soopy ◽  
Zhaonan Li ◽  
Tianyi Tang ◽  
Jiaqian Sun ◽  
Bo Xu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gas Sensors ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Crystal Quality ◽  
Porous Structures ◽  
Light Emitting ◽  
Photochemical Etching ◽  
Recent Advances ◽  
Low Dimensional

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

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