Low Temperature High Quality Growth of Silicon-Dioxide Using Oxygenation of Hydrogenation-Assisted Nano-Structured Silicon Thin Films

2007 ◽  
Vol 989 ◽  
Author(s):  
Nima Rouhi ◽  
Behzad Esfandyarpour ◽  
Shams Mohajerzadeh ◽  
Pouya Hashemi ◽  
Bahman Hekmat-Shoar ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Oxidation Process ◽  
Oxide Semiconductor ◽  
Silicon Substrates ◽  
High Quality ◽  
Silicon Thin Films ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mos Structures

AbstractWe report a low temperature high quality oxide growth of nano-structured silicon thin films on silicon substrates obtained through a hydrogenation-assisted PECVD technique followed by a plasma enhanced oxidation process. The deposited layers were investigated and compared with respect to their electrical, optical and stoichiometrical properties by means of Ellipsometry, Rutherford backscattering (RBS), Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, and by current voltage and capacitance voltage measurements on metal-oxide-semiconductor (MOS) structures.

A novel route for the synthesis of Sr1−xBaxNb2O6 thin films

1995 ◽  
Vol 10 (10) ◽  
pp. 2404-2407 ◽  
Author(s):  
A. Kashani ◽  
M.S. Tomar ◽  
E. Dayalan
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Precursor Solution ◽  
Crystalline Material ◽  
Silicon Substrates ◽  
Silicon Structure ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Niobium Ethoxide

Stoichiometric Sr1−xBaxNb2O6 (SBN) powder and thin films were prepared by a chemical method. The starting materials were niobium ethoxide and the hydroxides of strontium and barium. Powders were obtained by evaporation of the precursor solution, and thin films were deposited by spin coating. Annealing temperature required to obtain complete conversion to the crystalline material was about 700 °C. Stoichiometric polycrystalline films of Sr1−xBaxNb2O6 were deposited on quartz and silicon substrates. Leakage current-voltage and the capacitance-voltage measurements on a metal/SBN/n-silicon structure show a diode-type characteristic.

Capacitance-Voltage, Current Voltage, and Thermal Stability of Copper Alloyed With Aluminum or Magnesium

1998 ◽  
Vol 514 ◽  
Author(s):  
T. Suwwan de Felipe ◽  
S. P. Murarka ◽  
S. Bedell ◽  
W. A. Lanford
Keyword(s):  
Thermal Treatment ◽  
Integrated Circuits ◽  
Pure Copper ◽  
Oxide Semiconductor ◽  
Silicon Substrates ◽  
Current Voltage ◽  
Resistance To Oxidation ◽  
Silicon Integrated Circuits ◽  
Capacitance Voltage ◽  
Copper Aluminum

ABSTRACTCopper alloyed with small amounts of aluminum or magnesium has recently been suggested as a promising material for interconnect applications in silicon integrated circuits. This work reports the results of the investigation of the electrical (capacitance-voltage and current-voltage) stability of the metal-oxide-semiconductor capacitor made with copper-0.5 at. % aluminum and copper-2 at. % magnesium as metal, deposited on thermally oxidized silicon substrates. Effect of thermal treatment in vacuum ambient before and/or during the electrical testing was investigated. The resistance to oxidation of these alloys was also investigated. The results show that copper magnesium, after a thermal treatment of 350°C or higher, produces a passivating layer at the interfaces that has excellent corrosion resistance and very stable behavior in terms of capacitance-voltage and current-voltage measurements. Copper aluminum performed adequately, much better than pure copper but was inferior to copper magnesium.

Comparison of Low Temperature Methods for the Production of Silicon Dioxide Thin Films.

1987 ◽  
Vol 105 ◽  
Author(s):  
Stephen D. Baker ◽  
W. I. Milne ◽  
S. Taylor
Keyword(s):  
Thin Films ◽  
Nitrous Oxide ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Spectroscopic Techniques ◽  
Interface Properties ◽  
Film Properties ◽  
Low Temperature Annealing ◽  
Current Voltage ◽  
Capacitance Voltage

AbstractIn this paper we present a comparison of the physical and electrical properties of high quality insulating thin films of silicon dioxide produced at low temperatures by three methods; standard plasma enhanced CVD of silane/nitrous oxide, photo enhanced CVD of silane/nitrous oxide using a novel internal nitrogen discharge lamp, and oxygen plasma anodisation.The electrical and interface properties of the films, obtained from current-voltage and capacitance-voltage measurements are compared. The physical properties and composition of the films have been investigated by standard methods such as ellipsometry and p-etch rate, and spectroscopic techniques such as Auger, XPS, LIMA and Infrared absorption. The results of these investigations are reported.The effects of low temperature annealing on the film properties have been examined and the suitability of each of the fabrication techniques to a variety of applications is discussed.

Modification mechanisms of silicon thin films in low-temperature hydrogen plasmas

2018 ◽  
Vol 52 (5) ◽  
pp. 055204 ◽  
Author(s):  
V Martirosyan ◽  
O Joubert ◽  
E Despiau-Pujo
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Silicon Thin Films ◽  
Hydrogen Plasmas

scholarly journals Effect of Halogen on the Structure of Low Temperature Polycrystalline Silicon Thin Films Fabricated on Glass Substrates.

1999 ◽  
Vol 107 (1251) ◽  
pp. 1099-1104 ◽  
Author(s):  
Toshio KAMIYA ◽  
Yoshiteru MAEDA ◽  
Kouichi NAKAHATA ◽  
Takashi KOMARU ◽  
Charles M. FORTMANN ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Glass Substrates ◽  
Silicon Thin Films

scholarly journals Low temperature epitaxial growth of boron-doped silicon thin films

2018 ◽  
Author(s):  
Marta Chrostowski ◽  
Rafaël Peyronnet ◽  
Wanghua Chen ◽  
Nicolas Vaissiere ◽  
José Alvarez ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Silicon Thin Films ◽  
Boron Doped ◽  
Doped Silicon

Nano-crystalline silicon thin films grown by the inductively coupled plasma assisted CFUBM at low temperature

2010 ◽  
Vol 205 ◽  
pp. S227-S230 ◽  
Author(s):  
Kyung S. Shin ◽  
Yoon S. Choi ◽  
In S. Choi ◽  
Y. Setsuhara ◽  
Jeon G. Han
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Inductively Coupled Plasma ◽  
Crystalline Silicon ◽  
Inductively Coupled ◽  
Silicon Thin Films ◽  
Nano Crystalline
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