Correlation between Controllability of Reset Current and Electrostatic Energy Released from the Self Capacitance of Conducting Bridge Random Access Memory

2012 ◽  
Vol 1430 ◽  
Author(s):  
Kentaro Kinoshita ◽  
Shigeyuki Tsuruta ◽  
Sho Hasegawa ◽  
Takahiro Fukuhara ◽  
Satoru Kishida
Keyword(s):  
Random Access ◽  
Liquid Nitrogen Temperature ◽  
Electrostatic Energy ◽  
Universal Relation ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Compliance ◽  
And Migration ◽  
Conducting Bridge

ABSTRACTPhysical properties of filaments in Cu/HfO2/Pt conducting-bridge memory (CB-RAM) were investigated basing on direct observation by conducting atomic force microscopy (C-AFM) and energy dispersive X-ray spectroscopy (EDS), R-T characteristics until liquid nitrogen temperature, and I-V characteristics both in air and in vacuum. As a result, physical picture of filaments in Cu/HfO2/Pt structures was revealed. Filaments consist of Cu containing large residual resistance and the cross-sectional area of the filament, Sfila, was roughly proportional to set voltage, Vset, even when current compliance was kept constant. Interestingly, resistivities of filaments are same among all the filaments in different samples and are invariant even after repetitive switching that changes resistance of the filaments. Cu/HfO2/Pt obeyed the universal relation that reset current, Ireset, is proportional to the inverse of resistance in a low resistance state, 1/RLRS, which is known to be applicable to oxygen-migration-based resistive switching memories such as Pt/NiO/Pt. Considering the invariance of resistivity of the filament, this suggests the fact that Ireset is decided dominantly by Sfila. In addition, it was suggested that moisture is necessary for dissolution and migration of Cu to form filaments.

scholarly journals Neuromorphic Dynamics at the Nanoscale in Silicon Suboxide RRAM

2021 ◽  
Vol 3 ◽  
Author(s):  
Mark Buckwell ◽  
Wing H. Ng ◽  
Daniel J. Mannion ◽  
Horatio R. J. Cox ◽  
Stephen Hudziak ◽  
...  
Keyword(s):  
Low Power ◽  
Random Access ◽  
Constant Current ◽  
Conductive Atomic Force Microscopy ◽  
Cross Sectional ◽  
Conductivity Enhancement ◽  
Force Microscopy ◽  
Atomic Force ◽  
Silicon Suboxide ◽  
Power Operation

Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic applications due to their scalability, low-power operation and diverse functional behaviors. However, understanding the dynamics of individual filaments, and the surrounding material, is challenging, owing to the typically very large cross-sectional areas of test devices relative to the nanometer scale of individual filaments. In the present work, conductive atomic force microscopy is used to study the evolution of conductivity at the nanoscale in a fully CMOS-compatible silicon suboxide thin film. Distinct filamentary plasticity and background conductivity enhancement are reported, suggesting that device behavior might be best described by composite core (filament) and shell (background conductivity) dynamics. Furthermore, constant current measurements demonstrate an interplay between filament formation and rupture, resulting in current-controlled voltage spiking in nanoscale regions, with an estimated optimal energy consumption of 25 attojoules per spike. This is very promising for extremely low-power neuromorphic computation and suggests that the dynamic behavior observed in larger devices should persist and improve as dimensions are scaled down.

Cross-sectional atomic force microscopy of ZnMgSSe- and BeMgZnSe-based laser diodes

1999 ◽  
Vol 75 (17) ◽  
pp. 2626-2628 ◽  
Author(s):  
A. V. Ankudinov ◽  
A. N. Titkov ◽  
T. V. Shubina ◽  
S. V. Ivanov ◽  
P. S. Kop’ev ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Laser Diodes ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force

Cross-sectional observation of NaClO stain-etched Al0.5Ga0.5As/GaAs multilayer by atomic force microscopy

1995 ◽  
Vol 30 (3) ◽  
pp. 678-682 ◽  
Author(s):  
Hee Jeen Kim ◽  
Jae Sung Kim ◽  
Yong Kim ◽  
Moo Sung Kim ◽  
Suk-Ki Min
Keyword(s):  
Atomic Force Microscopy ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force

Cross-Sectional Nanoindentation of Alumina Thin Films Deposited by Pulsed Laser Deposition Process

2006 ◽  
Author(s):  
Sudheer Neralla ◽  
Sergey Yarmolenko ◽  
Dhananjay Kumar ◽  
Devdas Pai ◽  
Jag Sankar
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Hardness ◽  
Deposition Process ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Adhesion Properties ◽  
Force Microscopy ◽  
Atomic Force

Alumina is a widely used ceramic material due to its high hardness, wear resistance and dielectric properties. The study of phase transformation and its correlation to the mechanical properties of alumina is essential. In this study, interfacial adhesion properties of alumina thin films are studied using cross-sectional nanoindentation (CSN) technique. Alumina thin films are deposited at 200 and 700 °C, on Si (100) substrates with a weak Silica interface, using pulsed laser deposition (PLD) process. Effect of annealing on the surface morphology of the thin films is studied using atomic force microscopy. Xray diffraction studies revealed that alumina thin films are amorphous in nature at 200 °C and polycrystalline with predominant gamma alumina phase at 700 °C.

TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth

2020 ◽  
Vol 1004 ◽  
pp. 414-420
Author(s):  
Junro Takahashi ◽  
Kotaro Kawaguchi ◽  
Kazuhiko Kusunoki ◽  
Tomoyuki Ueyama ◽  
Kazuhito Kamei
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solution Growth ◽  
Spiral Growth ◽  
Growth Surface ◽  
Vicinal Surface ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

We have studied the microstructure of the growth surface of the 4H-SiC grown by the m-face solution growth. Atomic Force Microscopy (AFM) revealed the micro-striped morphology with the asperity of several nm in the band-like morphology region. The cross-sectional Transmission Electron Microscopy (XTEM) showed that the growth surface consisted of a bunch of nanofacets and vicinal surface. This peculiar morphology is totally different from that of conventional spiral growth on c-face, which can be closely related with the growth mechanism of the m-face solution growth.

Fabrication and Characterization of Transparent ZnO Film Based Resistive Switching Devices

2014 ◽  
Vol 609-610 ◽  
pp. 565-570 ◽  
Author(s):  
Hong Xia Li ◽  
Dong Dong Shen ◽  
Wei Qing Ke ◽  
Jun Hua Xi ◽  
Zhe Kong ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Visible Region ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Force Microscopy ◽  
Conductive Glass ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Sweeping Method ◽  
Switching Characteristics

In this paper, ZnO thin films were prepared on ITO conductive glass by direct current magnetron sputtering and the Cu electrodes were evaporated on ZnO/ITO by electric beam evaporation to get transparent Cu/ZnO/ITO resistive random access memory. The crystal structure and surface morphology were investigated by X-ray diffraction and atomic force microscopy, respectively. The transmittance spectra of ZnO/ITO in the visible region were measured by UV-VIS spectroscopy. The resistive switching characteristics of the fabricated devices were investigated by the voltage sweeping method, which showed that the transparent Cu/ZnO/ITO device had good resistive switching characteristics.

Nanomechanical Properties and Nanostructure of CMG and CMP Machined Si Substrates

2008 ◽  
Vol 381-382 ◽  
pp. 525-528 ◽  
Author(s):  
B.L. Wang ◽  
Han Huang ◽  
Jin Zou ◽  
Li Bo Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Electron Microscopy Analysis

Silicon (100) substrates machined by chemo-mechanical-grinding (CMG) and chemicalmechanical- polishing (CMP) were investigated using atomic force microscopy, cross-sectional transmission electron microscopy and nanoindentation. It was found that the substrate surface after CMG was slightly better than machined by CMP in terms of roughness. The transmission electron microscopy analysis showed that the CMG-generated subsurface was defect-free, but the CMP specimen had a crystalline layer of about 4 nm in thickness on the top of the silicon lattice as evidenced by the extra diffraction spots. Nanoindentation results indicated that there exists a slight difference in mechanical properties between the CMG and CMP machined substrates.

Chemical and Structural Analysis of Nitridated Sapphire

1997 ◽  
Vol 482 ◽  
Author(s):  
Y. Cho ◽  
S. Rouvimov ◽  
Y. Kim ◽  
Z. Liliental-Weber ◽  
E. R. Weber
Keyword(s):  
Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Structural Analysis ◽  
Photoelectron Spectroscopy ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Resolution Electron

AbstractThe incorporation of nitrogen into sapphire substrates during nitridation was studied by xray photoelectron spectroscopy (XPS). An increase in the intensity of nitrogen 1s peak in XPS was observed upon longer nitridation. The surface morphology of the substrates was characterized by atomic force microscopy (AFM). High resolution electron microscopy (HREM) was employed for structural analysis. The cross sectional TEM showed a thin layer of AlN buried between amorphous AlNxO1−x and sapphire. This is the first direct observation of AlN on sapphire. The TEM images show a deeper penetration depth of nitrogen into a longer nitridated sapphire.

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