Control of Iron Disilicide Crystal Structure by Using Liquid Phase Obtained by Au-Si Eutectic Reaction

ABSTRACTThe Au-Si liquid phase was obtained by melting the Si surface via Au-Si eutectic reaction, which contributed to the formation of semiconducting iron disilicide (β-FeSi2), on Au-coated Si(100) substrates. By coating a substrate with an Au layer of 60 nm or more, the Au-Si liquid phase covered the entire Si substrate surface, and single-phase β-FeSi2 was grown on Si(100) substrates. A clear photoluminescence spectrum of β-FeSi2 indicated the formation of high-quality crystals with a low density of the non-radiative recombination center in the grains.

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1.54μm luminescence of β-FeSi2 grown on Au-coated Si substrates

MRS Proceedings ◽

10.1557/opl.2012.85 ◽

2012 ◽

Vol 1396 ◽

Cited By ~ 1

Author(s):

Kensuke Akiyama ◽

Hiroshi Funakubo ◽

Masaru Itakura

Keyword(s):

Temperature Dependence ◽

Radiative Recombination ◽

Recombination Center ◽

Quality Level ◽

Nonradiative Recombination ◽

Si Substrate ◽

High Quality ◽

Nonradiative Recombination Center ◽

Si Substrates ◽

Photoluminescence Peak

ABSTRACTA clear PL spectrum was observed from β-FeSi2 grains on gold (Au)-coated (100)Si substrates, and indicated the formation of crystal with the same high quality level as the β-FeSi2 on a copper (Cu)-coated Si substrate. Moreover, the temperature dependence of photoluminescence peak intensities showed lower density of the nonradiative recombination center in β-FeSi2 grains on Au-coated Si substrates than that of β-FeSi2 film on Cu-coated Si. Au was not detected in β-FeSi2 grains by STEM-EDX observation, while Cu was observed in the grains and grain boundaries of β-FeSi2 and rolled as non-radiative recombination center.

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Growth of high-quality AlN epitaxial film by optimizing the Si substrate surface

Applied Surface Science ◽

10.1016/j.apsusc.2017.11.002 ◽

2018 ◽

Vol 435 ◽

pp. 163-169 ◽

Cited By ~ 13

Author(s):

Liegen Huang ◽

Yuan Li ◽

Wenliang Wang ◽

Xiaochan Li ◽

Yulin zheng ◽

...

Keyword(s):

Epitaxial Film ◽

Substrate Surface ◽

Si Substrate ◽

High Quality

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Iron disilicide formation by Au–Si eutectic reaction on Si substrate

Applied Surface Science ◽

10.1016/j.apsusc.2009.05.168 ◽

2009 ◽

Vol 256 (4) ◽

pp. 1244-1248 ◽

Cited By ~ 5

Author(s):

Kensuke Akiyama ◽

Satoru Kaneko ◽

Kazuya Yokomizo ◽

Masaru Itakura

Keyword(s):

Eutectic Reaction ◽

Si Substrate ◽

Iron Disilicide

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Method of GaAs Growth on Single Crystal Si Substrate

MRS Proceedings ◽

10.1557/proc-263-199 ◽

1992 ◽

Vol 263 ◽

Author(s):

Valery V. Dorogan ◽

V.A. Kosyak ◽

V.G. Trofim

Keyword(s):

Growth Rate ◽

Liquid Phase ◽

Substrate Surface ◽

Deposition Process ◽

Temperature Gradients ◽

Si Substrate ◽

Island Growth ◽

Si Substrates ◽

Epitaxial Deposition ◽

Substrate Dissolution

ABSTRACTIn the proposed method space and time temperature gradients are used for GaAs epitaxial deposition on Si substrates from liquid phase. Minimal Si substrate dissolution and preferential GaAs deposition from the liquid phase on Si substrate can be obtained by selecting dissolvents, requiring necessary gradients temperature values and times of active phases interaction. Because of nonuniformities in the etched Si substrate surface act as crystallization centres, the deposition process begins from GaAs island growth. Due to the dominate tangential growth rate, the separate single crystals coalesce into a GaAs monolayer.

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Crystal growth of high quality hybrid GaAs heteroepitaxial layers on Si substrate by metalorganic chemical vapor deposition and liquid phase epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)00409-6 ◽

1998 ◽

Vol 192 (1-2) ◽

pp. 23-27 ◽

Cited By ~ 7

Author(s):

S. Saravanan ◽

K. Jeganathan ◽

K. Baskar ◽

T. Jimbo ◽

T. Soga ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Crystal Growth ◽

Liquid Phase ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Si Substrate ◽

High Quality ◽

Heteroepitaxial Layers ◽

Metalorganic Chemical

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Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138932 ◽

1995 ◽

Vol 53 ◽

pp. 512-513

Author(s):

L. Mulestagno ◽

J.C. Holzer ◽

P. Fraundorf

Keyword(s):

Sample Preparation ◽

Milling Time ◽

High Density ◽

Low Density ◽

Ion Milling ◽

High Quality ◽

Variable Angle ◽

Major Disadvantage ◽

Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

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