Light emitting diodes on glass and silicon substrates fabricated using novel low temperature hydrogenation-assisted nano-crystallization of silicon thin films

Author(s):  
B. Fallah-Azad ◽  
Y. Abdi ◽  
S. Mohajerzadeh ◽  
M. Jamei ◽  
P. Hashemi ◽  
...  
2005 ◽  
Vol 87 (8) ◽  
pp. 083504 ◽  
Author(s):  
X. L. Zhu ◽  
J. X. Sun ◽  
H. J. Peng ◽  
Z. G. Meng ◽  
M. Wong ◽  
...  

2007 ◽  
Vol 989 ◽  
Author(s):  
Nima Rouhi ◽  
Behzad Esfandyarpour ◽  
Shams Mohajerzadeh ◽  
Pouya Hashemi ◽  
Bahman Hekmat-Shoar ◽  
...  

AbstractWe report a low temperature high quality oxide growth of nano-structured silicon thin films on silicon substrates obtained through a hydrogenation-assisted PECVD technique followed by a plasma enhanced oxidation process. The deposited layers were investigated and compared with respect to their electrical, optical and stoichiometrical properties by means of Ellipsometry, Rutherford backscattering (RBS), Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, and by current voltage and capacitance voltage measurements on metal-oxide-semiconductor (MOS) structures.


1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.


Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Yiyue Zhang ◽  
Masoumeh Keshavarz ◽  
Elke Debroye ◽  
Eduard Fron ◽  
Miriam Candelaria Rodríguez González ◽  
...  

Abstract Lead halide perovskites have attracted tremendous attention in photovoltaics due to their impressive optoelectronic properties. However, the poor stability of perovskite-based devices remains a bottleneck for further commercial development. Two-dimensional perovskites have great potential in optoelectronic devices, as they are much more stable than their three-dimensional counterparts and rapidly catching up in performance. Herein, we demonstrate high-quality two-dimensional novel perovskite thin films with alternating cations in the interlayer space. This innovative perovskite provides highly stable semiconductor thin films for efficient near-infrared light-emitting diodes (LEDs). Highly efficient LEDs with tunable emission wavelengths from 680 to 770 nm along with excellent operational stability are demonstrated by varying the thickness of the interlayer spacer cation. Furthermore, the best-performing device exhibits an external quantum efficiency of 3.4% at a high current density (J) of 249 mA/cm2 and remains above 2.5% for a J up to 720 mA cm−2, leading to a high radiance of 77.5 W/Sr m2 when driven at 6 V. The same device also shows impressive operational stability, retaining almost 80% of its initial performance after operating at 20 mA/cm2 for 350 min. This work provides fundamental evidence that this novel alternating interlayer cation 2D perovskite can be a promising and stable photonic emitter.


2021 ◽  
pp. 2101419
Author(s):  
Ping Liu ◽  
Wanqing Cai ◽  
Cong Zhao ◽  
Siwei Zhang ◽  
Pengbo Nie ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27464-27472 ◽  
Author(s):  
Jingling Li ◽  
Qiling Guo ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehua Xu ◽  
...  

In this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated.


2015 ◽  
Vol 3 (36) ◽  
pp. 9327-9336 ◽  
Author(s):  
R. L. Z. Hoye ◽  
K. P. Musselman ◽  
M. R. Chua ◽  
A. Sadhanala ◽  
R. D. Raninga ◽  
...  

Efficient and bright blue polyfluorene LEDs, processed entirely below 150 °C, are obtained using an atmospherically synthesized, tunable oxide electron-injector.


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