Interaction between abrasive particles and film surfaces in low down force Cu CMP

2004 ◽  
Vol 816 ◽  
Author(s):  
Yuchun Wang ◽  
Isaac Zomora ◽  
Joe Hawkins ◽  
Renjie Zhou ◽  
Fred Sun ◽  
...  
Keyword(s):  
Surface Finish ◽  
Removal Rate ◽  
Film Formation ◽  
Abrasive Particles ◽  
High Removal Rate ◽  
Performance Results ◽  
Cu Cmp ◽  
Copper Passivation

A robust copper slurry should have high removal rate, efficient planarization, optimal over polishing window and fast clearing without corrosion. These requirements were addressed in the choice of abrasive particles, film formation for copper passivation, selectivity of copper to barrier, and interactions between particles and film surfaces. The performance results of low dishing erosion and surface finish are discussed with the proposed mechanism.

Parametric Optimization of Magnetic Abrasive Finishing Using Adhesive Magnetic Abrasive Particles

2019 ◽  
Vol 7 (2) ◽  
pp. 34-47
Author(s):  
Palwinder Singh ◽  
Lakhvir Singh ◽  
Arishu Kaushik
Keyword(s):  
Surface Finish ◽  
Medical Equipment ◽  
Material Removal ◽  
Parametric Optimization ◽  
Removal Rate ◽  
Improvement Rate ◽  
Magnetic Abrasive Finishing ◽  
Abrasive Particles ◽  
Abrasive Finishing ◽  
Depth Analysis

A very precise surface finish is desirable in manufacturing semiconductors, medical equipment, and aerospace parts. The examinations on magnetic abrasive finishing (MAF) processes are being done for the modern industry. This newly developed process is serving the industry to achieve the desired level of precision and surface finish. This research represents the MAF of aluminum pipes using adhesive magnetic abrasive particles. The different process parameters were optimized using the Response Surface Methodology (RSM) method to gain an in-depth analysis of surface roughness in terms of roughness improvement rate (RIR), and material removal rate (MRR). The achieved maximum RIR and MRR was 81.49% and 2.74mg/min, respectively. The finished workpieces were microscopically investigated by scanning electron microscopy (SEM) to further study the mechanism of MAF process.

Effect of Corrosion Inhibitor (BTA) in Citric Acid based Slurry on Cu CMP

2005 ◽  
Vol 867 ◽  
Author(s):  
In-Kwon Kim ◽  
Young-Jae Kang ◽  
Yi-Koan Hong ◽  
Jin-Goo Park
Keyword(s):  
Etch Rate ◽  
Removal Rate ◽  
Passivation Layer ◽  
Chemical Dissolution ◽  
H2o2 Concentration ◽  
Removal Rates ◽  
Abrasive Particles ◽  
Mechanical Abrasion ◽  
Abrasion Rate ◽  
Cu Cmp

AbstractIn this study, the effect of BTA on polishing behavior was investigated as functions of H2O2, slurry pH and abrasive particles. The addition of BTA effectively prevented Cu from etching by forming the passivation layer of Cu-BTA regardless of pH and H2O2 concentration in slurry. A thinner passivation layer was grown on Cu in BTA added slurry solutions with a higher contact angle of 60°. The dynamic etch rate, the removal rate with abrasive free slurry, also decreased when BTA was added in slurry at pH 2, 4 and 6. The removal rate of Cu was strongly dependent on types of abrasive particles in slurry. The larger hardness of slurry abrasive particles, the higher removal rates of Cu. The reduction of removal rates in BTA added slurry was determined by the competition between chemical dissolution rate and mechanical abrasion rate.

Modified Abrasives based on fumed SiO2 and Al2O3 for the Cu CMP Process

2004 ◽  
Vol 816 ◽  
Author(s):  
D. Zeidler ◽  
J.W. Bartha ◽  
W.L ortz ◽  
R. Brandes
Keyword(s):  
Surface Quality ◽  
High Selectivity ◽  
Removal Rate ◽  
New Method ◽  
Copper Removal ◽  
Complexing Agent ◽  
Abrasive Particles ◽  
Cu Cmp ◽  
Low Rate ◽  
Fumed Sio2

AbstractNew abrasive particles based on SiO2 and Al2O3 were produced with different coating and doping. Seven specifically designed particles were dispersed to prepare slurries for Cu CMP. Glycin was used as complexing agent and hydrogenperoxid as oxidizer. The experimentally obtained removal rate, selectivity, surface quality and planarisation ability, demonstrate a significant impact of the different abrasives tested. SiO2 particles covered with Al2O3 increased the removal rate for Cu. In comparison to this behavior, a low rate for TaN proved a high selectivity copper removal required by the Cu CMP process. A new method for the planarisation length monitoring (step polish response) shows also significant differences in planarisation length (PL) by the polish of copper with slurries composed of these new particles.

The Adsorption Behaviors of Citric Acid on Abrasive Particles in Cu CMP Slurry

2005 ◽  
Vol 867 ◽  
Author(s):  
Young-Jae Kang ◽  
Yi-Koan Hong ◽  
Jae-Hoon Song ◽  
In-Kwon Kim ◽  
Jin-Goo Park
Keyword(s):  
Citric Acid ◽  
Friction Force ◽  
Adhesion Force ◽  
Removal Rate ◽  
Friction Forces ◽  
Abrasive Particles ◽  
Ph Values ◽  
Adsorption Behaviors ◽  
Cu Cmp ◽  
Citrate Ions

AbstractThe interaction between Cu surface and abrasive particles in slurry solution was characterized. The adsorption behavior of the citrate ions was dependent on the pH of the slurry and the concentration of the citric acid. The adsorption of citrate ions generated a highly negative charge on the alumina surface and shifted isoelectric point (IEP) to lower pH values. The Cu removal rate of alumina slurry was higher than that of colloidal silica based slurry in the investigated pH ranges. Although lower friction forces of Cu were observed in alumina based slurry of pH 4, 6 and 8, a higher friction force was observed at pH 2. This high friction force was attributed to the positive zeta potential and greater adhesion force of particle. It indicates that the magnitudes of particle adhesions on Cu surfaces in slurries can be directly related to the frictional behavior during CMP process.

Newly Developed Abrasive-free Copper CMP Slurry Based on Electrochemical Analysis

2007 ◽  
Vol 991 ◽  
Author(s):  
Jin Amanokura ◽  
Katsumi Mabuchi ◽  
Takafumi Sakurada ◽  
Yutaka Nomura ◽  
Masanobu Habiro ◽  
...  
Keyword(s):  
Removal Rate ◽  
Electrochemical Analysis ◽  
Disk Electrode ◽  
Copper Cmp ◽  
High Removal Rate ◽  
Cu Cmp

ABSTRACTIn order to reduce microscratches and obtain minimized dishing and erosion, we have developed new abrasive-free Cu CMP slurries. During the development of these slurries, some electrochemical examination was performed. The most effective knowledge was obtained through the analysis using rotary Cu disk electrode under pressure. On the basis of these studies, new abrasive-free Cu CMP slurries with a high removal rate and excellent planarity were designed and developed. The mechanism of reducing dishing and erosion was also discussed.

High Removal Rate CMP Process on TSV Thick Cu Overburden

2010 ◽  
Vol 1249 ◽  
Author(s):  
Raymond Caramto ◽  
Jamal Qureshi ◽  
Jerry Mase
Keyword(s):  
Cross Sections ◽  
Removal Rate ◽  
Aspect Ratios ◽  
Overburden Thickness ◽  
Cu Electroplating ◽  
Constant Resistance ◽  
3D Packaging ◽  
High Removal Rate ◽  
Silicon Vias ◽  
Cu Cmp

AbstractIn 3D packaging, Through Silicon Vias (TSVs) with high aspect ratios and depths measuring tens of microns are filled by advanced Cu electroplating processes. Today's 300mm TSV plating platforms are intended to produce bottom-up via fill, no seam voids, and minimal, controlled overburden. To achieve this, the preceding Cu-seed coverage must be continuous at a constant resistance, and the plating chemistries optimized. However, other factors such as hardware configurations and simple depletion of the plating formulations during the extended TSV process can lead to high Cu overburden thickness requiring a high removal rate (HRR) chemical-mechanical polish (CMP) process to remove the thick Cu layer.Presented here are CMP results of a thick Cu overburden (~6um) resulting from the fill of 5 x 25um TSVs on 300mm wafers. The goal is to uniformly polish the overburden and utilize the tool's endpoint system at Cu clear before the next step of conventional barrier CMP. Slurries were screened for removal rate, uniformity, planarization ability, and defectivity. This study focuses on achieving a removal rate of >2.5um/min through evaluation of several commercial slurries in a multi-step polish application. Cross-sections post-plating show the Cu overburden, barrier and liner layer. Cross-sections post-CMP quantify Cu recess, dielectric loss, and presence/absence of seam defects. The process selected is demonstrated to achieve good planarization results with low occurrence of polish defects, at a rate and selectivity suitable for emerging 3D TSV Cu CMP applications.

Copper CMP for Dual Damascene Technology: Some Considerations on the Mechanism of Cu Removal

2001 ◽  
Vol 671 ◽  
Author(s):  
David Wei ◽  
Yehiel Gotkis ◽  
Hugh Li ◽  
Stephen Jew ◽  
Joseph Li ◽  
...  
Keyword(s):  
Oxygen Atom ◽  
Removal Rate ◽  
Wafer Surface ◽  
H2o2 Concentration ◽  
Passivation Film ◽  
Mechanical Removal ◽  
Slurry System ◽  
High Removal Rate ◽  
Cu Cmp ◽  
Passivating Oxide

ABSTRACTIt was found in a Cu-CMP process using EP-C 5001 slurry and IC 1000 pad that Cu removal rate, being extremely low without H2O2 in the slurry, increases up to a maximum with the addition of H2O2, and then decreases again. Analysis of polarization curves and Eh-pH diagrams shows that without H2O2 Cu has the lowest electric potential, as a result, the highest thermodynamic stability in the Cu/slurry system. Addition of H2O2 shifts the potential up and induces the formation of Cu2O, resulting in a high removal rate. At high H2O2 concentration, a CuO passivation film is formed. In this case, only mechanical removal of the passivating oxide film allows the process to proceed. It is speculated that the moving pad surface adheres the oxidized species via the formation of hydrogen bonds with oxygen atoms of copper oxide molecules, thus detaching them from the wafer surface. Each oxygen atom is capable of pulling out two Cu atoms if Cu2O is formed on the surface and only one Cu atom if CuO is formed. This would explain why the removal rate is high at low H2O2 concentration and low at high H2O2 concentration.

Issues and Challenges of Chemical Mechanical Polishing for Nano-scale Memory Manufacturing

2009 ◽  
Vol 1157 ◽  
Author(s):  
Choon Kun Ryu ◽  
Jonghan Shin ◽  
Hyungsoon Park ◽  
Nohjung Kwak ◽  
Kwon Hong ◽  
...  
Keyword(s):  
Vertical Integration ◽  
Removal Rate ◽  
Memory Device ◽  
Design Rule ◽  
Integration Scheme ◽  
New Materials ◽  
Degree Of Control ◽  
High Removal Rate ◽  
Cu Cmp ◽  
Nano Size

AbstractAs the design rule of memory devices is scaled down to nanoscale, the number of the CMP process has increased considerably due to the complexity of integration scheme. The CMP for isolation has increased significantly because the isolation process of metal contact plugs and damascene metallization at nanoscale has been successfully enabled by the CMP. The CMP selectivity, which depends strongly on the chemistry of the slurry, must be tuned for the various new materials. Recently, in order to get over the limitation in lateral shrinkage of the memory device, several emerging applications have been investigated extensively. A vertical integration needs the new CMP process such as high removal rate Cu CMP. Next generation memories need the CMP process for new materials such as GeSbTe, conductive oxide, and magnetic materials. Since any nano-size scratch will be a killer defect at the nanoscale memory, both the CMP equipment and the consumables must be maintained with tighter degree of control specifications.

Derivation of Optimum Study Factors for Samples Contaminated with Cd Using Electric/Magnetic Field and ORP

2013 ◽  
Vol 813 ◽  
pp. 519-524
Author(s):  
Sang An Ha ◽  
Jei Pil Wang
Keyword(s):  
Magnetic Field ◽  
Heavy Metals ◽  
Removal Rate ◽  
Underground Water ◽  
Liquid Electrode ◽  
Oxidation Reduction ◽  
Oxidation Reduction Potential ◽  
Removal Of Heavy Metals ◽  
High Removal Rate ◽  
Membrane Treatment

A purpose of the present study is to derive optimum study factors for removal of heavy metals using combined alternating current electric/magnetic field and electric membranes for the area contaminated with heavy metals in soil or underground water. ORP (Oxidation Reduction Potential) analysis was conducted to determine an intensity of tendency for oxidation or reduction of the samples contaminated with heavy metals, and electrical membrane treatment was used with adjustment of concentrations and voltages of liquid electrode (Na2SO4) to derive a high removal rate. Removal constants were analyzed to be 0.0417, 0.119, 0.1594 when the voltages were 5V, 10V, 15V, respectively, and treatment efficiency was shown to increase as the liquid electrode concentration was increased. Keywords: heavy metals, electric/magnetic field, ORP, electrical membrane

Numerical Prediction of Contaminant Removal from Cavity in Horizontal Channel by Constrained Interpolated Profile Method

2014 ◽  
Vol 695 ◽  
pp. 384-388
Author(s):  
Nor Azwadi Che Sidik ◽  
A.S. Ahmad Sofianuddin ◽  
K.Y. Ahmat Rajab
Keyword(s):  
Reynolds Number ◽  
Aspect Ratio ◽  
Removal Rate ◽  
Contaminant Removal ◽  
Square Cavity ◽  
Profile Method ◽  
Aspect Ratios ◽  
Contaminants Removal ◽  
Parabolic Flow ◽  
High Removal Rate

In this paper, Constrained Interpolated Profile Method (CIP) was used to simulate contaminants removal from square cavity in channel flow. Predictions were conducted for the range of aspect ratios from 0.25 to 4.0. The inlet parabolic flow with various Reynolds number from 50 to 1000 was used for the whole presentation with the same properties of contaminants and fluid. The obtained results indicated that the percentage of removal increased at high aspect ratio of cavity and higher Reynolds number of flow but it shows more significant changes as increasing aspect ratio rather than increasing Reynolds number. High removal rate was found at the beginning of the removal process.

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