MBE Growth of Cubic InN

2006 ◽  
Vol 955 ◽  
Author(s):  
Jörg Schörmann ◽  
Donat Josef As ◽  
Klaus Lischka

ABSTRACTCubic InN films were grown on top of a c-GaN buffer layer by rf-plasma assisted MBE at different growth temperatures. X-Ray diffraction investigations show that the c-InN layers consist of a nearly phase-pure zinc blende (cubic) structure with a small fraction of the wurtzite (hexagonal) phase grown on the (111) facets of the cubic layer. The content of hexagonal inclusions is decreasing with decreasing growth temperature. The full-width at half-maximum (FWHM) of c-InN (002) rocking curve is about 50 arcmin. Low temperature photoluminescence measurements reveal a band gap of about 0.61eV for cubic InN.

1998 ◽  
Vol 512 ◽  
Author(s):  
E. C. Piquette ◽  
P. M. Bridger ◽  
Z. Z. Bandić ◽  
T. C. Mcgill

ABSTRACTGaN, AlGaN, AIN were grown on (0001) A1203 substrates by MBE using a RF plasma source and employing an AIN buffer layer. The films were characterized by RHEED, AFM, and x-ray diffraction, and electrical properties were measured by Hall technique. RHEED observations indicate that the polarity of the films is likely predominantly N-face, although Ga-face inversion domains can be observed in some films by AFM. Symmetric x-ray rocking curve widths as low as 39 arcseconds are achieved for some layers, while asymmetric peaks show widths of 240–300 arcsec. Control of Si doping over a wide range is demonstrated, which is important for design of high power device structures. Gold Schottky barrier m-v-n+diodes were fabricated which achieve high reverse electric fields before edge breakdown.


Author(s):  
W. Z. Chang ◽  
D. B. Wittry

Since Du Mond and Kirkpatrick first discussed the principle of a bent crystal spectrograph in 1930, curved single crystals have been widely utilized as spectrometric monochromators as well as diffractors for focusing x rays diverging from a point. Curved crystal diffraction theory predicts that the diffraction parameters - the rocking curve width w, and the peak reflection coefficient r of curved crystals will certainly deviate from those of their flat form. Due to a lack of curved crystal parameter data in current literature and the need for optimizing the choice of diffraction geometry and crystal materials for various applications, we have continued the investigation of our technique presented at the last conference. In the present abstract, we describe a more rigorous and quantitative procedure for measuring the parameters of curved crystals.The diffraction image of a singly bent crystal under study can be obtained by using the Johann geometry with an x-ray point source.


2008 ◽  
Vol 59 (9) ◽  
Author(s):  
Violeta Vasilache ◽  
Gheorghe Gutt ◽  
Traian Vasilache

The electrochemical deposition of zinc and combinations with elements of the 8th group of the Periodic System (nickel, cobalt, iron) have good properties for anticorrosive protection, compared with pure zinc. For steel pieces, these films delay apparition and formation of white and red iron oxide. We used solutions with different concentrations of zinc chloride, nickel chloride and potassium chloride. To analyze the results we used the optic microscope and the X-ray diffraction.


Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 832
Author(s):  
Edna X. Figueroa-Rosales ◽  
Javier Martínez-Juárez ◽  
Esmeralda García-Díaz ◽  
Daniel Hernández-Cruz ◽  
Sergio A. Sabinas-Hernández ◽  
...  

Hydroxyapatite (HAp) and hydroxyapatite/multi-walled carbon nanotube (MWCNT) composites were obtained by the co-precipitation method, followed by ultrasound-assisted and microwave radiation and thermal treatment at 250 °C. X-ray diffraction (XRD) confirmed the presence of a hexagonal phase in all the samples, while Fourier-transform infrared (FTIR) spectroscopy elucidated the interaction between HAp and MWCNTs. The photoluminescent technique revealed that HAp and the composite with non-functionalized MWCNTs present a blue luminescence, while the composite with functionalized MWCNTs, under UV-vis radiation shows an intense white emission. These findings allowed presentation of a proposal for the use of HAp and HAp with functionalized MWCNTs as potential materials for optoelectronic and medical applications.


Materials ◽  
2021 ◽  
Vol 14 (10) ◽  
pp. 2505
Author(s):  
Catalin Panaghie ◽  
Ramona Cimpoeșu ◽  
Bogdan Istrate ◽  
Nicanor Cimpoeșu ◽  
Mihai-Adrian Bernevig ◽  
...  

Zinc biodegradable alloys attracted an increased interest in the last few years in the medical field among Mg and Fe-based materials. Knowing that the Mg element has a strengthening influence on Zn alloys, we analyze the effect of the third element, namely, Y with expected results in mechanical properties improvement. Ternary ZnMgY samples were obtained through induction melting in Argon atmosphere from high purity (Zn, Mg, and Y) materials and MgY (70/30 wt%) master alloys with different percentages of Y and keeping the same percentage of Mg (3 wt%). The corrosion resistance and microhardness of ZnMgY alloys were compared with those of pure Zn and ZnMg binary alloy. Materials were characterized using scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), linear and cyclic potentiometry, and immersion tests. All samples present generalized corrosion after immersion and electro-corrosion experiments in Dulbecco solution. The experimental results show an increase in microhardness and indentation Young Modulus following the addition of Y. The formation of YZn12 intermetallic phase elements with a more noble potential than pure Zinc is established. A correlation is obtained between the appearance of new Y phases and aggressive galvanic corrosion.


2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.


1998 ◽  
Vol 537 ◽  
Author(s):  
Nicolas Grandjean ◽  
Jean Massies ◽  
Mathieu Leroux ◽  
Marguerite Latigt ◽  
Pierre Lefebvre ◽  
...  

AbstractAIGaN/GaN quantum well (QWs) were grown on (0001) sapphire substrates by molecular beam epitaxy (MBE) using ammonia as nitrogen precursor. The Al composition in the barriers was varied between 8 and 27 % and the well thickness from 4 to 17 monolayers (MLs, 1ML = 2.59Å). X-ray diffraction (XRD) experiments are used to investigate the strain state of both the well and the barriers. The QW transition energy are measured by low temperature photoluminescence (PL). A large quantum confined Stark effect is observed leading to QW luminescence much lower than the emission line of the GaN buffer layer for well width above a certain critical thickness. The built-in electric field responsible for such a phenomenon is deduced from fit of the PL data. Its magnitude is of several hundred kV/cm and increases linearly with the Al composition.


1990 ◽  
Vol 208 ◽  
Author(s):  
Neil Loxley ◽  
D. Keith Bowen ◽  
Brian K. Tanner

ABSTRACTReplacement of the pinhole collimator on a double axis X-ray diffractometer with a device incorporating a channel-cut crystal permits the beam to be pre-conditioned in angular divergence. We examine the merits of such devices, known as channel-cut collimators (CCC's), of different materials and reflections. The experimental performance of InP 004 and Si 022 CCC's is presented.With a reference crystal on the first axis, set in the dispersive peometry with respect to the CCC, conditioning in wavelength spread is achieved. Dispersion broadening is effectively eliminated and no resetting of the reference crystal is required when changing specimen materials or reflections. The devices have extremely low background and reduced Bragg tails. Application of the 4-reflection CCC to rocking curve analysis of thin epitaxial layers, ultra-low angle scattering from biological systems, grazing incidence reflectometry and triple axis diffraction of semi-conductors is discussed.


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