Laser Photochemical Growth of Amorphous Silicon at Low Temperatures and Comparison with Thermal Chemical Vapor Deposition

1987 ◽  
Vol 101 ◽  
Author(s):  
D. Eres ◽  
D. H. Lowndes ◽  
D. B. Geohegan ◽  
D. N. Mashburn
Keyword(s):  
Excimer Laser ◽  
Chemical Vapor ◽  
Film Deposition ◽  
In Situ Monitoring ◽  
Deposition Rates ◽  
Thermal Growth ◽  
Photon Fluence ◽  
Amorphous Si ◽  
Controlled Deposition ◽  
193 Nm

ABSTRACTPulsed ArF (193 nm) excimer laser radiation has been used to dissociate disilane (Si2H6), resulting in photochemically controlled deposition of amorphous Si thin films. A high stability HeNe (6328 Å) laser was used for precise in situ monitoring of film deposition rates, under varying deposition conditions. A helium window purge nearly eliminated Si film deposition on the chamber windows. With the excimer laser beam parallel to the substrate, deposition of amorphous Si can be controlled entirely by the photon fluence (negligible background thermal growth) at temperatures from room temperature up to ~400°C. Reasonable photolytic deposition rates (>1 A/sec) are combined with "digital" control of film thickness (>0.02 A/laser pulse). Activation energies of 1.50 (±0.1) eV and 0.09 (±0.02) eV were found for pyrolytic and photolytic deposition, respectively.

Modeling of Silicon Deposition Yield at Low Temperature by ArF Excimer Laser Photolysis of Disilane

1992 ◽  
Vol 263 ◽  
Author(s):  
B. Fowler ◽  
S. Lian ◽  
S. Krishnan ◽  
C. Li ◽  
L. Jung ◽  
...  
Keyword(s):  
Gas Phase ◽  
Excimer Laser ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Growth Surface ◽  
Phase Reaction ◽  
Gas Phase Reactions ◽  
Arf Excimer Laser ◽  
193 Nm

ABSTRACTNon-thermal Chemical Vapor Deposition (CVD) such as laser-enhanced photo-CVD of Si at low temperatures is important for Si-based heterostructures and doping superlattices. Growth kinetic models must be developed to allow these processes to be fully exploited. Intrinsic Si epitaxial layers were deposited at low substrate temperatures of 250-350ºC using the 193 nm output of an ArF excimer laser to directly dissociate Si2H6. The intrinsic film deposition rate can be described by a kinetic model that considers the gas phase reactions of the primary photolysis products and diffusion ofsilicon-bearing molecules to the growth surface. With the laser beam tangential to the substrate surface, growth rates as a function of beam-to-substrate distance have been characterized and indicate that very little gas phase reaction occurs for the dominant Si growth precursor. In order for intrinsic film deposition to result solely from Si2H6 photolysis products, a sticking coefficient ≥ 0.6 must be assigned to the dominant growth precursor in order to fit the observed yield of Si deposited in the films, indicating that the dominant growth precursor in 193 nm Si2H6 photolysis is perhaps H2SiSiH2.

Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

1994 ◽  
Vol 9 (7) ◽  
pp. 1721-1727 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu ◽  
Ching-Yi Tsai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Deposition Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

Deposition and Characterization of Metalorganic Chemical Vapor Deposition ZrO2 Thin Films Using Zr(Thd)4

1991 ◽  
Vol 250 ◽  
Author(s):  
Jie Si ◽  
Chien H. Peng ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Crystal Silicon ◽  
Deposition Rates ◽  
Deposited Films ◽  
Metalorganic Chemical

AbstractExcellent quality ZrO2 thin films were successfully deposited on single crystal silicon wafers by metalorganic chemical vapor deposition (MOCVD) at reduced pressures using tetrakis(2,2,6,6—tetramethyl—3,5—heptanedionato) zirconium, [Zr(thd)4]. For substrate temperatures below 530°C, the film deposition rates were very small (≤ 1 nm/min). The film deposition rates were significantly affected by: (1) source temperature, (2) substrate temperature, and (3) total pressure. As—deposited films are stoichiometric (Zr/O = 1/2) and carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as—deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to high temperature post—deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, are reported. The measured value of the dielectric constant of the as—deposited ZrO2 films is around 19 in the frequency range of 5 kHz to 1000 kHz.

Deposition and Characterization of Polycrystalline Silicon Films on Glass for thin Film Solar Cells

1997 ◽  
Vol 467 ◽  
Author(s):  
R. B. Bergmann ◽  
J. Krinke ◽  
H. P. Strunk ◽  
J. H. Werner
Keyword(s):  
Grain Size ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Solid Phase ◽  
Chemical Vapor ◽  
In Situ Monitoring ◽  
Random Nucleation ◽  
Amorphous Si ◽  
Log Normal ◽  
Polycrystalline Silicon Films

ABSTRACTWe deposit phosphorus-doped, amorphous Si by low pressure chemical vapor deposition and subsequently crystallize the films by furnace annealing at a temperature of 600°C. Optical in-situ monitoring allows one to control the crystallization process. Phosphorus doping leads to faster crystallization and a grain size enhancement with a maximum grain size of 15 μm. Using transmission electron microscopy we find a log-normal grain size distribution in our films. We demonstrate that this distribution not only arises from solid phase crystallization of amorphous Si but also from other crystallization processes based on random nucleation and growth. The log-normal grain size distribution seems to be a general feature of polycrystalline semiconductors.

Selective Chemical Vapor Deposition of Tungsten Films on Titanium—Ion—Irradiated Silicon Dioxide

1989 ◽  
Vol 158 ◽  
Author(s):  
H. Okuhira ◽  
S. Nishimatsu ◽  
K. Ninomiya
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Ion Irradiation ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Film Deposition ◽  
Tungsten Hexafluoride ◽  
Laser Cvd ◽  
193 Nm

ABSTRACTSelective area depositon of adherent tungsten (W) film on titanium (Ti)—ion—irradiated silicon dioxide (SiOz) is achieved. First, Ti—ion irradiation through a stencil mask is performed at 600 eV for 1.1 X 1016 atoms/cm2 in a reaction chamber. Next, ArF excimer laser (λ = 193 nm) chemical vapor deposition (CVD) with tungsten hexafluoride (WFs) and hydrogen (H2) is carried out for 40 seconds at 400 K. Finally, low—pressure (LP) CVD is carried out at 600 K and then W films are deposited selectively on the ion—irradiated SiO2 Without the laser CVD step, the ion—irradiation pattern disappears during LPCVD and no W film deposition occurs. Therefore, laser CVD is essential in our experiments.

Effects of plasma and/or 193 nm excimer‐laser irradiation in chemical‐vapor deposition of boron films from B2H6+He

1992 ◽  
Vol 71 (11) ◽  
pp. 5654-5664 ◽  
Author(s):  
Shojiro Komatsu ◽  
Mitsuo Kasamatsu ◽  
Kawakatsu Yamada ◽  
Yusuke Moriyoshi
Keyword(s):  
Chemical Vapor Deposition ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excimer Laser Irradiation ◽  
193 Nm

scholarly journals Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiNx for Low Temperature Thin Film Encapsulation

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 88 ◽  
Author(s):  
Kunsik An ◽  
Ho-Nyun Lee ◽  
Kwan Hyun Cho ◽  
Seung-Woo Lee ◽  
David J. Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Excimer Laser ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Polyethylene Naphthalate ◽  
Laser Illumination ◽  
193 Nm

In this study, silicon nitride thin films are deposited on organic polyethylene-naphthalate (PEN) substrates by laser assisted plasma enhanced chemical vapor deposition (LAPECVD) at a low temperature (150 °C) for the purpose of evaluating the encapsulation performance. A plasma generator is placed above the sample stage as conventional plasma enhanced chemical vapor deposition (PECVD) configuration, and the excimer laser beam of 193 nm wavelength illuminated in parallel to the sample surface is coupled to the reaction zone between the sample and plasma source. Major roles of the laser illumination in LAPECVD process are to compete with or complement the plasma decomposition of reactant gases. While a laser mainly decomposes ammonia molecules in the plasma, it also contributes to the photolysis of silane in the plasma state, possibly through the resulting hydrogen radicals and the excitation of intermediate disilane products. It will also be shown that the LAPECVD with coupled laser illumination of 193 nm wavelength improves the deposition rate of silicon nitride thin film, and the encapsulation performance evaluated via the measurement of water vapor transmission rate (WVTR).

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