Ion beam profiling and end‐point detection with microfocused secondary ion mass spectroscopy

1990 ◽  
Vol 8 (1) ◽  
pp. 93-98 ◽  
Author(s):  
H. T. Lin ◽  
S. Balakrishnan ◽  
J. F. McDonald ◽  
J. C. Corelli
1987 ◽  
Vol 101 ◽  
Author(s):  
L. R. Harriott ◽  
M. J. Vasile

ABSTRACTA secondary ion mass spectrometry (SIMS) system has been incorporated into the AT&T-BL second generation focused ion beam (FIB) micromachining system. The primary applications are end-point detection and topographical element mapping. End-point detection of Cr micromachining on photomasks was done with raster sizes ranging from 10 μm x 10 μm to 3 μm x 3 μm. SIMS end-points, total ions images, and transmitted light measurements show that the ion-milling can be controlled to stop prior to or after the Cr/glass interface. Mass selected secondary ion images have been obtained for high yield ions such as52Cr+ and27 A1+ on raster fields of 25 μm in time intervals ranging from 20 to 100 sec. Al+ SIMS images of 1 μm lines and spaces from a VLSI test pattern have been obtained.


1995 ◽  
Vol 8 (8) ◽  
pp. 676-679 ◽  
Author(s):  
A Matthes ◽  
F Schmidl ◽  
K -U Barholz ◽  
F Elschner ◽  
H Schneidewind ◽  
...  

1992 ◽  
Vol 61 (2) ◽  
pp. 228-230 ◽  
Author(s):  
R. G. Humphreys ◽  
N. G. Chew ◽  
S. F. Morgan ◽  
J. S. Satchell ◽  
A. G. Cullis ◽  
...  

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