MBE Growth of InSb Based Device Structures onto InSb(111)A,(111)B and InGaSb(111)A Substrates

1996 ◽  
Vol 450 ◽  
Author(s):  
A D Johnson ◽  
R Jefferies ◽  
G J Pryce ◽  
J A Beswick ◽  
T Ashley ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Optimum Growth ◽  
Mbe Growth ◽  
Light Emitting ◽  
Dopant Incorporation ◽  
Device Structures ◽  
Lattice Matched

ABSTRACTWe report on the optimum growth conditions for Molecular Beam Epitaxy (MBE) growth of InSb onto InSb (111)A and (111)B substrates. It was found that for (111)A substrates the optimum epilayer morphology was obtained for growth temperatures above 385°C and with a Sb:In ratio of 1.5:1. In contrast, for the (111)B surface, best morphology was found for growth temperatures above 385°C but with V:III ratio of ∼7.0:1. In both cases the dopant incorporation was found to be the same as the (100) surface and did not particularly depend either on V:III ratio or substrate temperature. We also describe the device characteristics of InAlSb light emitting diodes (LEDs) grown lattice matched onto ternary InGaSb(111)A substrates using the optimized growth conditions obtained.

Effect of Growth Conditions on Electronic and Structural Properties of GZO Films Grown by Plasma-enhanced Molecular Beam Epitaxy on p-GaN(0001)/Sapphire Templates

2011 ◽  
Vol 1315 ◽  
Author(s):  
H.Y. Liu ◽  
V. Avrutin ◽  
N. Izyumskaya ◽  
M.A. Reshchikov ◽  
S. Wolgast ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Optical Transmittance ◽  
Growth Conditions ◽  
Visible Spectral Range ◽  
Light Emitting ◽  
Surface Morphologies

Abstract:We report on a strong effect of p-GaN surface morphology on the growth mode and surface roughness of ZnO:Ga films grown by plasma-assisted molecular-beam epitaxy on p-GaN/c-sapphire templates. A range of ZnO:Ga surface morphologies varying from rough surfaces with well defined three-dimensional islands, capable to enhance light extraction in light-emitting diodes, to rather smooth surfaces with a surface roughness of ~ 2 nm suitable for vertical-cavity lasers can be achieved by controlling the surface morphologies of p-GaN. Optical transmittance measurements revealed high transparency exceeding 90% in the visible spectral range for ZnO:Ga with both types of surface morphology.

scholarly journals Growth of (110) GaAs/GaAs by Molecular Beam Epitaxy

1985 ◽  
Vol 46 ◽  
Author(s):  
L.T. Parechanian ◽  
E.R. Weber ◽  
T.L. Hierl
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Hall Effect ◽  
Room Temperature ◽  
Molecular Beam ◽  
Defect Density ◽  
Temperature Dependent ◽  
Mbe Growth ◽  
Order Of Magnitude ◽  
Hall Effect Measurements

AbstractThe simultaneous molecular beam epitaxy (MBE) growth of (100) and (110) GaAs/GaAsintentionally doped with Si(∼lE16/cm^3) was studied as a function of substrate temperature, arsenic overpressure, and epitaxial growth rate. The films wereanalyzed by scanning electron and optical microscopy, liquid helium photoluminescence (PL), and electronic characterization.For the (110) epitaxal layers, an increase in morphological defect density and degradation of PL signal was observed with a lowering of the substrate temperature from 570C. Capacitance-voltage (CV) and Hall Effect measurements yield room temperature donor concentrations for the (100) films of n∼l5/cm^3 while the (110) layers exhibit electron concentrations of n∼2El7/cm^3. Hall measurements at 77K on the (100) films show the expected mobility enhancement of Si donors, whereas the (110) epi layers become insulating or greatly compensated. This behavior suggests that room temperature conduction in the (110) films is due to a deeper donor partially compensated by an acceptor level whose concentration is of the same order of magnitude as that of any electrically active Si. Temperature dependent Hall effect indicates that the activation energy of the deeper donor level lies ∼290 meV from the conduction band. PL and Hall effect indicate that the better quality (110) material is grown by increasingthe arsenic flux during MBE growth. The nature of the defects involved with the growth process will be discussed.

Simulations of molecular beam epitaxy growth of GaAs

2000 ◽  
Vol 648 ◽  
Author(s):  
Z. Zhang ◽  
B. G. Orr
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Numerical Simulations ◽  
Molecular Beam ◽  
High Surface ◽  
Molecular Beam Epitaxy Growth ◽  
Smooth Surfaces ◽  
Mbe Growth ◽  
Surface Mobility ◽  
Key Aspects

AbstractNumerical simulations have been performed for generic III-V MBE growth. The key aspects of the simulation include two deposited species one volatile and the second with high surface mobility. Simulations reproduce the experimentally observed adatom concentrations for GaAs and show that smooth surfaces are produced for films deposited with a substrate temperature in a crossover regime between kinetically limited and entropically roughened growth.

MBE GROWTH OF NON-LATTICE MATCHED (BaCa)F2, (Pb,Sn)Se/(Ba,Ca)F 2 AND CdTe/(Ba,Ca)F2 ON Si SUBSTRATES

1985 ◽  
Vol 56 ◽  
Author(s):  
H. ZOGG ◽  
P. MAIER ◽  
P. NORTON
Keyword(s):  
Molecular Beam Epitaxy ◽  
Mechanical Stress ◽  
Lattice Constant ◽  
Molecular Beam ◽  
Rutherford Backscattering ◽  
Epitaxial Layers ◽  
Mbe Growth ◽  
Electron Channeling ◽  
Si Substrates ◽  
Lattice Matched

AbstractGraded (Ca,Ba)F2 layers consisting of near lattice matched CaF2 at the Si interface and of BaF2 with 14% increased lattice constant at the top surface were grown by molecular beam epitaxy (MBE) on Si(111). Smooth and crackfree layers exhibiting Rutherford backscattering (RBS) channeling minima below 5% were obtained. Device quality epitaxial layers of PbTe, PbSe and (Pb,Sn)Se were grown on top of these structures. Mechanical stress at 300K was relaxed by athermal mechanisms in the fluoride- as well as in the Pb-salt films. - In preliminary runs, epitaxial CdTe-layers were obtained on Si(111) using the same fluoride-buffer film technique and which showed clear SEM electron channeling patterns.

Growth Conditions of Erbium-Oxygen-Doped Silicon Grown by MBE

1996 ◽  
Vol 422 ◽  
Author(s):  
J. Stimmer ◽  
A. Reittinger ◽  
G. Abstreiter ◽  
H. Holzbrecher ◽  
Ch. Buchal
Keyword(s):  
Molecular Beam Epitaxy ◽  
Systematic Study ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Light Emitting Diode ◽  
Growth Conditions ◽  
Light Emitting ◽  
Doped Silicon

AbstractWe report on a systematic study of the growth parameters of erbium-oxygen-doped silicon grown by molecular beam epitaxy. The surface quality of the grown layers was measured in situ by RHEED. The samples were characterized by photoluminescence measurements and SIMS. An Er-O-doped Si light emitting diode grown with the optimized parameters is presented.

Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam Epitaxy

1990 ◽  
Vol 29 (Part 1, No. 3) ◽  
pp. 468-474 ◽  
Author(s):  
Kazuo Tsutsui ◽  
Hiroyuki Mizukami ◽  
Osamu Ishiyama ◽  
Satoshi Nakamura ◽  
Seijiro Furukawa
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Optimum Growth

scholarly journals Low-Temperature In-Induced Holes Formation in Native-SiOx/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3449
Author(s):  
Rodion R. Reznik ◽  
Konstantin P. Kotlyar ◽  
Vladislav O. Gridchin ◽  
Evgeniy V. Ubyivovk ◽  
Vladimir V. Federov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Energy Dispersive ◽  
Mbe Growth ◽  
X Ray ◽  
Gaas Nanowires ◽  
The Way

The reduction of substrate temperature is important in view of the integration of III–V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiOx layer on Si(111) substrate via In-induced drilling. Using the fabricated template, we successfully grew self-catalyzed GaAs nanowires by molecular-beam epitaxy. Energy-dispersive X-ray analysis reveals no indium atoms inside the nanowires. This unambiguously manifests that the procedure proposed can be used for the growth of ultra-pure GaAs nanowires.

Molecular beam epitaxy (MBE) growth of ZnMgSeTe light-emitting diodes

1994 ◽  
Author(s):  
Wolfgang Faschinger ◽  
S. Ferreira ◽  
R. Krump ◽  
G. Brunthaler ◽  
Helmut Sitter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Mbe Growth ◽  
Light Emitting

Effect of Growth Conditions on Optical Response of GaAs Grown at Low Substrate Temperature by MBE

1991 ◽  
Vol 241 ◽  
Author(s):  
W. J. Schaff ◽  
S. D. Offsey ◽  
X. J. Song ◽  
L. F. Eastman ◽  
T. B. Norris ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Response Time ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Optical Response ◽  
Growth Conditions ◽  
Recent Model ◽  
Light Pulses ◽  
Substrate Temperatures

ABSTRACTThe effect of growth conditions on the properties of GaAs grown by molecular beam epitaxy at low substrate temperatures has been studied. It has been found that the response time to 100 fsec 830nm light pulses is a function of substrate temperature and arsenic flux. The reason for variation of optical response with growth conditions is related to the nature of the incorporation of excess arsenic. A recent model proposed by Warren and others is invoked to explain the change in optical response with growth conditions. Further substantiation of this model comes from experiments on the annealing of low substrate temperature GaAs which has been doped with silicon.

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