Infrared Lattice Vibrations of Nitrogen-doped ZnO Thin Films

2007 ◽  
Vol 1035 ◽  
Author(s):  
Makoto Hirai ◽  
Ashok Kumar
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Bond Length ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Lattice Vibrations ◽  
Zno Thin Film ◽  
Ft Ir ◽  
Doped Zno ◽  
Axis Length

AbstractNitrogen (N) is the most promising p-type dopant for zinc oxide (ZnO), and its bonding state must be governed by the substitution of N atoms into anion sites. We have synthesized un-doped ZnO and N-doped ZnO thin films by utilizing a pulsed laser deposition (PLD) method. The N-doped ZnO thin film possessed shorter c-axis length than the un-doped ZnO thin film. This fact seems to be owing to that Zn-N bond length is shorter than Zn-O bond length in wurtzite structure. Besides, from the result of Fourier transform infrared (FT-IR) measurement, the absorption peak of the N-doped ZnO thin film emerged at 406 cm−1, and was attributed to transverse optical (TO) phonon of E1 mode. The infrared lattice vibrations of the N-doped ZnO thin films can be induced by the complex factors consisting of not only the decreases in reduced mass and interionic distance, but also the increase in covalency.

Silver Doped Zinc Oxide Thin Film Production by Thermionic Vacuum Arc (TVA) Technique

2021 ◽  
Vol 43 (3) ◽  
pp. 253-253
Author(s):  
Mehmet zkan Mehmet zkan ◽  
Sercen Sadik Erdem Sercen Sadik Erdem
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Band Gap ◽  
Glass Substrate ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Thermionic Vacuum Arc

In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.

Properties of indium doped nanocrystalline ZnO thin films and their enhanced gas sensing performance

RSC Advances ◽  
2015 ◽  
Vol 5 (75) ◽  
pp. 61230-61238 ◽  
Author(s):  
Sumati Pati ◽  
P. Banerji ◽  
S. B. Majumder
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Gas Sensing ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Indium Concentration ◽  
Doped Zno ◽  
Undoped Counterpart ◽  
Sensing Performance

Enhancement of gas sensing performance of indium doped ZnO thin film at optimal indium concentration as compared to its undoped counterpart.

scholarly journals Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
I. Saurdi ◽  
M. H. Mamat ◽  
M. F. Malek ◽  
M. Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Nanorod ◽  
Zno Thin Film ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Doped Zno

Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm), high average transmittance (96%) in visible region, and good resistivity7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.

scholarly journals Sensing of Ethanol with Nanosize Fe-ZnO Thin Films

2009 ◽  
Vol 2009 ◽  
pp. 1-3 ◽  
Author(s):  
G.-H. Kuo ◽  
H. Paul Wang ◽  
H. H. Hsu ◽  
James Wang ◽  
Y. M. Chiu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Sensitivity ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Main Compound ◽  
Doped Zno ◽  
Very High

Sensing of ethanol with iron doped ZnO (Fe-ZnO) thin films has been studied in this work. By X-ray diffraction spectroscopy, it is found that ZnO is the main compound in the low-iron (<10%) doped ZnO thin films.ZnFe2O4is also found as 20–50% of iron are doped on the thin films. The 5% Fe-ZnO thin film has a very high sensitivity (Rair/Rethanol>70) to 1000 ppm of ethanol at 300 K. It seems that iron can promote the sensivity of the ZnO thin film. The thin film doped with a greater amount (20–50%) of iron has, however, a much less sensitivity (<15) to ethanol. The chemical interactions between oxygen of ethanol and zinc on the Fe-ZnO thin film cause changes of the bond distances of Zn–O and Fe–O in the thin films to 1.90 and 1.98 Å which can be restored to 1.91 and 1.97 Å, respectively, in the absence of ethanol.

Effect of Si Layer in The ZnO Thin Films by Pulsed Laser Deposition

2003 ◽  
Vol 764 ◽  
Author(s):  
Hong Seong Kang ◽  
Jeong Seok Kang ◽  
Jae Won Kim ◽  
Sang Yeol Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Structural Properties ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Zno Thin Film

AbstractZnO thin films and ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300°C in oxygen ambient pressure. The optical and structural properties changed by Si layer in ZnO thin film. UV and visible peak position was shifted by Si layer. Electrical properties of the films were improved slightly than ZnO thin film without Si layer. The optical and structural properties of ZnO thin films and ZnOSi-ZnO multi-layer thin films were characterized by PL (Photoluminescence) and XRD(X-ray diffraction method), respectively. Electrical properties were measured by van der Pauw Hall measurements.

scholarly journals Studies on the Surface and Optical Properties of Ta-Doped ZnO Thin Films Deposited By Thermionic Vacuum Arc

2021 ◽  
Author(s):  
Suat Pat ◽  
Reza Mohammadigharehbagh ◽  
Nihan Akkurt ◽  
Şadan Korkmaz
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Si Substrate ◽  
Crystal Network ◽  
Doped Zno

Abstract In this research, Ta doped ZnO thin films have been deposited onto glass and Si substrate by Thermionic vacuum arc (TVA) thin film deposition system. TVA is anodic plasma thin film deposition system and it is used to relatively high-quality thin films deposition. ZnO thin films have direct optical band gap of 3.37 eV. Tantalum is an efficient higher-valance element. Ta atom gives the more electrons compared to Zinc atom and their ionic radius are very close to each other, so substituted element does not bring into additional stress in crystal network. The deposited thin films were analyzed by field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy, atomic force microscopy, UV-Vis spectrophotometry and interferometer. To change the band gap properties of the ZnO thin film, Ta doping was used and band gap of Ta doped ZnO thin film was obtained 3.1 eV by Tauc’s method. The wt % ratios for Zn/Ta were calculated as 0.45 and 0.42 for the films deposited onto glass and Si substrate, respectively. Crystallite sizes of Ta doped ZnO thin film was decreased by changing substrate material. To the best of our knowledge, substituted Ta elements connected to the oxygen atom in crystal network and orthorhombic β′-Ta2O5 were detected in the all films structure. Their band gaps of the β′-Ta2O5 were measured as 2.70 eV and 2.60 eV for Ta-doped ZnO thin films deposited onto glass and Si substrate, respectively. Up to day, the band gap of the β′-Ta2O5 was calculated by density function theory. According to results, β′-Ta2O5 structure was found as embedded from in the ZnO crystal network.

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

Electroreflectance study of antimony doped ZnO thin films grown by pulsed laser deposition

2021 ◽  
Vol 120 ◽  
pp. 111461
Author(s):  
Sukittaya Jessadaluk ◽  
Narathon Khemasiri ◽  
Prapakorn Rattanawarinchai ◽  
Navaphun Kayunkid ◽  
Sakon Rahong ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Doped Zno

Plasma Pre-Treatment of Polyethylene Terephthalate Substrate Influence on the Properties of ZnO Thin Film

2014 ◽  
Vol 895 ◽  
pp. 41-44
Author(s):  
Seiw Yen Tho ◽  
Kamarulazizi Ibrahim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Polyethylene Terephthalate ◽  
Contact Angle Measurement ◽  
Angle Measurement ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Water Contact ◽  
Pre Treatment ◽  
Pet Substrate

In this work, the influences of plasma pre-treatment on polyethylene terephthalate (PET) substrate to the properties of ZnO thin film have been carried out. ZnO thin films were successfully grown on PET substrate by spin coating method. In order to study the effects of plasma pre-treatment, a comparison of treated and untreated condition was employed. Water contact angle measurement had been carried out for PET wettability study prior to ZnO thin film coating. Morphology study of ZnO thin film was performed by scanning probe microscope (SPM). Besides, optical study of the ZnO thin film was done by using UV-vis spectrophotometer. All the measured results show that plasma pre-treatment of PET substrate plays an important role in enhancing the wettability of PET and optical properties of the ZnO thin films. In conclusion, pre-treatment of PET surface is essential to produce higher quality ZnO thin film on this particular substrate in which would pave the way for the integration of future devices.

Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition

2002 ◽  
Vol 420-421 ◽  
pp. 107-111 ◽  
Author(s):  
H Kim ◽  
J.S Horwitz ◽  
S.B Qadri ◽  
D.B Chrisey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Doped Zno
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