Epitaxial Growth of SrTiO3 Thin Films on TiN/Si Substrates Using RF Sputtering

2006 ◽  
Vol 966 ◽  
Author(s):  
Chun Wang ◽  
Mark H Kryder
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Electron Diffraction Pattern ◽  
Rf Sputtering ◽  
Epitaxial Relationship ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTEpitaxial SrTiO3 (001) thin films with a TiN template layer have been deposited on Si(001) single crystal substrates by RF sputtering. The deposited SrTiO3 films show a surface with roughness of 0.66nm. The orientation relationship was determined to be SrTiO3(001)[110]∥TiN(001)[110]∥Si(001)[110]. The microstructure and interface of the multilayer was studied using high resolution transmission electron microscopy (TEM). The electron diffraction pattern confirmed the epitaxial relationship between each layer.

scholarly journals Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins

2009 ◽  
Vol 42 (2) ◽  
pp. 242-252 ◽  
Author(s):  
Cyril Cayron ◽  
Martien Den Hertog ◽  
Laurence Latu-Romain ◽  
Céline Mouchet ◽  
Christopher Secouard ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Silicon Nanowires ◽  
Si Nanowires ◽  
Silicon Thin Films ◽  
Transmission Electron ◽  
Diffraction Patterns

Odd electron diffraction patterns (EDPs) have been obtained by transmission electron microscopy (TEM) on silicon nanowires grownviathe vapour–liquid–solid method and on silicon thin films deposited by electron beam evaporation. Many explanations have been given in the past, without consensus among the scientific community: size artifacts, twinning artifacts or, more widely accepted, the existence of new hexagonal Si phases. In order to resolve this issue, the microstructures of Si nanowires and Si thin films have been characterized by TEM, high-resolution transmission electron microscopy (HRTEM) and high-resolution scanning transmission electron microscopy. Despite the differences in the geometries and elaboration processes, the EDPs of the materials show great similarities. The different hypotheses reported in the literature have been investigated. It was found that the positions of the diffraction spots in the EDPs could be reproduced by simulating a hexagonal structure withc/a= 12(2/3)1/2, but the intensities in many EDPs remained unexplained. Finally, it was established that all the experimental data,i.e.EDPs and HRTEM images, agree with a classical cubic silicon structure containing two microstructural defects: (i) overlapping Σ3 microtwins which induce extra spots by double diffraction, and (ii) nanotwins which induce extra spots as a result of streaking effects. It is concluded that there is no hexagonal phase in the Si nanowires and the Si thin films presented in this work.

Studies on Epitaxial Relationship and Interface Structure of AlN/Si(111) and GaN/Si(111) Heterostructures

2002 ◽  
Vol 743 ◽  
Author(s):  
T. A. Rawdanowicz ◽  
H. Wang ◽  
A. Kvit ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Epitaxial Growth ◽  
Interface Structure ◽  
Zone Axis ◽  
Epitaxial Relationship ◽  
Growth Interface ◽  
Transmission Electron

ABSTRACTWe present the details of epitaxial growth interface structure of single wurtzite AlN thin films on (111) Si substrates by laser-molecular-beam-epitaxy. High quality AlN thin films with atomically sharp interfaces can be obtained by Laser-MBE at a substrate temperature of 650 ±10°C. X-ray diffraction and high resolution transmission electron microscopy was used to study the details of epitaxial growth of AlN on Si(111) substrate. The orientation-relationship of AlN on Si(111) was studied from Si <110> and <112> zone axis and determined to be AlN [2110]|Si[110] and AlN [0110]|Si[211]. The atomic structure of the interface was studied by high-resolution transmission electron microscopy and Fourier filtered image of cross-sectional AlN/Si(111) samples from both Si<110> and <112> zone axis. The results revealed the domain matching epitaxy of 4:5 ratio between the interplanar distances of Si(110) and AlN [2110]. We also present similarities and differences between the growth mechanism of AlN/Si(111) and GaN/Si(111) heterostructures.

Transmission Electron Microscopy studies of texture of Cr underlayer of magnetic recording hard disk

1991 ◽  
Vol 49 ◽  
pp. 580-581
Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Magnetic Recording ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Substrate Bias ◽  
Epitaxial Relationship ◽  
Transmission Electron

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.

HRTEM Investigation of Precipitates in Al-Zn-In-Mg-Ti-Ce Anode Alloy

2011 ◽  
Vol 189-193 ◽  
pp. 1036-1039
Author(s):  
Jing Ling Ma ◽  
Jiu Ba Wen ◽  
Yan Fu Yan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Hexagonal Structure ◽  
Orientation Relation ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Scanning Electron

The precipitates of Al-5Zn-0.02In-1Mg-0.05Ti-0.5Ce (wt %) anode alloy were studied by scanning electron microscopy, X-ray microanalysis, high resolution transmission electron microscopy and selected area electron diffraction analyses in the present work. The results show that the alloy mainly contains hexagonal structure MgZn2 and tetragonal structure Al2CeZn2 precipitates. From high resolution transmission electron microscopy and selected area electron diffraction, aluminium, Al2CeZn2 and MgZn2 phases have [0 1 -1]Al|| [1 -10]Al2CeZn2|| [-1 1 0 1]MgZn2orientation relation, and Al2CeZn2 and MgZn2 phases have the [0 2 -1]Al2CeZn2|| [0 1 -10]MgZn2orientation relation.

Microstructure of Bonding Interface in Explosively Welded Metal/Ceramic Clad

2010 ◽  
Vol 638-642 ◽  
pp. 3775-3780 ◽  
Author(s):  
Seiichiro Ii ◽  
Chihiro Iwamoto ◽  
Shinobu Satonaka ◽  
Kazuyuki Hokamoto ◽  
Masahiro Fujita
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Nitride ◽  
Electron Diffraction ◽  
Electron Diffraction Pattern ◽  
Explosive Welding ◽  
Bonding Interface ◽  
X Ray ◽  
Transmission Electron ◽  
Metal Ceramic

Bonding interface in aluminum (Al) and silicon nitride (Si3N4) clad fabricated by explosive welding has been investigated by transmission electron microscopy (TEM). The nanocrystalline region was clearly observed at the interface between Al and Si3N4. Electron diffraction pattern and energy dispersive X-ray spectroscopy (EDS) measurements across the interface revealed that this nanocrystalline region consist of the only aluminum.

The Dodecagonal Quasicrystalline Telluride (Ta, V)1.6Te And Its Crystalline Approximant (TaV)97Te60

1998 ◽  
Vol 553 ◽  
Author(s):  
C. Reich ◽  
M. Conrad ◽  
F. Krumeich ◽  
B. Harbrecht
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Single Crystal ◽  
Edge Length ◽  
X Ray ◽  
Transmission Electron ◽  
The Impact

AbstractThe dodecagonal (dd) quasicrystalline tantalum telluride dd Ta1.6Te and the crystalline approximant Ta97Te60 have been modified by partly replacing tantalum by vanadium. The impact of the substitution on the structures has been studied by X-ray and electron diffraction and by high-resolution transmission electron microscopy. The layered-type approximant structure of Ta83V14Te60 was determined by single crystal X-ray means. The partitioning of vanadium on 21 out of 29 crystallographically inequivalent metal sites is referred to, but not controlled by the Dirichlet domain volume available at the sites. A HRTEM projection of dd (Ta, V)1.6Te onto the dodecagonal plane is analysed with respect to the arrangement of (Ta, V)151Te74 clusters on the vertices of an irregular aperiodic square-triangle tiling, the edge length of which corresponds to the distance between the centres of two such clusters. The clusters comprise about 1 nm thick corrugated lamellae which are periodically stacked by weak Te-Te interactions.

Polytypoids in high Tc thallium based superconducting materials

1990 ◽  
Vol 5 (8) ◽  
pp. 1620-1624
Author(s):  
A. K. Singh ◽  
M. A. Imam ◽  
K. Sadananda ◽  
S. B. Qadri ◽  
E. F. Skelton ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Electron Diffraction Pattern ◽  
Stacking Faults ◽  
Superconducting Materials ◽  
Superconducting Properties ◽  
High Tc ◽  
Transmission Electron

Several high Tc compounds containing Tl (thallium) were prepared starting from different initial compositions. Superconducting properties and the structure were determined for each sample. Electron diffraction and transmission electron microscopy showed the existence of polytypic high Tc compounds with the same a- and b-axes but different c-axis values. The c-axis appears to increase approximately in integral multiples of 0.15 nm with varying composition and is associated with the insertion of Cu–Ca or Cu–Tl layers in each unit cell. Several random stacking faults were also noted, which give rise to diffuse streaking in the electron diffraction pattern.

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