Development of “New Abrasive-Free Copper CMP Solutions” BASED on Electrochemical and Film Analysis Method

2002 ◽  
Vol 732 ◽  
Author(s):  
Jin Amanokura ◽  
Yasuo Kamigata ◽  
Masanobu Habiro ◽  
Hiroshi Suzuki ◽  
Masanobu Hanazono
Keyword(s):  
Removal Rate ◽  
Analysis Method ◽  
Film Analysis ◽  
Cu Complex ◽  
Erosion Properties ◽  
Copper Cmp ◽  
Cu Cmp ◽  
Complex Film

AbstractAbrasive-free Cu CMP solutions have been developed to reduce micro-scratches and obtain minimized dishing and erosion properties. During the development of the solutions, some electrochemical examinations were performed. One of the most instructive knowledge was obtained through the Tafel plot. Other attractive data were obtained through Cu complex film analysis. On the basis of these studies were developed and released newly formulated abrasive-free Cu CMP solutions with a high Cu removal rate and excellent topography performance. Mechanism of polishing by applying abrasive-free Cu CMP solutions is also discussed in this paper.

Newly Developed Abrasive-free Copper CMP Slurry Based on Electrochemical Analysis

2007 ◽  
Vol 991 ◽  
Author(s):  
Jin Amanokura ◽  
Katsumi Mabuchi ◽  
Takafumi Sakurada ◽  
Yutaka Nomura ◽  
Masanobu Habiro ◽  
...  
Keyword(s):  
Removal Rate ◽  
Electrochemical Analysis ◽  
Disk Electrode ◽  
Copper Cmp ◽  
High Removal Rate ◽  
Cu Cmp

ABSTRACTIn order to reduce microscratches and obtain minimized dishing and erosion, we have developed new abrasive-free Cu CMP slurries. During the development of these slurries, some electrochemical examination was performed. The most effective knowledge was obtained through the analysis using rotary Cu disk electrode under pressure. On the basis of these studies, new abrasive-free Cu CMP slurries with a high removal rate and excellent planarity were designed and developed. The mechanism of reducing dishing and erosion was also discussed.

scholarly journals Fundamental Mechanisms of Copper CMP – Passivation Kinetics of Copper in CMP Slurry Constituents

2009 ◽  
Vol 1157 ◽  
Author(s):  
Shantanu Tripathi ◽  
Fiona M. Doyle ◽  
David A. Dornfeld
Keyword(s):  
Electrochemical Impedance ◽  
Protective Film ◽  
Current Decay ◽  
Glycine Solution ◽  
Current Densities ◽  
Circuit Elements ◽  
Copper Cmp ◽  
Cu Cmp ◽  
Kinetics Of ◽  
Capacitive Charging

AbstractDuring copper CMP, abrasives and asperities interact with the copper at the nano-scale, partially removing protective films. The local Cu oxidation rate increases, then decays with time as the protective film reforms. In order to estimate the copper removal rate and other Cu-CMP output parameters with a mechanistic model, the passivation kinetics of Cu, i.e. the decay of the oxidation current with time after an abrasive/copper interaction, are needed. For the first time in studying Cu-CMP, microelectrodes were used to reduce interference from capacitive charging, IR drops and low diffusion limited currents, problems typical with traditional macroelectrodes. Electrochemical impedance spectroscopy (EIS) was used to obtain the equivalent circuit elements associated with different electrochemical phenomena (capacitive, kinetics, diffusion etc.) at different polarization potentials. These circuit elements were used to interpret potential-step chronoamperometry results in inhibiting and passivating solutions, notably to distinguish between capacitive charging and Faradaic currents.Chronoamperometry of Cu in acidic aqueous glycine solution containing the corrosion inhibitor benzotriazole (BTA) displayed a very consistent current decay behavior at all potentials, indicating that the rate of current decay was controlled by diffusion of BTA to the surface. In basic aqueous glycine solution, Cu (which undergoes passivation by a mechanism similar to that operating in weakly acidic hydrogen peroxide slurries) displayed similar chronoamperometric behavior for the first second or so at all anodic potentials. Thereafter, the current densities at active potentials settled to values around those expected from polarization curves, whereas the current densities at passive potentials continued to decline. Oxidized Cu species typically formed at ‘active’ potentials were found to cause significant current decay at active potentials and at passive potentials before more protective passive films form. This was established from galvanostatic experiments.

scholarly journals Multi Performance Optimizationof Shoulder Milling Process Parameters of AA6063 T6 Aluminium Alloy by Taguchi Based GRA

2019 ◽  
Vol 8 (10S) ◽  
pp. 420-425
Keyword(s):  
Process Parameters ◽  
Grey Relational Analysis ◽  
Removal Rate ◽  
Analysis Data ◽  
Milling Process ◽  
Depth Of Cut ◽  
Analysis Method ◽  
Relational Analysis ◽  
Grey Relational Grade ◽  
Grey Relational

In this paper, a grey relational analysis method based on Taguchi is proposed to improve the multi-performance characteristics of VMC shoulder milling process parameters in the processing of AA6063 T6. Taking into account four process parameters such as coolant, depth of cut,speed and feed, there are three level of each process parameter in addition to two levels of coolant. 18 experiments were used by L18 orthogonal array using the taguchi method. Multi-performance features like surface roughness and material removal rate are used. Grey Relational Analysis method is used to obtain the Grey Relational Grade, and the multiperformance characteristics of the process are pointed out. Then, the Taguchi response table method and ANOVA are used to analysis data. In order to ensure the validity of the test results, a confirmation test was conducted. The study also shows that this method can effectively improve the multi-function characteristics of shoulder milling process.In his work microstructure and mechanical properties of AA6063 T6before and after shoulder milling have been investigated.

Study on the planarization behaviour of copper CMP utilizing a dense pattern and a global step

2005 ◽  
Vol 867 ◽  
Author(s):  
Tilo Bormann ◽  
Johann W. Bartha
Keyword(s):  
Removal Rate ◽  
Specific Pattern ◽  
Constant Density ◽  
Large Area ◽  
Before And After ◽  
Contour Evolution ◽  
Copper Cmp ◽  
To Come ◽  
Dense Pattern

AbstractThe major aim of CMP is not the removal of excess material but the planarization of the surface. Therefore the determination of the planarization length appears to be more important than the removal rate itself. It has been shown, that the planarization length is not a constant process parameter, but is related to the removal respectively to the polish time in a square root behaviour. Founded on models proposed by Boning, Ouma, et. al. we applied a sequential polish on a single quasi infinite step. The resulting profile could be simulated by a sequential convolution of the surface contour with a Gaussian transfer function.To come closer to the situation on a chip pattern we investigated the planarization behaviour on a specific pattern of the MIT854AZ copper CMP test chip, where a large area of unpatterned surface touches a pattern with a specific constant density.The 200 mm wafer samples consisted of RIE structured oxide films covered with 850 nm ECD copper. The polish was performed on a standard semiconductor manufacturing tool, using a commercial consumables set. The surface profiles were determined by a high resolution profiler within the polishing sequence. The densely patterned areas are removed within a certain polishing time while the transition point between the unpatterned and patterned area appears as a global step. The deposited copper thickness is sufficient to study the contour evolution in both phases, before and after removal of the dense pattern. The paper presents the experimental results on the contour evolution for the patterned fields as well as the global step.

Effect of Corrosion Inhibitor (BTA) in Citric Acid based Slurry on Cu CMP

2005 ◽  
Vol 867 ◽  
Author(s):  
In-Kwon Kim ◽  
Young-Jae Kang ◽  
Yi-Koan Hong ◽  
Jin-Goo Park
Keyword(s):  
Etch Rate ◽  
Removal Rate ◽  
Passivation Layer ◽  
Chemical Dissolution ◽  
H2o2 Concentration ◽  
Removal Rates ◽  
Abrasive Particles ◽  
Mechanical Abrasion ◽  
Abrasion Rate ◽  
Cu Cmp

AbstractIn this study, the effect of BTA on polishing behavior was investigated as functions of H2O2, slurry pH and abrasive particles. The addition of BTA effectively prevented Cu from etching by forming the passivation layer of Cu-BTA regardless of pH and H2O2 concentration in slurry. A thinner passivation layer was grown on Cu in BTA added slurry solutions with a higher contact angle of 60°. The dynamic etch rate, the removal rate with abrasive free slurry, also decreased when BTA was added in slurry at pH 2, 4 and 6. The removal rate of Cu was strongly dependent on types of abrasive particles in slurry. The larger hardness of slurry abrasive particles, the higher removal rates of Cu. The reduction of removal rates in BTA added slurry was determined by the competition between chemical dissolution rate and mechanical abrasion rate.

Modified Abrasives based on fumed SiO2 and Al2O3 for the Cu CMP Process

2004 ◽  
Vol 816 ◽  
Author(s):  
D. Zeidler ◽  
J.W. Bartha ◽  
W.L ortz ◽  
R. Brandes
Keyword(s):  
Surface Quality ◽  
High Selectivity ◽  
Removal Rate ◽  
New Method ◽  
Copper Removal ◽  
Complexing Agent ◽  
Abrasive Particles ◽  
Cu Cmp ◽  
Low Rate ◽  
Fumed Sio2

AbstractNew abrasive particles based on SiO2 and Al2O3 were produced with different coating and doping. Seven specifically designed particles were dispersed to prepare slurries for Cu CMP. Glycin was used as complexing agent and hydrogenperoxid as oxidizer. The experimentally obtained removal rate, selectivity, surface quality and planarisation ability, demonstrate a significant impact of the different abrasives tested. SiO2 particles covered with Al2O3 increased the removal rate for Cu. In comparison to this behavior, a low rate for TaN proved a high selectivity copper removal required by the Cu CMP process. A new method for the planarisation length monitoring (step polish response) shows also significant differences in planarisation length (PL) by the polish of copper with slurries composed of these new particles.

Ultra-High Removal Rate Copper CMP Slurry Development for 3D Application

2019 ◽  
Vol 18 (1) ◽  
pp. 479-484 ◽  
Author(s):  
Bin Hu ◽  
H. Kim ◽  
R. Wen ◽  
Deepak Mahulikar
Keyword(s):  
Removal Rate ◽  
Copper Cmp ◽  
High Removal Rate

scholarly journals Integrated Tribo-Chemical Modeling of Copper CMP

2009 ◽  
Vol 1157 ◽  
Author(s):  
Shantanu Tripathi ◽  
Seungchoun Choi ◽  
Fiona M. Doyle ◽  
David A. Dornfeld
Keyword(s):  
Material Removal ◽  
Mechanical Response ◽  
Removal Rate ◽  
Chemical Model ◽  
Chemical Modeling ◽  
Wear Process ◽  
Local Oxidation ◽  
Copper Cmp ◽  
Underlying Mechanisms ◽  
Electrochemical Phenomena

AbstractCopper CMP is a corrosion-wear process, in which mechanical and chemical-electrochemical phenomena interact synergistically. Existing models generally treat copper CMP as a corrosion enhanced wear process. However, the underlying mechanisms suggest that copper CMP would be better modeled as a wear enhanced corrosion process, where intermittent asperity/abrasive action enhances the local oxidation rate, and is followed by time-dependent passivation of copper. In this work an integrated tribo-chemical model of material removal at the asperity/abrasive scale was developed. Abrasive and pad properties, process parameters, and slurry chemistry are all considered. Three important components of this model are the passivation kinetics of copper in CMP slurry chemicals; the mechanical response of protective films on copper; and the interaction frequency of copper with abrasives/pad asperities. The material removal rate during copper CMP was simulated using the tribo-chemical model, using input parameters obtained experimentally in accompanying research or from the literature.

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