Fluorescence Detection of DNA Hybridization Using an Integrated Thin-Film Amorphous Silicon n-i-p Photodiode

2008 ◽  
Vol 1066 ◽  
Author(s):  
Alexandra Pimentel ◽  
R. Cabeça ◽  
M. Rodrigues ◽  
D.M.F. Prazeres ◽  
V. Chu ◽  
...  

ABSTRACTThis paper presents the fluorescence detection of DNA hybridization with a surface immobilized probe using an hydrogenated amorphous silicon photosensor. This sensor integrates a SiO2 layer for DNA probe immobilization, a p-i-n amorphous silicon (a-Si:H) photodiode for fluorescence detection and a fluorescence filter of amorphous silicon carbon (a-SiC:H) to cut the excitation light. With this integrated photosensor system, a five order of magnitude difference was obtained in the signal measured at the emission wavelength and that measured at the excitation wavelength for the same incident photon flux. The fluorophore Alexa Fluor 430 was used to label the DNA target molecules and a laser at 405 nm and a photon flux of 5.7×1016 cm−2.s−1 was used as the excitation light source. The detection limit achieved for fluorophores in solution in contact with the device and for fluorophores immobilized on the device surface is 5×10−9 M and 0.4 pmol/cm2, respectively. The fluorescence detection of the DNA target hybridization with a covalently or electrostatically immobilized probe was successfully detected at a surface density of ∼3 pmol/cm2.

The Analyst ◽  
2011 ◽  
Vol 136 (9) ◽  
pp. 1859 ◽  
Author(s):  
Larbi Touahir ◽  
Elisabeth Galopin ◽  
Rabah Boukherroub ◽  
Anne Chantal Gouget-Laemmel ◽  
Jean-Noël Chazalviel ◽  
...  

1978 ◽  
Vol 234 (1) ◽  
pp. R34-R38
Author(s):  
T. Uchikawa ◽  
A. B. Borle

This paper describes a method to measure calcium fluxes and calcium exchangeable pools in tissue slices by continuous perifusion in flow-through chambers. 45Ca desaturation from rat kidney slices can be analyzed as in an open three-compartment catenary system. A set of equations is given to calculate all the relevant kinetic parameters from the triple exponential equations which best fit the desaturation curves. The results show that the kinetic parameters obtained in kidney slices by this new method are in the same order of magnitude as those previously observed in cultured monkey kidney cells.


Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 354
Author(s):  
Qianqian Liu ◽  
Xiaoxuan Chen ◽  
Hongliang Li ◽  
Yanqing Guo ◽  
Jie Song ◽  
...  

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.


1996 ◽  
Vol 424 ◽  
Author(s):  
R. E. I. Schropp ◽  
K. F. Feenstra ◽  
C. H. M. Van Der Werf ◽  
J. Holleman ◽  
H. Meiling

AbstractWe present the first thin film transistors (TFTs) incorporating a low hydrogen content (5 - 9 at.-%) amorphous silicon (a-Si:H) layer deposited by the Hot-Wire Chemical Vapor Deposition (HWCVD) technique. This demonstrates the possibility of utilizing this material in devices. The deposition rate by Hot-Wire CVD is an order of magnitude higher than by Plasma Enhanced CVD. The switching ratio for TFTs based on HWCVD a-Si:H is better than 5 orders of magnitude. The field-effect mobility as determined from the saturation regime of the transfer characteristics is still quite poor. The interface with the gate dielectric needs further optimization. Current crowding effects, however, could be completely eliminated by a H2 plasma treatment of the HW-deposited intrinsic layer. In contrast to the PECVD reference device, the HWCVD device appears to be almost unsensitive to bias voltage stressing. This shows that HW-deposited material might be an approach to much more stable devices.


1990 ◽  
Vol 67 (1) ◽  
pp. 443-447 ◽  
Author(s):  
A. K. Darzi ◽  
U. Eicker ◽  
B. S. Wherrett ◽  
J. I. B. Wilson

Vacuum ◽  
2002 ◽  
Vol 67 (3-4) ◽  
pp. 519-523 ◽  
Author(s):  
D Gracin ◽  
M Jaksic ◽  
I Bogdanovic-Radovic ◽  
Z Medunic ◽  
T Car ◽  
...  

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