Automated End-Point Detection and Targeted Ar+ Milling of Advanced Integrated Circuit FIB TEM Specimens

2017 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
J.T. Harbaugh ◽  
M. Boccabella ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
End Point Detection ◽  
Point Detection ◽  
Argon Ion

Abstract The sub-nanometer resolution that transmission electron microscopy (TEM) provides is critical to the development and fabrication of advanced integrated circuits. TEM specimens are usually prepared using the focused ion beam, which can cause gallium-induced artifacts and amorphization. This work presents the use of a concentrated argon ion beam for reproducible TEM specimen preparation using automatic milling termination and targeted ion milling of device features; the result is high-quality and electron-transparent specimens of less than 30 nm. Such work is relevant for semiconductor product development and failure analysis.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

Focused Ion Beam Sims for Micromachining Applications

1987 ◽  
Vol 101 ◽  
Author(s):  
L. R. Harriott ◽  
M. J. Vasile
Keyword(s):  
Focused Ion Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
High Yield ◽  
Ion Milling ◽  
End Point ◽  
Glass Interface ◽  
End Point Detection ◽  
Point Detection ◽  
Secondary Ion

ABSTRACTA secondary ion mass spectrometry (SIMS) system has been incorporated into the AT&T-BL second generation focused ion beam (FIB) micromachining system. The primary applications are end-point detection and topographical element mapping. End-point detection of Cr micromachining on photomasks was done with raster sizes ranging from 10 μm x 10 μm to 3 μm x 3 μm. SIMS end-points, total ions images, and transmitted light measurements show that the ion-milling can be controlled to stop prior to or after the Cr/glass interface. Mass selected secondary ion images have been obtained for high yield ions such as52Cr+ and27 A1+ on raster fields of 25 μm in time intervals ranging from 20 to 100 sec. Al+ SIMS images of 1 μm lines and spaces from a VLSI test pattern have been obtained.

High-Quality Sample Preparation by Low kV FIB Thinning for Analytical TEM Measurements

2007 ◽  
Vol 13 (2) ◽  
pp. 80-86 ◽  
Author(s):  
Sara Bals ◽  
Wim Tirry ◽  
Remco Geurts ◽  
Zhiqing Yang ◽  
Dominique Schryvers
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Specimen ◽  
Specimen Preparation ◽  
Ion Milling ◽  
High Quality ◽  
Transmission Electron ◽  
Quantitative Manner

Focused ion beam specimen preparation has been used for NiTi samples and SrTiO3/SrRuO3 multilayers with prevention of surface amorphization and Ga implantation by a 2-kV cleaning procedure. Transmission electron microscopy techniques show that the samples are of high quality with a controlled thickness over large scales. Furthermore, preferential thinning effects in multicompounds are avoided, which is important when analytical transmission electron microscopy measurements need to be interpreted in a quantitative manner. The results are compared to similar measurements acquired for samples obtained using conventional preparation techniques such as electropolishing for alloys and ion milling for oxides.

Second Order Effect Monitoring During Backside Milling for Functional End Point Detection

2019 ◽  
Author(s):  
Anthony George ◽  
Isaac Goldthwaite ◽  
Katie Liszewski ◽  
Jeremiah Schley ◽  
Thomas Kent
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Second Order ◽  
Order Effects ◽  
Back Side ◽  
End Point ◽  
End Point Detection ◽  
Second Order Effects ◽  
Point Detection

Abstract Backside silicon removal provides an avenue for a number of modern non-destructive and circuit edit techniques. Visible light microscopy, electron beam microscopy, and focused ion beam circuit edit benefit from a removal of back side silicon from the integrated circuit being examined. Backside milling provides a potential path for rapid sample preparation when thinned or ultrathinned samples are required. However, backside milling is an inherently destructive process and can damage the device function, rendering it no longer useful for further nondestructive analysis. Recent methods of backside milling do not guarantee device functionality at a detected end point without a priori knowledge. This work presents a methodology for functional end point detection during backside milling of integrated circuit packaging. This is achieved by monitoring second order effects in response to applied device strain, which guide the milling procedure, avoiding destructive force as the backside material is removed. Experimental data suggest a correlation between device power consumption waveforms and second order effects which inform an in situ functional end point. Keywords: functional end point, side-channel analysis, backside thinning, milling, machine learning, second order effects

Narrow-Beam Argon Ion Milling of Ex Situ Lift-Out FIB Specimens Mounted on Various Carbon-Supported Grids

2018 ◽  
Author(s):  
M. J. Campin ◽  
C. S. Bonifacio ◽  
P. Nowakowski ◽  
P. E. Fischione ◽  
L. A. Giannuzzi
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Carbon Support ◽  
Ex Situ ◽  
Specimen Preparation ◽  
Narrow Beam ◽  
Ion Milling ◽  
Preparation Methods ◽  
Argon Ion

Abstract The semiconductor industry recently has been investigating new specimen preparation methods that can improve throughput while maintaining quality. The result has been a combination of focused ion beam (FIB) preparation and ex situ lift-out (EXLO) techniques. Unfortunately, the carbon support on the EXLO grid presents problems if the lamella needs to be thinned once it is on the grid. In this paper, we show how low-energy (< 1 keV), narrow-beam (< 1 μm diameter) Ar ion milling can be used to thin specimens and remove gallium from EXLO FIB specimens mounted on various support grids.

Preparation of TEM samples by focused ion beam (FIB) techniques: applications to the study of clays and phyllosilicates in meteorites

2003 ◽  
Vol 67 (3) ◽  
pp. 581-592 ◽  
Author(s):  
M. R. Lee ◽  
P. A. Bland ◽  
G. Graham
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Mixed Valence ◽  
Planetary Science ◽  
Basal Spacing ◽  
Ion Milling ◽  
Cut Edge ◽  
Transmission Electron ◽  
Study Results ◽  
Argon Ion

AbstractTransmission electron microscope samples were prepared of ALH 78045 and ALH 88045, two clay-and phyllosilicate-bearing Antarctic meteorites, using argon ion milling and focused ion beam (FIB) techniques. ALH 78045 contains clay- and phyllosilicate-filled veins that have formed by terrestrial weathering of olivine, orthopyroxene and metal. Very narrow (∼10 nm) intragranular clay-filled veins could be observed in the TEM samples prepared by argon ion milling, whereas differential thinning and lack of precision in the location of the electron-transparent areas hindered the study of wider (5 — 15 μm) phyllosilicate-filled intergranular veins. Using the FIB instrument, electron-transparent slices were cut from specific parts of the wider veins and lifted out for TEM study. Results show that these veins are occluded by cronstedtite, a mixed-valence Fe-rich phyllosilicate. This discovery shows that silicates can be both dissolved and precipitated during terrestrial weathering within the Antarctic ice. ALH 88045 is one of a small number of known CM1 carbonaceous chondrites. This meteorite is largely composed of flattened ellipsoidal aggregates of serpentine-group phyllosilicates. To determine the mineralogy and texture of phyllosilicates within specific aggregates, TEM samples were prepared by trenching into the cut edge of a sample using the FIB instrument. Results show that Mg-rich aggregates are composed of lath-shaped serpentine crystals with a ∼0.73 nm basal spacing, which is typical of the products of low temperature aqueous alteration within asteroidal parent bodies. Results of this work demonstrate that the FIB has enormous potential in a number of areas of Earth and planetary science.

Imaging Thin Films of Nanoporous Low-k Dielectrics: Comparison between Ultramicrotomy and Focused Ion Beam Preparations for Transmission Electron Microscopy

2005 ◽  
Vol 12 (2) ◽  
pp. 156-159 ◽  
Author(s):  
Leslie E. Thompson ◽  
Philip M. Rice ◽  
Eugene Delenia ◽  
Victor Y. Lee ◽  
Phillip J. Brock ◽  
...  
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
Low K ◽  
Diamond Knife

Ultramicrotomy, the technique of cutting nanometers-thin slices of material using a diamond knife, was applied to prepare transmission electron microscope (TEM) specimens of nanoporous poly(methylsilsesquioxane) (PMSSQ) thin films. This technique was compared to focused ion beam (FIB) cross-section preparation to address possible artifacts resulting from deformation of nanoporous microstructure during the sample preparation. It was found that ultramicrotomy is a successful TEM specimen preparation method for nanoporous PMSSQ thin films when combined with low-energy ion milling as a final step. A thick, sacrificial carbon coating was identified as a method of reducing defects from the FIB process which included film shrinkage and pore deformation.

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