Newly Developed Abrasive-free Copper CMP Slurry Based on Electrochemical Analysis

2007 ◽  
Vol 991 ◽  
Author(s):  
Jin Amanokura ◽  
Katsumi Mabuchi ◽  
Takafumi Sakurada ◽  
Yutaka Nomura ◽  
Masanobu Habiro ◽  
...  
Keyword(s):  
Removal Rate ◽  
Electrochemical Analysis ◽  
Disk Electrode ◽  
Copper Cmp ◽  
High Removal Rate ◽  
Cu Cmp

ABSTRACTIn order to reduce microscratches and obtain minimized dishing and erosion, we have developed new abrasive-free Cu CMP slurries. During the development of these slurries, some electrochemical examination was performed. The most effective knowledge was obtained through the analysis using rotary Cu disk electrode under pressure. On the basis of these studies, new abrasive-free Cu CMP slurries with a high removal rate and excellent planarity were designed and developed. The mechanism of reducing dishing and erosion was also discussed.

Development of “New Abrasive-Free Copper CMP Solutions” BASED on Electrochemical and Film Analysis Method

2002 ◽  
Vol 732 ◽  
Author(s):  
Jin Amanokura ◽  
Yasuo Kamigata ◽  
Masanobu Habiro ◽  
Hiroshi Suzuki ◽  
Masanobu Hanazono
Keyword(s):  
Removal Rate ◽  
Analysis Method ◽  
Film Analysis ◽  
Cu Complex ◽  
Erosion Properties ◽  
Copper Cmp ◽  
Cu Cmp ◽  
Complex Film

AbstractAbrasive-free Cu CMP solutions have been developed to reduce micro-scratches and obtain minimized dishing and erosion properties. During the development of the solutions, some electrochemical examinations were performed. One of the most instructive knowledge was obtained through the Tafel plot. Other attractive data were obtained through Cu complex film analysis. On the basis of these studies were developed and released newly formulated abrasive-free Cu CMP solutions with a high Cu removal rate and excellent topography performance. Mechanism of polishing by applying abrasive-free Cu CMP solutions is also discussed in this paper.

Ultra-High Removal Rate Copper CMP Slurry Development for 3D Application

2019 ◽  
Vol 18 (1) ◽  
pp. 479-484 ◽  
Author(s):  
Bin Hu ◽  
H. Kim ◽  
R. Wen ◽  
Deepak Mahulikar
Keyword(s):  
Removal Rate ◽  
Copper Cmp ◽  
High Removal Rate

Interaction between abrasive particles and film surfaces in low down force Cu CMP

2004 ◽  
Vol 816 ◽  
Author(s):  
Yuchun Wang ◽  
Isaac Zomora ◽  
Joe Hawkins ◽  
Renjie Zhou ◽  
Fred Sun ◽  
...  
Keyword(s):  
Surface Finish ◽  
Removal Rate ◽  
Film Formation ◽  
Abrasive Particles ◽  
High Removal Rate ◽  
Performance Results ◽  
Cu Cmp ◽  
Copper Passivation

A robust copper slurry should have high removal rate, efficient planarization, optimal over polishing window and fast clearing without corrosion. These requirements were addressed in the choice of abrasive particles, film formation for copper passivation, selectivity of copper to barrier, and interactions between particles and film surfaces. The performance results of low dishing erosion and surface finish are discussed with the proposed mechanism.

High Removal Rate CMP Process on TSV Thick Cu Overburden

2010 ◽  
Vol 1249 ◽  
Author(s):  
Raymond Caramto ◽  
Jamal Qureshi ◽  
Jerry Mase
Keyword(s):  
Cross Sections ◽  
Removal Rate ◽  
Aspect Ratios ◽  
Overburden Thickness ◽  
Cu Electroplating ◽  
Constant Resistance ◽  
3D Packaging ◽  
High Removal Rate ◽  
Silicon Vias ◽  
Cu Cmp

AbstractIn 3D packaging, Through Silicon Vias (TSVs) with high aspect ratios and depths measuring tens of microns are filled by advanced Cu electroplating processes. Today's 300mm TSV plating platforms are intended to produce bottom-up via fill, no seam voids, and minimal, controlled overburden. To achieve this, the preceding Cu-seed coverage must be continuous at a constant resistance, and the plating chemistries optimized. However, other factors such as hardware configurations and simple depletion of the plating formulations during the extended TSV process can lead to high Cu overburden thickness requiring a high removal rate (HRR) chemical-mechanical polish (CMP) process to remove the thick Cu layer.Presented here are CMP results of a thick Cu overburden (~6um) resulting from the fill of 5 x 25um TSVs on 300mm wafers. The goal is to uniformly polish the overburden and utilize the tool's endpoint system at Cu clear before the next step of conventional barrier CMP. Slurries were screened for removal rate, uniformity, planarization ability, and defectivity. This study focuses on achieving a removal rate of >2.5um/min through evaluation of several commercial slurries in a multi-step polish application. Cross-sections post-plating show the Cu overburden, barrier and liner layer. Cross-sections post-CMP quantify Cu recess, dielectric loss, and presence/absence of seam defects. The process selected is demonstrated to achieve good planarization results with low occurrence of polish defects, at a rate and selectivity suitable for emerging 3D TSV Cu CMP applications.

Copper CMP for Dual Damascene Technology: Some Considerations on the Mechanism of Cu Removal

2001 ◽  
Vol 671 ◽  
Author(s):  
David Wei ◽  
Yehiel Gotkis ◽  
Hugh Li ◽  
Stephen Jew ◽  
Joseph Li ◽  
...  
Keyword(s):  
Oxygen Atom ◽  
Removal Rate ◽  
Wafer Surface ◽  
H2o2 Concentration ◽  
Passivation Film ◽  
Mechanical Removal ◽  
Slurry System ◽  
High Removal Rate ◽  
Cu Cmp ◽  
Passivating Oxide

ABSTRACTIt was found in a Cu-CMP process using EP-C 5001 slurry and IC 1000 pad that Cu removal rate, being extremely low without H2O2 in the slurry, increases up to a maximum with the addition of H2O2, and then decreases again. Analysis of polarization curves and Eh-pH diagrams shows that without H2O2 Cu has the lowest electric potential, as a result, the highest thermodynamic stability in the Cu/slurry system. Addition of H2O2 shifts the potential up and induces the formation of Cu2O, resulting in a high removal rate. At high H2O2 concentration, a CuO passivation film is formed. In this case, only mechanical removal of the passivating oxide film allows the process to proceed. It is speculated that the moving pad surface adheres the oxidized species via the formation of hydrogen bonds with oxygen atoms of copper oxide molecules, thus detaching them from the wafer surface. Each oxygen atom is capable of pulling out two Cu atoms if Cu2O is formed on the surface and only one Cu atom if CuO is formed. This would explain why the removal rate is high at low H2O2 concentration and low at high H2O2 concentration.

Issues and Challenges of Chemical Mechanical Polishing for Nano-scale Memory Manufacturing

2009 ◽  
Vol 1157 ◽  
Author(s):  
Choon Kun Ryu ◽  
Jonghan Shin ◽  
Hyungsoon Park ◽  
Nohjung Kwak ◽  
Kwon Hong ◽  
...  
Keyword(s):  
Vertical Integration ◽  
Removal Rate ◽  
Memory Device ◽  
Design Rule ◽  
Integration Scheme ◽  
New Materials ◽  
Degree Of Control ◽  
High Removal Rate ◽  
Cu Cmp ◽  
Nano Size

AbstractAs the design rule of memory devices is scaled down to nanoscale, the number of the CMP process has increased considerably due to the complexity of integration scheme. The CMP for isolation has increased significantly because the isolation process of metal contact plugs and damascene metallization at nanoscale has been successfully enabled by the CMP. The CMP selectivity, which depends strongly on the chemistry of the slurry, must be tuned for the various new materials. Recently, in order to get over the limitation in lateral shrinkage of the memory device, several emerging applications have been investigated extensively. A vertical integration needs the new CMP process such as high removal rate Cu CMP. Next generation memories need the CMP process for new materials such as GeSbTe, conductive oxide, and magnetic materials. Since any nano-size scratch will be a killer defect at the nanoscale memory, both the CMP equipment and the consumables must be maintained with tighter degree of control specifications.

Derivation of Optimum Study Factors for Samples Contaminated with Cd Using Electric/Magnetic Field and ORP

2013 ◽  
Vol 813 ◽  
pp. 519-524
Author(s):  
Sang An Ha ◽  
Jei Pil Wang
Keyword(s):  
Magnetic Field ◽  
Heavy Metals ◽  
Removal Rate ◽  
Underground Water ◽  
Liquid Electrode ◽  
Oxidation Reduction ◽  
Oxidation Reduction Potential ◽  
Removal Of Heavy Metals ◽  
High Removal Rate ◽  
Membrane Treatment

A purpose of the present study is to derive optimum study factors for removal of heavy metals using combined alternating current electric/magnetic field and electric membranes for the area contaminated with heavy metals in soil or underground water. ORP (Oxidation Reduction Potential) analysis was conducted to determine an intensity of tendency for oxidation or reduction of the samples contaminated with heavy metals, and electrical membrane treatment was used with adjustment of concentrations and voltages of liquid electrode (Na2SO4) to derive a high removal rate. Removal constants were analyzed to be 0.0417, 0.119, 0.1594 when the voltages were 5V, 10V, 15V, respectively, and treatment efficiency was shown to increase as the liquid electrode concentration was increased. Keywords: heavy metals, electric/magnetic field, ORP, electrical membrane

scholarly journals Fundamental Mechanisms of Copper CMP – Passivation Kinetics of Copper in CMP Slurry Constituents

2009 ◽  
Vol 1157 ◽  
Author(s):  
Shantanu Tripathi ◽  
Fiona M. Doyle ◽  
David A. Dornfeld
Keyword(s):  
Electrochemical Impedance ◽  
Protective Film ◽  
Current Decay ◽  
Glycine Solution ◽  
Current Densities ◽  
Circuit Elements ◽  
Copper Cmp ◽  
Cu Cmp ◽  
Kinetics Of ◽  
Capacitive Charging

AbstractDuring copper CMP, abrasives and asperities interact with the copper at the nano-scale, partially removing protective films. The local Cu oxidation rate increases, then decays with time as the protective film reforms. In order to estimate the copper removal rate and other Cu-CMP output parameters with a mechanistic model, the passivation kinetics of Cu, i.e. the decay of the oxidation current with time after an abrasive/copper interaction, are needed. For the first time in studying Cu-CMP, microelectrodes were used to reduce interference from capacitive charging, IR drops and low diffusion limited currents, problems typical with traditional macroelectrodes. Electrochemical impedance spectroscopy (EIS) was used to obtain the equivalent circuit elements associated with different electrochemical phenomena (capacitive, kinetics, diffusion etc.) at different polarization potentials. These circuit elements were used to interpret potential-step chronoamperometry results in inhibiting and passivating solutions, notably to distinguish between capacitive charging and Faradaic currents.Chronoamperometry of Cu in acidic aqueous glycine solution containing the corrosion inhibitor benzotriazole (BTA) displayed a very consistent current decay behavior at all potentials, indicating that the rate of current decay was controlled by diffusion of BTA to the surface. In basic aqueous glycine solution, Cu (which undergoes passivation by a mechanism similar to that operating in weakly acidic hydrogen peroxide slurries) displayed similar chronoamperometric behavior for the first second or so at all anodic potentials. Thereafter, the current densities at active potentials settled to values around those expected from polarization curves, whereas the current densities at passive potentials continued to decline. Oxidized Cu species typically formed at ‘active’ potentials were found to cause significant current decay at active potentials and at passive potentials before more protective passive films form. This was established from galvanostatic experiments.

Numerical Prediction of Contaminant Removal from Cavity in Horizontal Channel by Constrained Interpolated Profile Method

2014 ◽  
Vol 695 ◽  
pp. 384-388
Author(s):  
Nor Azwadi Che Sidik ◽  
A.S. Ahmad Sofianuddin ◽  
K.Y. Ahmat Rajab
Keyword(s):  
Reynolds Number ◽  
Aspect Ratio ◽  
Removal Rate ◽  
Contaminant Removal ◽  
Square Cavity ◽  
Profile Method ◽  
Aspect Ratios ◽  
Contaminants Removal ◽  
Parabolic Flow ◽  
High Removal Rate

In this paper, Constrained Interpolated Profile Method (CIP) was used to simulate contaminants removal from square cavity in channel flow. Predictions were conducted for the range of aspect ratios from 0.25 to 4.0. The inlet parabolic flow with various Reynolds number from 50 to 1000 was used for the whole presentation with the same properties of contaminants and fluid. The obtained results indicated that the percentage of removal increased at high aspect ratio of cavity and higher Reynolds number of flow but it shows more significant changes as increasing aspect ratio rather than increasing Reynolds number. High removal rate was found at the beginning of the removal process.

High removal rate MRF[TM]

2021 ◽  
Author(s):  
William Messner ◽  
Christopher A. Hall
Keyword(s):  
Removal Rate ◽  
High Removal Rate
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