Selective Chemical Vapor Deposition of Tungsten Films on Titanium—Ion—Irradiated Silicon Dioxide

1989 ◽  
Vol 158 ◽  
Author(s):  
H. Okuhira ◽  
S. Nishimatsu ◽  
K. Ninomiya
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Ion Irradiation ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Film Deposition ◽  
Tungsten Hexafluoride ◽  
Laser Cvd ◽  
193 Nm

ABSTRACTSelective area depositon of adherent tungsten (W) film on titanium (Ti)—ion—irradiated silicon dioxide (SiOz) is achieved. First, Ti—ion irradiation through a stencil mask is performed at 600 eV for 1.1 X 1016 atoms/cm2 in a reaction chamber. Next, ArF excimer laser (λ = 193 nm) chemical vapor deposition (CVD) with tungsten hexafluoride (WFs) and hydrogen (H2) is carried out for 40 seconds at 400 K. Finally, low—pressure (LP) CVD is carried out at 600 K and then W films are deposited selectively on the ion—irradiated SiO2 Without the laser CVD step, the ion—irradiation pattern disappears during LPCVD and no W film deposition occurs. Therefore, laser CVD is essential in our experiments.

Chemical vapor deposition of silicon dioxide barrier layers for conductivity enhancement of tin oxide films

1989 ◽  
Vol 4 (4) ◽  
pp. 863-872 ◽  
Author(s):  
Frank B. Ellis ◽  
Jim Houghton
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Tin Oxide ◽  
Vapor Deposition ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Soda Lime ◽  
Film Deposition ◽  
Soda Lime Glass ◽  
Tin Oxide Films

Silicon dioxide for use as a diffusion barrier between soda lime glass and fluorine-doped tin oxide is deposited uniformly by atmospheric chemical vapor deposition from silane. oxygen, and nitrogen using a simple single-slot injector head. With a sufficiently thick silicon dioxide layer, the conductivity of the tin oxide is greatly improved by reducing the diffusion of sodium into the tin oxide as it is deposited between about 500 to 600 °C. Based upon the conductivity of thin lightly doped tin oxide films, it appears that at least 250 nm of silicon dioxide deposited on soda lime glass are required to essentially eliminate the diffusion of sodium into the tin oxide. However, only about 10 nm of silicon dioxide are required to obtain almost the full benefit of 250 nm thick films for moderately doped tin oxide films approximately 500 nm thick, The silicon dioxide deposition process is examined between 350 and 580 °C. The activation energy for the deposition is about 27 kJ/mole. Peak and average film deposition rates greater than 50 nm/sec and 10 nm/sec, respectively, may be obtained. The dependence of the film growth rate on the silane, oxygen, and propylene (an inhibitor) concentration is examined. The deposition rate is found to be limited by the rate of gas-phase reactions. Deposition conditions which yield high silane utilization and good film uniformity are discussed. The origin of undesirable by-product powder is studied. At low silane concentration, powder is mainly formed as the gases cool due to condensation from intermediate species.

Low-pressure chemical vapor deposition of silicon dioxide using diethylsilane

1993 ◽  
Vol 5 (12) ◽  
pp. 1710-1714 ◽  
Author(s):  
R. A. Levy ◽  
J. M. Grow ◽  
G. S. Chakravarthy
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

1994 ◽  
Vol 9 (7) ◽  
pp. 1721-1727 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu ◽  
Ching-Yi Tsai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Deposition Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

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