Nitrogen and Carbon Solute Redistribution During High Fluence Nitrogen Implantation into Iron

1988 ◽  
Vol 100 ◽  
Author(s):  
P. D. Ehni ◽  
I. L. Singer ◽  
S. M. Hues
Keyword(s):  
Mass Spectroscopy ◽  
Iron Nitrides ◽  
High Fluence ◽  
Solute Redistribution ◽  
Nitrogen Implantation ◽  
Depth Profiles ◽  
High Fluences ◽  
Distribution Studies ◽  
Lattice Dilation ◽  
Secondary Ion

ABSTRACTModel solute distribution studies have been performed in N-implanted Fe. Concentration-verses-depth profiles have been determined by secondary ion mass spectroscopy for Fe implanted to low fluences with isotopes 13C at 190keV and 15N at 180keV followed by 14N to high fluences. At N fluences greater than 2.5 × 1017 /cm2 dramatic changes in the 13C and 15N profiles are observed. It is proposed that these changes are caused by the lattice dilation due to precipitation of iron nitrides.

Modeling of High Fluence Titanium Ion Implantation and Vacuum Carburization in Steel

1983 ◽  
Vol 27 ◽  
Author(s):  
D. Farkas ◽  
I. L. Singer ◽  
M. Rangaswamy
Keyword(s):  
Vacuum System ◽  
Time Interval ◽  
High Fluence ◽  
Saturation Point ◽  
Mixing Processes ◽  
Depth Profiles ◽  
Vacuum Carburization ◽  
Sputtering Yield ◽  
Lattice Dilation ◽  
Best Fit

ABSTRACTConcentration vs. depth profiles have been calculated for Ti and C in 52100 Ti-implanted steel. A computer formalism was developed to account for diffusion and mixing processes, as well as sputtering and lattice dilation. A Gaussian distribution of Ti was assumed to be incorporated at each time interval. The effects of sputtering and lattice dilation were then included by means of an appropriate coordinate transformation. C was assumed to be gettered from the vacuum system in a one-to-one ratio with the surface Ti concentration up to a saturation point. Both Ti and C were allowed to diffuse. A series of experimental (Auger) concentration vs. depth profiles of Ti implanted steel were analyzed using the above-mentioned assumptions. A best fit procedure for these curves yielded information on the values of the sputtering yield, range and straggling, as well as the mixing processes that occur during the implantation. The observed values are in excellent agreement with the values predicted by existing theories.

Wear Properties and Surface Structure of Ion Implanted Glassy Carbon

1988 ◽  
Vol 100 ◽  
Author(s):  
Kazuo Yoshida ◽  
Kazuhiko Okuno ◽  
Gen Katagiri ◽  
Akira Ishitani ◽  
Katsuo Takahashi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Wear Resistance ◽  
Mass Spectroscopy ◽  
Concentration Distribution ◽  
Amorphous Structure ◽  
Wear Properties ◽  
Depth Profiles ◽  
Secondary Ion ◽  
Wear Tests ◽  
Abrasive Paper

ABSTRACTWear properties of Li+, K+, C+, Cl+, and Ti+ implanted glassy carbons (GC) have been studied by wear tests using silicon carbide abrasive paper. It has been found that ion implantation is effective for improving wear resistance of GC. The measurements of Raman spectra revealed formation of an amorphous structure on the surface. Anomalous depth profiles with flat concentration distribution of Li and K atoms were observed by a secondary ion mass spectroscopy (SIMS). In conclusion. the formation of an amorphous structure seems to explain the improvement in wear resistance.

Self-catalyzed Tritium Incorporation in Amorphous and Crystalline

2010 ◽  
Vol 1245 ◽  
Author(s):  
Baojun Liu ◽  
Nazir Kherani ◽  
Kevin P Chen ◽  
Tome Kosteski ◽  
Keith Leong ◽  
...  
Keyword(s):  
Penetration Depth ◽  
Mass Spectroscopy ◽  
Crystalline Silicon ◽  
Tritium Concentration ◽  
Exposure Condition ◽  
Material Microstructure ◽  
Tritium Content ◽  
Depth Profiles ◽  
Secondary Ion ◽  
Concentration Depth Profiles

AbstractTritiated amorphous and crystalline silicon is prepared by exposing silicon samples to tritium gas (T2) at various pressures and temperatures. Total tritium content and tritium concentration depth profiles in the tritiated samples are obtained using thermal effusion and Secondary Ion Mass Spectroscopy (SIMS) measurements. The results indicate that tritium incorporation is a function of the material microstructure rather than the tritium exposure condition. The highest tritium concentration attained in the amorphous silicon is about 20 at.% on average with a penetration depth of about 50 nm. In contrast, the tritium occluded in the c-Si is about 4 at.% with a penetration depth of about 10 nm. The tritium concentration observed in a-Si:H and c-Si is higher than reported results from post-hydrogenation experiments. The beta irradiation appears to catalyze the tritiation process and enhance the tritium dissolution in silicon material.

Mapping of Elemental and Phase Composition in Air-Oxidized Ti3SiC2

2006 ◽  
Vol 45 ◽  
pp. 1091-1096
Author(s):  
It Meng Low
Keyword(s):  
Phase Composition ◽  
Synchrotron Radiation ◽  
Mass Spectroscopy ◽  
Surface Composition ◽  
Depth Profiling ◽  
Oxidation Behaviour ◽  
Surface Oxide ◽  
Depth Profiles ◽  
Synchrotron Radiation Diffraction ◽  
Secondary Ion

The oxidation behaviour of Ti3SiC2 in air is not well understood due to mixed results reported in the literature. In this study, the surface composition depth-profiles of air-oxidized Ti3SiC2 have been investigated by synchrotron radiation diffraction (SRD) and secondary ion mass spectroscopy (SIMS) in the temperature range 500-1300°C. Anatase has been observed to form at ~600°C, rutile at ~750°C and tridymite at ~1100°C. Depth-profiling results by SIMS and SRD have revealed a distinct gradation in element and phase composition respectively within the surface oxide layers.

Growth of ion implanted buried FeSi2 on Si (111) and Si (100)

1991 ◽  
Vol 235 ◽  
Author(s):  
K. Radermacher ◽  
S. Mantl ◽  
Ch. Dieker ◽  
H. Holzbrecher ◽  
W. Speier ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Mass Spectroscopy ◽  
Peak Concentration ◽  
Rutherford Backscattering Spectrometry ◽  
Dose Dependence ◽  
High Dose ◽  
Depth Profiles ◽  
Si Substrates ◽  
Ion Channeling ◽  
Secondary Ion

ABSTRACTBuried FeSi2 layers have been fabricated by 200 keV Fe+ implantations into (111) and (100) Si substrates. By varying the dose from 0.4 to 7.1017 Fe+ cm−2 the dependence of the Fe concentration on ion dose was investigated systematically. The samples were characterized by Rutherford backscattering spectrometry, He+ ion channeling and secondary ion mass spectroscopy. In the as-implanted state the Fe peak concentration increases lineary with dose up to ≈2.4.1017 Fe+ cm−2. Above this dose a redistribution of Fe atoms was observed as indicated by comparison of measured depth profiles with Monte-Carlo simulations of high dose implantations. The Fe peak concentration shows an unusual dose dependence after rapid thermal annealing (RTA) at 1150°C for 10 s. A minimum dose of (2.4±0.1)1017 Fe+ cm−2 for (111) Si and a slightly higher dose of (2.7±0.1).1017 Fe+ cm−2 for (100) Si is necessary to form continuous metallic αFeSi2 layers.

Improvement of the gas cluster ion beam-(GCIB)-based molecular secondary ion mass spectroscopy (SIMS) depth profile with O2+ cosputtering

The Analyst ◽  
2016 ◽  
Vol 141 (8) ◽  
pp. 2523-2533 ◽  
Author(s):  
Yi-Hsuan Chu ◽  
Hua-Yang Liao ◽  
Kang-Yi Lin ◽  
Hsun-Yun Chang ◽  
Wei-Lun Kao ◽  
...  
Keyword(s):  
Steady State ◽  
Depth Profile ◽  
Mass Spectroscopy ◽  
Ion Beam ◽  
Depth Profiles ◽  
Tof Sims ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
Secondary Ion ◽  
Sims Depth Profile

The Ar2500+ and O2+ cosputter in ToF-SIMS depth profiles retained >95% molecular ion intensity in the steady-state.

Diffusion of Ion Implanted Ruthenium and Osmium IN GaAs and InP

1993 ◽  
Vol 316 ◽  
Author(s):  
M. Kuttler ◽  
A. Knecht ◽  
D. Bimberg ◽  
H. Kräutle
Keyword(s):  
Structural Properties ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Diffusion Processes ◽  
Rutherford Backscattering ◽  
Uphill Diffusion ◽  
Secondary Ion Mass Spectroscopy ◽  
Depth Profiles ◽  
Annealing Procedure ◽  
Secondary Ion

ABSTRACTThe redistribution of the dopants Ru and Os implanted into GaAs and InP as well as the structural properties of the hosts are investigated in dependence of the annealing procedure. Results of Rutherford backscattering and secondary-ion-mass-spectroscopy experiments are presented. The RBS results of Os in GaAs annealed at 850°C indicate that an amount of about 1018 cm-3 Os is on substitutional sites. Two different diffusion processes are observed: an uphill diffusion in the amorphized region and a Fick-type diffusion in the tail of the depth profiles. The diffusion coefficients for Ru in GaAs at 850°C and Os in InP at 750°C are estimated to 4*10-14 cm2s-1 and 8*10-15 cm2s-1, respectively.

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