Full-Range Analytic Drain Current Model for Depletion-Mode Long-Channel Surrounding-Gate Nanowire Field-Effect Transistor

2013 ◽  
Vol 13 (4) ◽  
pp. 361-366 ◽  
Author(s):  
Yun Seop Yu
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Current Model ◽  
Full Range ◽  
Drain Current ◽  
Surrounding Gate ◽  
Effect Transistor ◽  
Long Channel

Modeling the Carrier Mobility in Nanowire Channel FET

2007 ◽  
Vol 1017 ◽  
Author(s):  
Werner Prost ◽  
Kai Blekker ◽  
Quoc-Thai Do ◽  
Ingo Regolin ◽  
Sven Müller ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Static Field ◽  
Device Model ◽  
Inas Nanowires ◽  
Effect Transistor ◽  
Long Channel

AbstractWe report on the extraction of carrier type, and mobility in semiconductor nanowires by adopting experimental nanowire field-effect transistor device data to a long channel MISFET device model. Numerous field-effect transistors were fabricated using n-InAs nanowires of a diameter of 50 nm as a channel. The I-V data of devices were analyzed at low to medium drain current in order to reduce the effect of extrinsic resistances. The gate capacitance is determined by an electro-static field simulation tool. The carrier mobility remains as the only parameter to fit experimental to modeled device data. The electron mobility in n-InAs nanowires is evaluated to µ = 13,000 cm2/Vs while for comparison n-ZnO nanowires exhibit a mobility of 800 cm2/Vs.

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