Epitaxial Growth of 3C-SiC on T-shape columnar Si Substrates

2004 ◽  
Vol 815 ◽  
Author(s):  
S. Nishino ◽  
A. Shoji ◽  
T. Nishiguchi ◽  
S. Ohshima
Keyword(s):  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Defect Density ◽  
Misfit Dislocations ◽  
High Electron ◽  
Large Area ◽  
Si Substrates ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Cubic Silicon Carbide

AbstractCubic silicon carbide (3C-SiC) is a suitable semiconductor material for high temperature, high power and high frequency electronic devices, because of its wide bandgap, high electron mobility and high saturated electron drift velocity. The usage of Si substrates has the advantage of large area substrates for the growth of 3C-SiC layers. However, large lattice mismatch between 3C-SiC and Si (>20%) has caused the generation of defects such as misfit dislocations, twins, stacking faults and threading dislocations at the SiC/Si interface. Lateral epitaxial overgrowth (ELOG) of 3C-SiC on Si substrates using SiO2 has been reported to reduce the defect density. In this report, epitaxial growth of 3C-SiC on T-shape patterned (100) Si substrates has been investigated to reduce interfacial defects.

Epitaxial Growth in Large Lattice Mismatch Systems: Characteristics of Domain Epitaxy

1992 ◽  
Vol 280 ◽  
Author(s):  
Tsvetanka S. Zheleva ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Epitaxial Growth ◽  
Interfacial Energy ◽  
Lattice Mismatch ◽  
Misfit Dislocations ◽  
Orientation Relationships ◽  
Epitaxial Relationship ◽  
Model Calculations ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe characteristics of epitaxial growth in large lattice mismatch TiN/Si and TiN/GaAs systems are analyzed. The epitaxial growth in these large mismatch systems is modelled in terms of various energy contributions to the epilayer. The new mode of growth, defined as domain epitaxial growth in these high mismatch systems is maintained by the formation of misfit dislocations at repeated intervals. The epitaxial relationship within the domain consists of n interplanar distances of the overlayer film closely matching with m interplanar distances of the substrate, where m and n are integers. The interfacial energy is found to be a very important term in determining the orientation relationships. The results of the model calculations are compared with the experimental observations.

Unique Defect-Induced Donor Structure at the Lattice Mismatched InAs/GaP Heterointerface

1998 ◽  
Vol 535 ◽  
Author(s):  
V. Gopal ◽  
E.-H. Chen ◽  
E. P. Kvam ◽  
J. M. Woodall
Keyword(s):  
Lattice Mismatch ◽  
Misfit Dislocations ◽  
High Electron ◽  
Epitaxial Relationship ◽  
Band Gap Engineering ◽  
Large Lattice ◽  
Device Applications ◽  
Direct Growth ◽  
Large Lattice Mismatch ◽  
Hall Sensors

AbstractWe have investigated the direct growth of narrow-gap InAs on wide-gap GaP by Molecular Beam Epitaxy. InAs and GaP have the largest mismatch among all the III-arsenides and the III-phosphides – 11%. A perfect epitaxial relationship is maintained between the InAs and the GaP despite the large lattice mismatch. Moreover, a reproducible defect structure with unique electronic properties is developed at the heterointerface. A point defect associated with the intersection of 90° misfit dislocations may act as an ordered, structural dopant. This dopant is fully ionized with a constant, high sheet carrier density of 1013 cm−2, independent of InAs layer thickness, and exhibits no freeze out even at 5 K. Device applications for such a system include temperature insensitive Hall sensors. We have also demonstrated high electron mobilities (over 10000 cm2/V-sec) in nominally undoped thick InAs layers grown on GaP. The explanation of this effect is presented to emphasize the exciting possibilities of band gap engineering in this system.

Interfacial Structure and Defects in GaN/AlGaN Heterojunction Epitaxially Grown on LiGa02 Substrate by Molecular Beam Epitaxy

2000 ◽  
Vol 6 (S2) ◽  
pp. 1106-1107
Author(s):  
Z. R. Dai ◽  
Sangbeom Kang ◽  
W. Alan Doolittle ◽  
Z. L. Wang ◽  
April S. Brown
Keyword(s):  
Lattice Mismatch ◽  
Defect Density ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
Interfacial Structure ◽  
High Electron ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Average Lattice ◽  
Lithium Gallate

The performance of III-Nitride based Light Emitting Diodes (LEDs), LASERs, GaN/AlGaN MODFETs (Modulation-doped Field Effect Transistors) and HEMTs (High Electron Mobility Transistors) have been improved dramatically over the past few years [1,2], despite the relatively poor material quality of GaN, as compared to GaAs, for example. The intrinsic properties of the materials system make it extremely well suited to both optoelectronic and microwave power transistor applications. Typically, GaN is grown on substrates such as GaAs, Al2O3 (sapphire) or SiC with large lattice mismatch. This has usually resulted in an extremely high defect density in the GaN layer. The growth of GaN on lithium gallate LiGaO2 (LGO) affords many advantages compared to all other available substrates. LGO offers the smallest average lattice mismatch of any available substrate for the Ill-nitrides. This facilitates the growth of high quality GaN directly on Lithium Gallate without the need for a defective buffer to decouple the strain associated with the large lattice mismatch of other substrates [3].

Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide

1987 ◽  
Vol 102 ◽  
Author(s):  
D. L. Doering ◽  
F. S. Ohuchi ◽  
W. Jaegermann ◽  
B. A. Parkinson
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Layered Material ◽  
Tungsten Disulfide ◽  
Layer By Layer ◽  
Metal Contacts ◽  
Layered Semiconductor ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe growth of copper, silver and gold thin films on tungsten disulfide has been examined as a model of metal contacts on a layered semiconductor. All three metals were found to grow epitaxially on the WS2. However, Cu appears to form a discontinuous film while Au and Ag grow layer by layer. Such epitaxial growth is somewhat surprising since there is a large lattice mismatch between the metals and the WS2.

Equilibrium Analysis of Lattice-Mismatched Nanowire Heterostructures

2002 ◽  
Vol 737 ◽  
Author(s):  
E. Ertekin ◽  
P.A. Greaney ◽  
T. D. Sands ◽  
D. C. Chrzan
Keyword(s):  
Simple Model ◽  
Misfit Dislocation ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Equilibrium Analysis ◽  
Misfit Dislocations ◽  
Model Based ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe quality of lattice-mismatched semiconductor heterojunctions is often limited by the presence of misfit dislocations. Nanowire geometries offer the promise of creating highly mismatched, yet dislocation free heterojunctions. A simple model, based upon the critical thickness model of Matthews and Blakeslee for misfit dislocation formation in planar heterostructures, illustrates that there exists a critical nanowire radius for which a coherent heterostructured nanowire system is unstable with respect to the formation of misfit dislocations. The model indicates that within the nanowire geometry, it should be possible to create perfect heterojunctions with large lattice-mismatch.

Nucleation of misfit and threading dislocations in GaSb/GaAs(001) heterostructure

1996 ◽  
Vol 54 ◽  
pp. 946-947
Author(s):  
W. Qian ◽  
M. Skowronski ◽  
R. Kaspi ◽  
M. De Graef
Keyword(s):  
Lattice Mismatch ◽  
Strain Relaxation ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Extended Defects ◽  
Large Lattice ◽  
Threading Dislocation Density ◽  
Small Lattice ◽  
Large Lattice Mismatch

GaSb thin film grown on GaAs is a promising substrate for fabrication of electronic and optical devices such as infrared photodetectors. However, these two materials exhibit a 7.8% lattice constant mismatch which raises concerns about the amount of extended defects introduced during strain relaxation. It was found that, unlike small lattice mismatched systems such as InxGa1-xAs/GaAs or GexSi1-x/Si(100), the GaSb/GaAs interface consists of a quasi-periodic array of 90° misfit dislocations, and the threading dislocation density is low despite its large lattice mismatch. This paper reports on the initial stages of GaSb growth on GaAs(001) substrates by molecular beam epitaxy (MBE). In particular, we discuss the possible formation mechanism of misfit dislocations at the GaSb/GaAs(001) interface and the origin of threading dislocations in the GaSb epilayer.GaSb thin films with nominal thicknesses of 5 to 100 nm were grown on GaAs(001) by MBE at a growth rate of about 0.8 monolayers per second.

Observation of Surfactant Properties of Thallium in the Epitaxial Growth of Indium Arsenide on Gallium Arsenide

1999 ◽  
Vol 570 ◽  
Author(s):  
D.F. Storm ◽  
M.D. Lange
Keyword(s):  
Gallium Arsenide ◽  
Electronic Properties ◽  
Epitaxial Growth ◽  
Indium Arsenide ◽  
Lattice Mismatch ◽  
Layer By Layer ◽  
Surfactant Properties ◽  
Large Lattice ◽  
Layer Mode ◽  
Large Lattice Mismatch

ABSTRACTBecause of the large lattice mismatch between InAs and GaAs, the growth of the former on the (001) surface of the latter undergoes a well-known transition from a layer-by-layer mode to an island mode at an equivalent coverage of 1–2 monolayers (ML). We have observed a suppression of this transition when growth proceeds under a simultaneous thallium flux. The thallium is not significantly incorporated into the InAs layer; however, approximately I ML may remain at the interface. The effect of the thallium on the electronic properties of the InAs is investigated.

Highly Mismatched Hetero-Epitaxial Growth of Cubic Sic on Si

1987 ◽  
Vol 97 ◽  
Author(s):  
Hiroyuki Matsunami
Keyword(s):  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Electronic Devices ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Optimum Conditions ◽  
Large Lattice ◽  
Impurity Doping ◽  
Large Lattice Mismatch

ABSTRACTSingle crystals of cubic SiC were hetero-epitaxially grown on Si by chemical vapor deposition (CVD) method. A carbonized buffer layer on Si is utilized to overcome the large lattice mismatch of 20 %. Optimum conditions to make the buffer layers and those structures are discussed. Crystal quality of the CVD grown cubic SiC is analyzed by using X-ray analyses and microscopic observations. Electrical properties controlled by impurity doping during epitaxial growth are described together with fundamental electronic devices.

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