Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide

1987 ◽  
Vol 102 ◽  
Author(s):  
D. L. Doering ◽  
F. S. Ohuchi ◽  
W. Jaegermann ◽  
B. A. Parkinson
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Layered Material ◽  
Tungsten Disulfide ◽  
Layer By Layer ◽  
Metal Contacts ◽  
Layered Semiconductor ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe growth of copper, silver and gold thin films on tungsten disulfide has been examined as a model of metal contacts on a layered semiconductor. All three metals were found to grow epitaxially on the WS2. However, Cu appears to form a discontinuous film while Au and Ag grow layer by layer. Such epitaxial growth is somewhat surprising since there is a large lattice mismatch between the metals and the WS2.

Observation of Surfactant Properties of Thallium in the Epitaxial Growth of Indium Arsenide on Gallium Arsenide

1999 ◽  
Vol 570 ◽  
Author(s):  
D.F. Storm ◽  
M.D. Lange
Keyword(s):  
Gallium Arsenide ◽  
Electronic Properties ◽  
Epitaxial Growth ◽  
Indium Arsenide ◽  
Lattice Mismatch ◽  
Layer By Layer ◽  
Surfactant Properties ◽  
Large Lattice ◽  
Layer Mode ◽  
Large Lattice Mismatch

ABSTRACTBecause of the large lattice mismatch between InAs and GaAs, the growth of the former on the (001) surface of the latter undergoes a well-known transition from a layer-by-layer mode to an island mode at an equivalent coverage of 1–2 monolayers (ML). We have observed a suppression of this transition when growth proceeds under a simultaneous thallium flux. The thallium is not significantly incorporated into the InAs layer; however, approximately I ML may remain at the interface. The effect of the thallium on the electronic properties of the InAs is investigated.

Highly Mismatched Hetero-Epitaxial Growth of Cubic Sic on Si

1987 ◽  
Vol 97 ◽  
Author(s):  
Hiroyuki Matsunami
Keyword(s):  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Electronic Devices ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Optimum Conditions ◽  
Large Lattice ◽  
Impurity Doping ◽  
Large Lattice Mismatch

ABSTRACTSingle crystals of cubic SiC were hetero-epitaxially grown on Si by chemical vapor deposition (CVD) method. A carbonized buffer layer on Si is utilized to overcome the large lattice mismatch of 20 %. Optimum conditions to make the buffer layers and those structures are discussed. Crystal quality of the CVD grown cubic SiC is analyzed by using X-ray analyses and microscopic observations. Electrical properties controlled by impurity doping during epitaxial growth are described together with fundamental electronic devices.

Epitaxial Growth of 3C-SiC on T-shape columnar Si Substrates

2004 ◽  
Vol 815 ◽  
Author(s):  
S. Nishino ◽  
A. Shoji ◽  
T. Nishiguchi ◽  
S. Ohshima
Keyword(s):  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Defect Density ◽  
Misfit Dislocations ◽  
High Electron ◽  
Large Area ◽  
Si Substrates ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Cubic Silicon Carbide

AbstractCubic silicon carbide (3C-SiC) is a suitable semiconductor material for high temperature, high power and high frequency electronic devices, because of its wide bandgap, high electron mobility and high saturated electron drift velocity. The usage of Si substrates has the advantage of large area substrates for the growth of 3C-SiC layers. However, large lattice mismatch between 3C-SiC and Si (>20%) has caused the generation of defects such as misfit dislocations, twins, stacking faults and threading dislocations at the SiC/Si interface. Lateral epitaxial overgrowth (ELOG) of 3C-SiC on Si substrates using SiO2 has been reported to reduce the defect density. In this report, epitaxial growth of 3C-SiC on T-shape patterned (100) Si substrates has been investigated to reduce interfacial defects.

Large lattice mismatch effects on the epitaxial growth and magnetic properties of FePt films

2018 ◽  
Vol 446 ◽  
pp. 125-134 ◽  
Author(s):  
Jinyu Deng ◽  
Kaifeng Dong ◽  
Ping Yang ◽  
Yingguo Peng ◽  
Ganping Ju ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Large Lattice ◽  
Large Lattice Mismatch

Epitaxial Growth in Large Lattice Mismatch Systems: Characteristics of Domain Epitaxy

1992 ◽  
Vol 280 ◽  
Author(s):  
Tsvetanka S. Zheleva ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Epitaxial Growth ◽  
Interfacial Energy ◽  
Lattice Mismatch ◽  
Misfit Dislocations ◽  
Orientation Relationships ◽  
Epitaxial Relationship ◽  
Model Calculations ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe characteristics of epitaxial growth in large lattice mismatch TiN/Si and TiN/GaAs systems are analyzed. The epitaxial growth in these large mismatch systems is modelled in terms of various energy contributions to the epilayer. The new mode of growth, defined as domain epitaxial growth in these high mismatch systems is maintained by the formation of misfit dislocations at repeated intervals. The epitaxial relationship within the domain consists of n interplanar distances of the overlayer film closely matching with m interplanar distances of the substrate, where m and n are integers. The interfacial energy is found to be a very important term in determining the orientation relationships. The results of the model calculations are compared with the experimental observations.

Mosaic structure in epitaxial thin films having large lattice mismatch

1997 ◽  
Vol 82 (9) ◽  
pp. 4286-4295 ◽  
Author(s):  
V. Srikant ◽  
J. S. Speck ◽  
D. R. Clarke
Keyword(s):  
Thin Films ◽  
Lattice Mismatch ◽  
Mosaic Structure ◽  
Epitaxial Thin Films ◽  
Large Lattice ◽  
Large Lattice Mismatch
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