Temperature-Dependent Resistive Properties of Vanadium Pentoxide/Vanadium Multi-Layer Thin Films for Microbolometer & Antenna-Coupled Microbolometer Applications

In this study, vanadium oxide (VxOy) semiconducting resistive thermometer thin films were developed, and their temperature-dependent resistive behavior was examined. Multilayers of 5-nm-thick vanadium pentoxide (V2O5) and 5-nm-thick vanadium (V) films were alternately sputter-deposited, at room temperature, to form 105-nm-thick VxOy films, which were post-deposition annealed at 300 °C in O2 and N2 atmospheres for 30 and 40 min. The synthesized VxOy thin films were then patterned into resistive thermometer structures, and their resistance versus temperature (R-T) characteristics were measured. Samples annealed in O2 achieved temperature coefficients of resistance (TCRs) of −3.0036 and −2.4964%/K at resistivity values of 0.01477 and 0.00819 Ω·cm, respectively. Samples annealed in N2 achieved TCRs of −3.18 and −1.1181%/K at resistivity values of 0.04718 and 0.002527 Ω·cm, respectively. The developed thermometer thin films had TCR/resistivity properties suitable for microbolometer and antenna-coupled microbolometer applications. The employed multilayer synthesis technique was shown to be effective in tuning the TCR/resistivity properties of the thin films by varying the annealing conditions.

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Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

Scientific Reports ◽

10.1038/s41598-020-74887-z ◽

2020 ◽

Vol 10 (1) ◽

Author(s):

Jose Recatala-Gomez ◽

Pawan Kumar ◽

Ady Suwardi ◽

Anas Abutaha ◽

Iris Nandhakumar ◽

...

Keyword(s):

Thin Films ◽

Thermoelectric Properties ◽

Bismuth Telluride ◽

Indium Tin Oxide ◽

Seed Layer ◽

Room Temperature ◽

Low Cost ◽

Temperature Dependent ◽

Temperature Heat ◽

Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

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Characterization of the order-annealing response of nanostructured iron-palladium based ferromagnetic thin-films

MRS Proceedings ◽

10.1557/proc-703-v3.4 ◽

2001 ◽

Vol 703 ◽

Author(s):

Huiping Xu ◽

Adam T. Wise ◽

Timothy J. Klemmer ◽

Jörg M. K. Wiezorek

Keyword(s):

Thin Films ◽

Grain Growth ◽

Room Temperature ◽

Si Substrate ◽

Ferromagnetic Thin Films ◽

Precipitation Reactions ◽

Post Deposition ◽

Xrd And Tem ◽

Iron Palladium

ABSTRACTA combination of XRD and TEM techniques have been used to characterize the response of room temperature magnetron sputtered Fe-Pd thin films on Si-susbtrates to post-deposition order-annealing at temperatures between 400-500°C. Deposition produced the disordered Fe-Pd phase with (111)-twinned grains approximately 18nm in size. Ordering occurred for annealing at 450°C and 500°C after 1.8ks, accompanied by grain growth (40-70nm). The ordered FePd grains contained (111)-twins rather than {101}-twins typical of bulk ordered FePd. The metallic overlayers and underlayers selected here produced detrimental dissolution (Pt into Fe-Pd phases) and precipitation reactions between Pd and the Si substrate.

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Investigation on the Thermal and Electrical Properties of Ti-Si-O Film Formed by the Composite Sputtering Deposition

MRS Proceedings ◽

10.1557/proc-670-k4.8 ◽

2001 ◽

Vol 670 ◽

Cited By ~ 6

Author(s):

Akira Nishiyama ◽

Akio Kaneko ◽

Masato Koyama ◽

Yoshiki Kamata ◽

Ikuo Fujiwara ◽

...

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Phase Separation ◽

Nanocrystalline Film ◽

Post Deposition Annealing ◽

Current Increase ◽

Sputtering Deposition ◽

Thermal And Electrical Properties ◽

Sputter Deposited ◽

Post Deposition

ABSTRACTTi-Si-O films were sputter deposited from TiO2+SiO2 composite targets with various SiO2 content. The phase separation occurred for every SiO2 content used in this experiment (from 14% to 75%) and it has been revealed that nanocrystalline (TiO2)1-x(SiO2)x films in which anatase TiO2 forms tiny grains were obtained when x in the film is larger than 0.26. The tiny grain was effective for suppressing the thermal grooving phenomenon of the thin films by the post deposition annealing which leads to the leakage current increase. The dielectric constant of the nanocrystalline film was varied with the SiO2 content from the value of the bulk anatase to SiO2.

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Preparation of Vanadium Oxide Thin Films under Different Annealing Conditions

IOP Conference Series Materials Science and Engineering ◽

10.1088/1757-899x/381/1/012127 ◽

2018 ◽

Vol 381 ◽

pp. 012127

Author(s):

Changan He ◽

Qingguo Wang ◽

Zhaoming Qu

Keyword(s):

Thin Films ◽

Vanadium Oxide ◽

Oxide Thin Films ◽

Annealing Conditions ◽

Vanadium Oxide Thin Films

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Transport Properties of Granular Nix(SiO2)100−x Thin Films

MRS Proceedings ◽

10.1557/proc-195-129 ◽

1990 ◽

Vol 195 ◽

Cited By ~ 1

Author(s):

John R. Beamish ◽

B.M. Patterson ◽

K.M. Unruh

Keyword(s):

Thin Films ◽

Temperature Dependence ◽

Electrical Transport ◽

Low Temperatures ◽

Room Temperature ◽

Volume Percent ◽

Ni Content ◽

Resistivity Minimum ◽

Temperature Coefficient Of Resistivity ◽

Sputter Deposited

ABSTRACTWe have studied the electrical transport behavior of sputter deposited Nix(SiO2)100−x thin films between room temperature and 100 mK and, at selected temperatures, in applied magnetic fields up to 6 T. As the Ni concentration x is reduced, the resistivity increases systematically. At a Ni concentration (nominal) of about x–70 atomic percent (38 volume percent) the room temperature coefficient of resistivity changes sign. For Ni concentrations greater than 70 percent the resistance first decreases with temperature then increases logarithmically at, low temperatures. This increase becomes smaller and the resistivity minimum moves to progressively lower temperatures as the Ni concentration increases. In films with less than x–70 percent Ni, the resistivity has a temperature dependence of the form ρ(T)–ρo exp \(To/T)α] between room temperature and about 5 K. The exponent a is about 1/2 and To increases with decreasing Ni content. Below 1 K, however, the resistivity increases much less rapidly, with a temperature dependence independent of Ni concentration. In all films the magnetoresistance is small and negative.

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The effect of post-deposition annealing conditions on structural and thermoelectric properties of sputtered copper oxide films

RSC Advances ◽

10.1039/d0ra03906c ◽

2020 ◽

Vol 10 (49) ◽

pp. 29394-29401

Author(s):

Chandrasekaran Abinaya ◽

Kevin Bethke ◽

Virgil Andrei ◽

Jonas Baumann ◽

Beatrix Pollakowski-Herrmann ◽

...

Keyword(s):

Thin Films ◽

Copper Oxide ◽

Thermoelectric Properties ◽

Oxide Films ◽

Thermoelectric Performance ◽

Annealing Atmosphere ◽

Oxide Thin Films ◽

Post Deposition Annealing ◽

Annealing Conditions ◽

Post Deposition

This study reveals the interplay between the composition and thermoelectric performance of mixed copper oxide thin films, which can be finely adjusted by varying the annealing atmosphere.

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Sputter-deposited low reflectance vanadium oxide-molybdenum oxide thin films on silicon

Infrared Physics & Technology ◽

10.1016/j.infrared.2017.07.002 ◽

2017 ◽

Vol 85 ◽

pp. 273-279 ◽

Cited By ~ 3

Author(s):

Manish Kumar Nayak ◽

A. Carmel Mary Esther ◽

Parthasarathi Bera ◽

Arjun Dey

Keyword(s):

Thin Films ◽

Vanadium Oxide ◽

Molybdenum Oxide ◽

Oxide Thin Films ◽

Sputter Deposited

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Effect of O2/Ar flow ratio and post-deposition annealing on the structural, optical and electrical characteristics of SrTiO3 thin films deposited by RF sputtering at room temperature

Thin Solid Films ◽

10.1016/j.tsf.2015.07.060 ◽

2015 ◽

Vol 590 ◽

pp. 193-199 ◽

Cited By ~ 9

Author(s):

E. Goldenberg ◽

T. Bayrak ◽

C. Ozgit-Akgun ◽

A. Haider ◽

S.A. Leghari ◽

...

Keyword(s):

Thin Films ◽

Room Temperature ◽

Rf Sputtering ◽

Electrical Characteristics ◽

Flow Ratio ◽

Post Deposition Annealing ◽

Post Deposition

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Characterization of Cuprous Oxide Thin Films for Application in Solar Cells

Diffusion Foundations ◽

10.4028/www.scientific.net/df.22.65 ◽

2019 ◽

Vol 22 ◽

pp. 65-73

Author(s):

Ørnulf Nordseth ◽

Irinela Chilibon ◽

Bengt Gunnar Svensson ◽

Raj Kumar ◽

Sean Erik Foss ◽

...

Keyword(s):

Thin Films ◽

Solar Cells ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Cuprous Oxide ◽

Wavelength Region ◽

Morphological Properties ◽

Optical Absorption Coefficient ◽

Sputter Deposited ◽

Post Deposition

Cuprous oxide (Cu2O) has a high optical absorption coefficient and favourable electrical properties, which make Cu2O thin films attractive for photovoltaic applications. Using reactive radio-frequency magnetron sputtering, high quality Cu2O thin films with good carrier transport properties were prepared. This paper presents the characteristics of Cu2O thin films that were sputter deposited on quartz substrates and subjected to post-deposition rapid thermal annealing. The thickness of the thin films and the optical constants were determined by ellipsometry spectroscopy (SE). The optical transmittance increased in lower wavelength region after annealing at 900 ̊C in rapid thermal annealing (RTA). The structural and morphological properties of the Cu2O thin films were investigated by electronic scanning microscopy (SEM) and atomic force microscopy (AFM), whereas elemental analysis was performed by X-ray fluorescence spectroscopy (XRF). The carrier mobility, carrier density and film resistivity were changed after post-deposition rapid thermal annealing from respectively ~14 cm2/Vs, ~2.3 x 1015 cm-3 and ~193 Ωcm for the as-deposited Cu2O film to ~49 cm2/Vs, ~5.0 x 1014 cm-3 and ~218 Ωcm for the annealed Cu2O film. The investigation suggests that the sputter-deposited Cu2O thin films have good potential for application as absorber layers in solar cells.

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