1.54μm luminescence of β-FeSi2 grown on Au-coated Si substrates

2012 ◽  
Vol 1396 ◽  
Author(s):  
Kensuke Akiyama ◽  
Hiroshi Funakubo ◽  
Masaru Itakura
Keyword(s):  
Temperature Dependence ◽  
Radiative Recombination ◽  
Recombination Center ◽  
Quality Level ◽  
Nonradiative Recombination ◽  
Si Substrate ◽  
High Quality ◽  
Nonradiative Recombination Center ◽  
Si Substrates ◽  
Photoluminescence Peak

ABSTRACTA clear PL spectrum was observed from β-FeSi2 grains on gold (Au)-coated (100)Si substrates, and indicated the formation of crystal with the same high quality level as the β-FeSi2 on a copper (Cu)-coated Si substrate. Moreover, the temperature dependence of photoluminescence peak intensities showed lower density of the nonradiative recombination center in β-FeSi2 grains on Au-coated Si substrates than that of β-FeSi2 film on Cu-coated Si. Au was not detected in β-FeSi2 grains by STEM-EDX observation, while Cu was observed in the grains and grain boundaries of β-FeSi2 and rolled as non-radiative recombination center.

Control of Iron Disilicide Crystal Structure by Using Liquid Phase Obtained by Au-Si Eutectic Reaction

2015 ◽  
Vol 1760 ◽  
Author(s):  
Kensuke Akiyama ◽  
Yuu Motoizumi ◽  
Hiroshi Funakubo
Keyword(s):  
Liquid Phase ◽  
Photoluminescence Spectrum ◽  
Radiative Recombination ◽  
Single Phase ◽  
Eutectic Reaction ◽  
Substrate Surface ◽  
Low Density ◽  
Si Substrate ◽  
High Quality ◽  
Iron Disilicide

ABSTRACTThe Au-Si liquid phase was obtained by melting the Si surface via Au-Si eutectic reaction, which contributed to the formation of semiconducting iron disilicide (β-FeSi2), on Au-coated Si(100) substrates. By coating a substrate with an Au layer of 60 nm or more, the Au-Si liquid phase covered the entire Si substrate surface, and single-phase β-FeSi2 was grown on Si(100) substrates. A clear photoluminescence spectrum of β-FeSi2 indicated the formation of high-quality crystals with a low density of the non-radiative recombination center in the grains.

Reduction of nonradiative recombination center for ZnO films grown under Zn-rich conditions by metal organic chemical vapor deposition

2010 ◽  
Vol 97 (13) ◽  
pp. 131913 ◽  
Author(s):  
Eiji Fujimoto ◽  
Kenji Watanabe ◽  
Yuji. Matsumoto ◽  
Hideomi Koinuma ◽  
Masatomo Sumiya
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Recombination Center ◽  
Organic Chemical ◽  
Zno Films ◽  
Nonradiative Recombination ◽  
Nonradiative Recombination Center ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Dynamic defect as nonradiative recombination center in semiconductors

2019 ◽  
Vol 100 (24) ◽  
Author(s):  
Junhyeok Bang ◽  
Sheng Meng ◽  
S. B. Zhang
Keyword(s):  
Recombination Center ◽  
Nonradiative Recombination ◽  
Nonradiative Recombination Center

Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane

2010 ◽  
Vol 645-648 ◽  
pp. 147-150 ◽  
Author(s):  
Eiji Saito ◽  
Sergey Filimonov ◽  
Maki Suemitsu
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Growth Temperature ◽  
High Rate ◽  
Si Substrate ◽  
Single Crystalline ◽  
Step Process ◽  
Si Substrates ◽  
Sic Film

Temperature dependence of the growth rate of 3C-SiC(001) films on Si(001) substrates during ultralow-pressure (ULP: ~10-1 Pa) CVD using monomethylsilane has been investigated in detail by using pyrometric interferometry. A novel behavior, i.e. a sharp division of the growth mode into two regimes depending on the growth temperature, has been found to exist. Based on this finding, we have developed a two-step process, which realizes a low-temperature (900 °C), high-rate growth of single-crystalline 3C-SiC film on Si substrates, whose rate of 3 m/h is extremely high for this ULP process.

High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon

2013 ◽  
Vol 740-742 ◽  
pp. 327-330 ◽  
Author(s):  
Maki Suemitsu ◽  
Shota Sanbonsuge ◽  
Eiji Saito ◽  
Myung Ho Jung ◽  
Hirokazu Fukidome ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
The Other ◽  
High Rate ◽  
Si Substrate ◽  
High Quality ◽  
Si Substrates ◽  
Growth Method ◽  
Step Growth ◽  
Sic Film ◽  
Sic Films

In the formation of epitaxial graphene on Si substrates, the growth of high-quality 3C-SiC thin films on Si substrates is a key to success. As a solution to the large mismatch between the Si substrate and the 3C-SiC film, rotated epitaxy in which 3C-SiC(111) films are grown on Si(110) substrates is quite attractive. In some applications, on the other hand, a certatin thickness (~100 nm or more) is required for this 3C-SiC films as well. A two-step growth method has been thus developed to realize a high-rate, qualified rotated epitaxy. A qualified graphene is found to be formed on this rotated epi-film, as typified by the increase of the grain size by a factor of 1.6 from the non-rotated epitaxy.

An artificial nonradiative recombination center model created by use of a Si1−xGex/Si quantum-well-inserted pseudomorphic superlattice

2012 ◽  
Vol 520 (8) ◽  
pp. 3365-3368
Author(s):  
Yosuke Terada ◽  
Yuhsuke Yasutake ◽  
Susumu Fukatsu
Keyword(s):  
Quantum Well ◽  
Recombination Center ◽  
Nonradiative Recombination ◽  
Nonradiative Recombination Center

Calcium as a nonradiative recombination center in InGaN

2017 ◽  
Vol 10 (2) ◽  
pp. 021001 ◽  
Author(s):  
Jimmy-Xuan Shen ◽  
Darshana Wickramaratne ◽  
Cyrus E. Dreyer ◽  
Audrius Alkauskas ◽  
Erin Young ◽  
...  
Keyword(s):  
Recombination Center ◽  
Nonradiative Recombination ◽  
Nonradiative Recombination Center

Identification of a nonradiative recombination center in GaAs

1992 ◽  
Vol 72 (9) ◽  
pp. 4449-4451 ◽  
Author(s):  
P. Michler ◽  
A. Hangleiter ◽  
R. Dieter ◽  
F. Scholz
Keyword(s):  
Recombination Center ◽  
Nonradiative Recombination ◽  
Nonradiative Recombination Center
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