Preparation and Time Resolved Photoluminescence of Nanoscale InP Islands in In0.48Ga0.52P

1995 ◽  
Vol 379 ◽  
Author(s):  
K. Eberl ◽  
A. Kurtenbach ◽  
K. HÄusler ◽  
F. Noll ◽  
W.W. RÜhle
Keyword(s):  
Lattice Mismatch ◽  
Excitation Power ◽  
Buffer Layers ◽  
Time Resolved ◽  
Force Microscopy ◽  
Self Assembling ◽  
Atomic Force ◽  
Transmission Electron ◽  
Decay Times ◽  
Time Resolved Photoluminescence

ABSTRACTNanoscale InP islands are formed during InP/In0 48Ga0.52P heteroepitaxy due to the lattice mismatch of about 3.7%. The samples are prepared by solid source molecular beam epitaxy on (001) GaAs substrate. Atomic force microscopy measurements show that the size of the islands is typically 15 to 50 nm in diameter and about 5 to 10 nm high depending on the nominally deposited InP layer thickness, which is between 1 and 7.5 monolayers. Transmission electron micrographs show the coherent incorporation into the In0.48Ga0.52P matrix for InP islands with 2.5 monolayers. Resonantly excited time-resolved photoluminescence (PL) measurements of the self assembling InP dots are performed for optical characterisation. The decay times are typically 400 ps. The dependence on excitation power and temperature indicates the quantum dot nature of the InP islands. Finally a pronounced alignment of the InP islands is obtained on strained In0.61Ga0.39P buffer layers.

Anisotropic Behaviour of Surface Roughening in Lattice Mismatched Heteroepitaxial Thin Films

1996 ◽  
Vol 436 ◽  
Author(s):  
Cengiz S. Ozkan ◽  
William D. Nix ◽  
Huajian Gao
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Lattice Mismatch ◽  
Surface Roughening ◽  
Silicon Substrates ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Annealing Experiments

AbstractHeteroepitaxial Si1-xGex. thin films deposited on silicon substrates exhibit surface roughening via surface diffusion under the effect of a compressive stress which is caused by a lattice mismatch. In these films, surface roughening can take place in the form of ridges which can be aligned along <100> or <110> directions, depending on the film thickness. In this paper, we investigate this anisotropic dependence of surface roughening and present an analysis of it. We have studied the surface roughening behaviour of 18% Ge and 22% Ge thin films subjected to controlled annealing experiments. Transmission electron microscopy and atomic force microscopy have been used to study the morphology and microstructure of the surface ridges and the dislocations that form during annealing.

Growth of heteroepitaxial GaSb thin films on Si(100) substrates

2004 ◽  
Vol 19 (8) ◽  
pp. 2315-2321 ◽  
Author(s):  
Thang Nguyen ◽  
Walter Varhue ◽  
Edward Adams ◽  
Mark Lavoie ◽  
Stephen Mongeon
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Lattice Mismatch ◽  
Stacking Faults ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Radio Frequency Sputtering ◽  
Atomic Force ◽  
Transmission Electron

The heteroepitaxial growth of GaSb thin films on Si(100) and GaAs(100) substrates is presented. The growth technique involves the use of atomic Ga and Sb species, which are provided by thermal effusion and radio frequency sputtering, respectively. The crystalline quality of the heteroepitaxial GaSb film on the Si substrate is high despite the larger lattice mismatch. Epitaxial quality is determined by high-resolution x-ray diffraction and Rutherford backscatter spectrometry channeling. Atomic-force microscopy is used to monitor the evolution of surface morphology with increasing film thickness. Transmission electron microscopy shows the formation of stacking faults at the Si/GaSb interface and their eventual annihilation with increasing GaSb film thickness. Annihilation of stacking faults occurs when two next-neighbor mounds meet during the overgrowth of a common adjacent mound.

Surface Morphology of SiGe Epitaxial Layers Grown on Uniquely Oriented Si Substrates

2000 ◽  
Vol 648 ◽  
Author(s):  
Morgan E. Ware ◽  
Robert J. Nemanich
Keyword(s):  
Surface Morphology ◽  
Lattice Mismatch ◽  
Morphological Structure ◽  
Epitaxial Layers ◽  
Misfit Dislocations ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Relationship Of

AbstractThe 4% lattice mismatch between Si and Ge creates strain in epitaxial layers of SiGe alloys on Si, and this strain can manifest itself in the morphological structure of the surface of the epitaxial layer. This study explores the relationship of the evolution of the surface morphology of SiGe layers grown on a range of Si surface orientations. We have grown thin, strained and thick, relaxed layers of Si0.7Ge0.3 by solid source molecular beam epitaxy on substrates with surface normals rotated from [001] towards [111] by angles of θ = (0, 2, 4, 10, 22) degrees. The surface morphology was investigated by atomic force microscopy, which showed considerable ordering of surface features on relaxed samples. These features evolve from hut-like structures at 0 degrees to large mesa-like structures separated by pits and crevices at 22 degrees. The organization of these features is also shown to vary with the substrate orientation. Each surface has characteristic directions along which features are aligned, and these directions vary continuously with the angle of rotation of the substrate. Transmission electron microscopy confirmed that misfit dislocations had formed along those same directions. The state of relaxation of each layer is quantified by Raman spectroscopy in order to make a direct correlation between residual strain and surface morphology.

MORPHOLOGICAL CONTROL OF GaN BUFFER LAYERS GROWN BY MOLECULAR BEAM EPITAXY ON 6H–SiC(0001)

2000 ◽  
Vol 07 (05n06) ◽  
pp. 565-570 ◽  
Author(s):  
CHANGWU HU ◽  
DAVID J. SMITH ◽  
R. B. DOAK ◽  
I. S. T. TSONG
Keyword(s):  
Electron Microscopy ◽  
Substrate Surface ◽  
Supersonic Jet ◽  
Flux Ratio ◽  
Buffer Layers ◽  
Cross Sectional ◽  
Growth Ratio ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

The growth of GaN buffer layers of thickness 10–25 nm directly on 6H–SiC (0001) substrates was studied using low energy electron microscopy, atomic force microscopy and cross-sectional transmission electron microscopy. The Ga flux was supplied by an evaporative source, while the NH3 flux came from a seeded beam supersonic jet source. By monitoring the growth in situ and by suitably adjusting the Ga/NH 3 flux ratio, smooth basal-plane-oriented GaN layers were grown on hydrogen-etched SiC substrates at temperatures in the range of 600–700°C. The growth proceeds via nucleation of small flat islands at the step edges of the 6H–SiC (0001) substrate surface. The islands increase in size with a lateral-to-vertical growth ratio of ~10 and eventually coalesce into a quasicontinuous layer. A highly defective substrate surface was found to be detrimental to the growth of flat buffer layers.

Morphology and Optical Properties of ZnO Nanorods Grown by Catalyst-assisted Vapor Transport on Various Substrates

2006 ◽  
Vol 963 ◽  
Author(s):  
Vitaliy Avrutin ◽  
Umit Ozgur ◽  
Natalia Izyumskaya ◽  
Serguei Chevtchenko ◽  
Jacob Leach ◽  
...  
Keyword(s):  
Optical Properties ◽  
Substrate Surface ◽  
Zno Nanorods ◽  
Stimulated Emission ◽  
Conductive Atomic Force Microscopy ◽  
Vapor Phase Transport ◽  
Time Resolved ◽  
Force Microscopy ◽  
Atomic Force ◽  
Time Resolved Photoluminescence

ABSTRACTZnO nanorods were grown by catalyst-assisted vapor phase transport on Si(001), GaN(0001)/c-Al2O3, and bulk ZnO(0001) substrates. Morphology studies showed that ZnO nanorods grew mostly perpendicularly to the GaN substrate surface, whereas a more random directional distribution was found for nanorods on Si. Optical properties of fabricated nanorods were studied by steady-state photoluminescence and time-resolved photoluminescence. Stimulated emission was observed from ZnO nanorods on GaN substrates. Raman spectroscopy revealed biaxial strain in the nanorod samples grown on Si. Conductive atomic force microscopy was applied to study I-V spectra of individual nanorods.

Dislocation reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy

2002 ◽  
Vol 722 ◽  
Author(s):  
David J. Smith ◽  
Daming Huang ◽  
Michael A Reshchikov ◽  
Feng Yun ◽  
T. King ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Aln Buffer

AbstractWe have investigated a novel approach for improving GaN crystal quality by utilizing a stack of quantum dots (QDs) in GaN grown on sapphire substrates by molecular beam epitaxy. The GaN films were grown on GaN/AlN buffer layers containing multiple QDs and characterized using x-ray diffraction, photoluminescence, atomic force microscopy, and transmission electron microscopy. The density of the dislocations in the films was determined by defect delineation wet chemical etching and atomic force microscopy. It was found that the insertion of a set of multiple GaN QD layers in the buffer layer effectively reduced the density of the dislocations in the epitaxial layers. As compared to a density of ∼1010cm-2in typical GaN films grown on AlN buffer layers, a density of ∼3×107cm-2was demonstrated in GaN films grown with the QD layers. Transmission electron microscopy observations confirmed termination of threading dislocations by the QD layers.

scholarly journals The effect of periodic silane burst on the properties of GaN on Si (111) substrates

2004 ◽  
Vol 831 ◽  
Author(s):  
K. Y. Zang ◽  
S. J. Chua ◽  
C. V. Thompson ◽  
L. S. Wang ◽  
S. Tripathy ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Gan On Si ◽  
Aln Buffer

ABSTRACTThe periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN layers led to growth of GaN films with decreased tensile stresses and decreased threading dislocation densities, as well as films with improved quality as indicated by x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, and transmission electron microscopy. The possible mechanism of the reduction of tensile stress and the dislocation density is discussed in the paper.

Combinatorial Approach to Materials Fabrication from Higher Hierarchies of Rosette Nanotubes

2007 ◽  
Vol 1057 ◽  
Author(s):  
Grigory Tikhomirov ◽  
Hicham Fenniri
Keyword(s):  
Electron Microscopy ◽  
Self Assembly ◽  
The Self ◽  
Combinatorial Approach ◽  
X Ray ◽  
Force Microscopy ◽  
Rosette Nanotubes ◽  
Self Assembling ◽  
Atomic Force ◽  
Transmission Electron

ABSTRACTThe self-assembly of six self-complimentary Guanine – Cytosine hybrid heterocycles bearing hydrophobic substituents has been studied using combinatorial approach in eight solvents under different conditions. The parameters that were varied include: the structure of the self-assembling module, its concentration, the solvent, temperature, and time of self-assembly. scanning electron microscopy (SEM) was used as a screening tool. A wide variety of interesting morphologies was found. The most interesting structures were studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), dynamic light scattering (DLS), and X-ray powder diffraction (XRD).

Synthesis of Anisotropic, Amphiphilic Grafted Multi-Star Polymers and Investigation of their Self-Assembling Characteristics

2014 ◽  
Vol 67 (1) ◽  
pp. 49 ◽  
Author(s):  
Anton Blencowe ◽  
Jing Fung Tan ◽  
Tor Kit Goh ◽  
Kenneth N. Goldie ◽  
Xuehua Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Star Polymers ◽  
The Self ◽  
Force Microscopy ◽  
Self Assembling ◽  
Atomic Force ◽  
Transmission Electron ◽  
Radical Polymerisation

Herein, we report the synthesis of amphiphilic multi-star architectures consisting of discrete poly(methacrylic acid)-based core cross-linked star polymers joined together by polystyrene-grafted linear connectors by a combination of atom transfer radical polymerisation of protected macroinitiator precursors and a copper-catalysed azide-alkyne cycloaddition grafting-to approach. The anisotropic multi-star architectures, which were obtained as individual di- and tri-star polymers with segregated hydrophobic and hydrophilic domains, undergo aggregation in apolar solvents resulting in the formation of large nanometre-scale vesicles. The self-assembling behaviour of these large amphiphilic multi-star polymers (Mw = 869–1097 kDa) was studied using dynamic light scattering, transmission electron microscopy, and atomic force microscopy.

Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing

2015 ◽  
Vol 821-823 ◽  
pp. 297-302 ◽  
Author(s):  
Marko J. Tadjer ◽  
Nadeemullah A. Mahadik ◽  
Boris N. Feigelson ◽  
Robert E. Stahlbush ◽  
Eugene A. Imhoff ◽  
...  
Keyword(s):  
Basal Plane ◽  
Carrier Lifetime ◽  
Base Temperature ◽  
Rapid Thermal Anneal ◽  
Time Resolved ◽  
Force Microscopy ◽  
Atomic Force ◽  
Photoluminescence Decay ◽  
Before And After ◽  
Time Resolved Photoluminescence

Elimination of basal plane dislocations (BPDs) in epitaxial 4H-SiC is demonstrated via a novel pulsed annealing technique in a moderate N2overpressure of 0.55 MPa. BPD removal in 15 µm thick epitaxial 4H-SiC was confirmed using ultraviolet photoluminescence (UVPL) imaging before and after the annealing process. The samples were capped with a carbon cap, introduced into the annealing chamber, and brought up to a base temperature (TBASE) of around 1550 °C for the pulsed anneal. The multicycle rapid thermal anneal (MRTA) was then performed in the TBASE:TMAXrange, where TMAX= 1875 °C was the peak temperature reached by the annealing cycles. Post-anneal surface quality and carrier lifetime were characterized by atomic force microscopy and time-resolved photoluminescence decay.

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