Correlation of resistance switching behaviors with dielectric functions of manganite films: A study by spectroscopic ellipsometry

2014 ◽  
Vol 1633 ◽  
pp. 117-122
Author(s):  
Masaki Yamada ◽  
Toshihiro Nakamura ◽  
Osamu Sakai
Keyword(s):  
Oscillator Strength ◽  
Spectroscopic Ellipsometry ◽  
Oxygen Vacancies ◽  
Rf Magnetron Sputtering ◽  
Resistance Switching ◽  
Deposition Pressure ◽  
High Frequency Dielectric Constant ◽  
Current Voltage ◽  
Dc Current ◽  
Low Pressures

ABSTRACTPr0.5Ca0.5MnO3 (PCMO) films were deposited on LaAlO3 (100) substrates under pressure from 1.33 to 5.33 Pa by RF magnetron sputtering. Resistance switching and dielectric functions of PCMO films were studied by DC current-voltage characteristic measurements and spectroscopic ellipsometry (SE) measurements. Resistance switching was observed in the devices composed of PCMO films deposited under low pressures of 1.33 and 2.67 Pa. SE measurements revealed that dielectric functions also depended on deposition pressure. PCMO films deposited under lower pressure had larger high-frequency dielectric constant, larger oscillator strength of the electric dipole charge transitions in MnO6 octahedral complexes, and lower oscillator strength of d-d transitions in Mn3+ and Mn4+ ions. SE measurements suggested that oxygen vacancies and MnO6 octahedral complexes play an important role in resistance switching in PCMO films.

Electron Conduction of Nd0.6Sr0.4FeO3−δ Thin Film with Oxygen Vacancies Prepared by RF Magnetron Sputtering

2017 ◽  
Vol 86 (7) ◽  
pp. 074704 ◽  
Author(s):  
Wataru Namiki ◽  
Takashi Tsuchiya ◽  
Makoto Takayanagi ◽  
Shoto Furuichi ◽  
Makoto Minohara ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Oxygen Vacancies ◽  
Rf Magnetron Sputtering ◽  
Electron Conduction

MECHANISM STUDY ON OXYGEN VACANCY INDUCED RESISTANCE SWITCHING IN Au/LaMnO3/SrNb0.01Ti0.99O3

2013 ◽  
Vol 27 (11) ◽  
pp. 1350074 ◽  
Author(s):  
YU-LING JIN ◽  
ZHONG-TANG XU ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Vacancy Concentration ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Oxygen Vacancy Concentration ◽  
Mechanism Study ◽  
Switching Performance ◽  
Switching Characteristics

Mechanism of resistance switching in heterostructure Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 was investigated. In Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 devices the LaMnO 3 films were fabricated under various oxygen pressures. The content of the oxygen vacancies has a significant impact on the resistance switching performance. We propose that the resistance switching characteristics of Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 arise from the modulation of the Au / LaMnO 3 Schottky barrier due to the change of the oxygen vacancy concentration at Au / LaMnO 3 interface under the external electric field. The effect of the oxygen vacancy concentration on the resistance switching is explained based on the self-consistent calculation. Both the experimental and numerical results confirm the important role of the oxygen vacancies in the resistance switching behavior.

Ferroelectric Property and Microstructures of La-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 114-117
Author(s):  
X.A. Mei ◽  
Rui Fang Liu ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
La Doped

La-doped bismuth titanate (Bi4-xLaxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BLT ceramic with x=0.75 were above 20μC/cm2 and 85KV/cm , respectively.

Effect of Annealing on the Surface Morphology and Current–Voltage Characterization of a CZO Structure Prepared by RF Magnetron Sputtering

2021 ◽  
Vol 55 (1) ◽  
pp. 28-36
Author(s):  
B. Kınacı ◽  
E. Çelik ◽  
E. Çokduygulular ◽  
Ç. Çetinkaya ◽  
Y. Yalçın ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Current Voltage

First-Principles Modeling for Current-Voltage Characteristics of Resistive Random Access Memories

2013 ◽  
Vol 1562 ◽  
Author(s):  
Takehide Miyazaki ◽  
Hisao Nakamura ◽  
Kengo Nishio ◽  
Hisashi Shima ◽  
Hiroyuki Akinaga ◽  
...  
Keyword(s):  
First Principles ◽  
Oxygen Vacancies ◽  
Electrode Materials ◽  
Random Access ◽  
Model Systems ◽  
Electronic Coupling ◽  
Current Ratio ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Non Equilibrium Green’S Function

ABSTRACTWe present results of first-principles non-equilibrium Green’s function calculations for current-voltage (IV) characteristics of the electrode/HfO2/electrode model systems. In order to investigate the effect of the electrode materials on the IV characteristics, we considered two transition metals for electrode, Ta and W, which are both body-centered-cubic elemental metals but have different valence numbers. We simulated the ON state by placing oxygen vacancies in the HfO2 layer while the OFF state was modeled with HfO2 without oxygen vacancies. At the OFF state, no electric current flowed for -1 V up to +1 V, as expected. At the ON state, however, we found that the absolute current for the Ta electrode was twice as large as that for the W electrode. The analysis of the IV characteristics shows that the electronic coupling between Ta and HfO2 is substantially stronger than that between W and HfO2. Our study demonstrates the importance of the matching between electrode and insulator materials to achieve a high ON- to OFF-current ratio in ReRAMs at a low bias.

Reproducible resistance switching for BaTiO3 thin films fabricated by RF-magnetron sputtering

2011 ◽  
Vol 519 (10) ◽  
pp. 3291-3294 ◽  
Author(s):  
Chang Hwa Jung ◽  
Seong Ihl Woo ◽  
Yun Seok Kim ◽  
Kwang Soo No
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Resistance Switching

Large Remanent Polarization of Pm2O3-Doped Bi4Ti3O12 Films

2013 ◽  
Vol 591 ◽  
pp. 104-107
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
C.Q. Huang
Keyword(s):  
Remanent Polarization ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics

Pm-doped bismuth titanate (Pm4-xLaxTi3O12: BPT) and pure Bi4Ti3O12(BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25, 1.0, and 1.25, the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75, the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Fims with x=0.75 were above 40μC/cm2 and 60KV/cm , respectively.

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