Effect of Fabrication Variables on the Performance of Zinc Oxide Metal-Semiconductor-Metal Photodetectors

2007 ◽  
Vol 1035 ◽  
Author(s):  
Tingfang Yen ◽  
Dave Strome ◽  
Sung Jin Kim ◽  
Michael DiNezzaa ◽  
Alexander N. Cartwright ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Zno Thin Films ◽  
Silicon Substrates ◽  
Radio Frequency Magnetron Sputtering ◽  
Rapid Thermal Anneal ◽  
Conventional Furnace ◽  
Metal Semiconductor Metal ◽  
Laser Anneal ◽  
Parallel Pattern ◽  
Msm Photodetectors

AbstractThe performance of ZnO metal-semiconductor-metal (MSM) photodetectors can be significantly influenced by modifications in the fabrication process. ZnO thin films were deposited onto silicon substrates by radio frequency magnetron sputtering and later annealed by conventional furnace, rapid thermal anneal or laser anneal. The photoluminescence (PL) analysis revealed that laser annealing at 250 mW/cm2 increased the 370 nm peak from 520 to 1700 a.u. and reduced the defect peak from 380 to 20 a.u. MSM photodetectors were fabricated using an interdigitated and parallel pattern. Values of current responsivity ranged from about 0.025 A/W to above 430 A/W depending upon fabrication conditions and design.

Effects of Nonmelt Laser Annealing on a 5keV Boron Implant in Silicon

2000 ◽  
Vol 610 ◽  
Author(s):  
Susan Earles ◽  
Mark Law ◽  
Kevin Jones ◽  
Rich Brindos ◽  
omit Talwar
Keyword(s):  
Thermal Processing ◽  
Laser Annealing ◽  
Defect Density ◽  
Ramp Rate ◽  
Rapid Thermal Anneal ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Post Annealing ◽  
Laser Anneal ◽  
Laser Thermal Processing

AbstractTo investigate the effects of ramp rate on the transient enhanced diffusion of boron in silicon, laser thermal processing (LTP) in the nonmelt regime has been investigated. A nonmelt laser anneal has been performed on a 5 keV, 1e15 boron implant. The implant energy of 5keV was chosen to simplify analysis. A rapid thermal anneal (RTA) at 1000°C and furnace anneals at 750 °C were used to show the effect of post annealing on the LTPd samples. Results show the sheet resistance drops by up to a factor of two for samples receiving the nonmelt LTP and the RTA compared with the samples just receiving the RTA. An increase in the hall mobility was also observed for the samples receiving the LTP. The nonmelt LTP was also shown to strongly affect the extended defect density. During post anneals, a higher density of smaller defects evolved in the samples receiving the LTP.

Laser annealing of laser assisted molecular beam deposited ZnO thin films with application to metal-semiconductor-metal photodetectors

2006 ◽  
Vol 100 (5) ◽  
pp. 053106 ◽  
Author(s):  
Meiya Li ◽  
Wayne Anderson ◽  
Nehal Chokshi ◽  
Robert L. DeLeon ◽  
Gary Tompa
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Laser Annealing ◽  
Zno Thin Films ◽  
Metal Semiconductor Metal

Ultraviolet Photodetectors Based on MgZnO Thin Films

2014 ◽  
Vol 852 ◽  
pp. 291-295
Author(s):  
Man Zhao ◽  
Da Yong Jiang ◽  
Wen Jing Liu ◽  
Guang Yang ◽  
De Jun Li
Keyword(s):  
Radio Frequency Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Interelectrode Spacing ◽  
Rejection Ratio ◽  
Ultraviolet Detectors ◽  
Interdigital Electrodes ◽  
Metal Semiconductor Metal ◽  
Order Of Magnitude ◽  
Ultraviolet Photodetectors ◽  
Msm Photodetectors

In recent years, MgZnO alloy becomes one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper, we have fabricated three metal semiconductor metal (MSM) photodetectors on Mg0.42Zn0.58O film grown by radio frequency magnetron sputtering. The interdigital electrodes are 500 um long and 5 um wide with an interelectrode spacing 2, 5 and 10 um, respectively. The structural, electrical and optical properties of epilayers were characterized by various techniques. At 5 V bias, a peak responsivity of 1.09 mA/W was achieved at 283 nm for the device with 2 um interelectrode spacing. The peak responsivity at 283 nm increased with the reduction of the finger pitch for three devices and the ultraviolet-visible rejection ratio (R283 nm/R400 nm) was more than one order of magnitude at 5 V bias.

Effects of annealing temperature on a ZnO thin film-based ultraviolet photodetector

2021 ◽  
Author(s):  
Ümit Doğan ◽  
Fahrettin Sarcan ◽  
Kamuran Kara Koç ◽  
Furkan Kuruoğlu ◽  
Ayşe Erol
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Deposition Process ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Zno Thin Film ◽  
Metal Semiconductor Metal ◽  
Filtered Cathodic Vacuum Arc ◽  
Msm Photodetectors

Abstract In this paper, the effects of annealing temperature on the performance of a ZnO thin film-based Metal-Semiconductor-Metal (MSM) type ultraviolet (UV) photodetector is reported. ZnO thin films were grown on a glass substrate using the Pulsed Filtered Cathodic Vacuum Arc Deposition (PFCVAD) technique at room temperature and after the deposition process the samples were annealed at 400, 450 and 550 °C in air condition to investigate the annealing effect on the structural, electrical, and optical properties of the photodetector. ZnO thin films which have grains in nanometer range has an increasing in the diameter of grains from 10.5 to 18.3 nm as a function of annealing temperature results in a red shift in the cut-off wavelength of the photodetector from 3.25 eV (381 nm) to 3.23 eV (383 nm). It is demonstrated that the sensitivity and the speed (rise/fall times) of the ZnO thin film based MSM photodetectors enhances with increasing post growth annealing temperature of ZnO thin film due to the increase in the absorption coefficient and the decrease of the total area of the grain boundaries due to the larger grain sizes formation in ZnO thin films with increasing thermal annealing temperature.

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

THE STUDY OF Pd SCHOTTKY CONTACT ON POROUS GaN FOR UV METAL–SEMICONDUCTOR–METAL (MSM) PHOTODETECTORS

2007 ◽  
Vol 16 (04) ◽  
pp. 497-503 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Tensile Stress ◽  
Molecular Beam ◽  
Schottky Contact ◽  
Nitrogen Plasma ◽  
Porous Sample ◽  
Optical Studies ◽  
High Quality ◽  
Metal Semiconductor Metal ◽  
Msm Photodetectors

High quality unintentionally doped n-type GaN layers were grown on Si (111) substrate using AlN (about 200 nm) as buffer layer by radio frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (MBE). This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as-grown GaN. Metal–semiconductor–metal (MSM) photodiode was fabricated on the samples. For as-grown GaN-based MSM, the detector shows a sharp cut-off wavelength at 362 nm, with a maximum responsivity of 0.254 A/W achieved at 360 nm. For porous GaN MSM detector, a sharp cut-off wavelength at 360 nm with a maximum responsivity of 0.655 A/W was achieved at 359 nm. Both the detectors show a little decrease in responsivity in the UV spectral region. The MSM photodiode based on porous GaN shows enhanced (2×) magnitude of responsivity relative to the as-grown GaN MSM photodiode. Enhancement of responsivity can be attributed to the relaxation of tensile stress and reduction of surface pit density in the porous sample.

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