Spatially Resolved Characterization of Plastic Deformation Induced by Focused-Ion Beam Processing in Structured InGaN/GaN Layers
AbstractIn this study the results of polychromatic X-ray microbeam analysis (PXM) of the structural changes caused by FIB in nitride heterostructures are presented and discussed in connection with micro-photoluminescence (μ-PL), fluorescent analysis, scanning electron (SEM) and transmission electron microscopy (TEM) data. It is shown that FIB processing distorts the lattice in the InGaN/GaN layer not only in the immediate vicinity of the processed area but also in the surroundings. A narrow amorphidized top layer is formed in the direct ion beam impact area.