scholarly journals Optical Diagnostics for a High.Power, RF-Inductively Coupled Plasma

1988 ◽  
Vol 117 ◽  
Author(s):  
N. S. Nogar ◽  
G. L. Keaton ◽  
J. E. Anderson ◽  
M. Trkula
Keyword(s):  
Flow Rate ◽  
Inductively Coupled Plasma ◽  
Emission Spectroscopy ◽  
Local Thermodynamic Equilibrium ◽  
Laser Induced Fluorescence ◽  
Rf Power ◽  
Inductively Coupled ◽  
Spatially Resolved ◽  
Hull Design ◽  
Ar Gas

AbstractEmission spectroscopy and laser-induced fluorescence have been used to monitor the field and tail-flame regions of a Hull-design 1 inductively coupled plasma. This plasma is used for a variety of syntheses 2,3 including SiC, TiC, BN, AlN and diamond. Temporallyand spatially-resolved spectra of both pure Ar and Ar/gas mixtures have been studied as a function of RF power, pressure and flow rate. Preliminary data suggest that the system is far from local thermodynamic equilibrium.

Atomic Emission of Chlorine: Spectra from 200 to 900 nm by Sealed Inductively Coupled Plasma-Atomic Emission Spectroscopy

1994 ◽  
Vol 48 (3) ◽  
pp. 382-386 ◽  
Author(s):  
Tracey Jacksier ◽  
Ramon M. Barnes
Keyword(s):  
Flow Rate ◽  
Atmospheric Pressure ◽  
Inductively Coupled Plasma ◽  
Emission Spectroscopy ◽  
Atomic Emission ◽  
Molecular Spectra ◽  
Plasma Atomic Emission ◽  
Inductively Coupled ◽  
Spectral Evaluation ◽  
Atomic Chlorine

Eighty-seven atomic chlorine lines and chlorine molecular spectra emitted in the 200–900 nm wavelength range are identified in a pure chlorine discharge generated at atmospheric pressure in a sealed inductively coupled plasma. Only small quantities of chlorine are needed for spectral evaluation because the flow rate is typically less than 20 mL/min.

Characterization of a‐SiNx Thin Film Deposited By Inductively Coupled Plasma Enhanced Chemical Vapor Deposition

1996 ◽  
Vol 446 ◽  
Author(s):  
Sang‐Soo Han ◽  
Byung‐Hyuk Jun ◽  
Kwangsoo No ◽  
Byeong‐Soo Bae
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Hydrogen Content ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Rf Power ◽  
Inductively Coupled

AbstractSilicon nitride thin films are deposited at low temperature using the inductively coupled plasma enhanced chemical vapor deposition.(ICP‐CVD) N2 and SiH4 gases are used as reactant gases for deposition of silicon nitride thin films with low hydrogen content. Composition, refractive index, and hydrogen content of the films were examined with variation of N2 flow rate, RF power and substrate temperature. As N2 flow rate and RF power increase and substrate temperature is lowered, N/Si ratio is reduced producing higher refractive index of the film. Hydrogen content of the films is calculated by FTIR spectroscopy and is much less than those of the films deposited by conventional PECVD using SiH4/N2 gases since N2 gas is used instead of NH3 gas. Total hydrogen content is constant regardless of RF Power and N2 flow rate. However, the hydrogen content decreases with increasing substrate temperature due to the release of hydrogen at high temperature.

Improvement of Hydrophobic Properties of the Electrospun PVA Fabrics by SF6 Plasma Treatment

2008 ◽  
Vol 55-57 ◽  
pp. 625-628 ◽  
Author(s):  
A. Thongphud ◽  
Boonchoat Paosawatyanyong ◽  
P. Visal-athaphand ◽  
Pitt Supaphol
Keyword(s):  
Contact Angle ◽  
Plasma Treatment ◽  
Flow Rate ◽  
Inductively Coupled Plasma ◽  
Solution Concentration ◽  
Poly Vinyl Alcohol ◽  
Rf Power ◽  
Hydrophobic Properties ◽  
Inductively Coupled ◽  
Pva Solutions

Electrospun fabrics, prepared from 5, 7 and 10%w/v were Poly(vinyl alcohol) (PVA) solutions successfully prepared. The electrospinning condition was 15 kV, distance 15 cm, flow rate of 1 ml/hr and spinning time of 5 hours. Physical properties of electrospun PVA fabrics were analysed by SEM, FE-SEM and contact angle measurement.The contact angle of the electrospun PVA fabrics was 54.5°, characterizing the hydrophilicity of the fabrics. Hydrophobic properties of the electrospun PVA fabrics were improved by plasma treatment using radio frequency inductively coupled plasma (RF-ICP). RF-ICP plasma treatment of the electrospun PVA fabrics were carried out sulphurhexafluorene (SF6) gas with pressure of 0.5 Torr, RF power of 30W and treating time of 30, 60, 90 and 120 seconds. Effects of the PVA solution concentration and plasma treating time on hydrophobicity of the electrospun PVA fabrics were determined by contact angle that result of contact angle of treated fabrics increased when treated time increased and they decreased when concentration of fabrics increased.

Inductively Coupled Plasma Etching of Pt/Ti Electrodes in Cl-Based Plasma

2013 ◽  
Vol 721 ◽  
pp. 346-349
Author(s):  
Zhi Qin Zhong ◽  
Cheng Tao Yang ◽  
Guo Jun Zhang ◽  
Shu Ya Wang ◽  
Li Ping Dai
Keyword(s):  
Process Parameters ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Dry Etching ◽  
Rf Power ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
High Etch Rate ◽  
Ar Gas

Dry etching of Pt/Ti film was carried out using Cl2/Ar plasmas in an inductively coupled plasma (ICP) reactor. The influence of the various process parameters, such as RIE power, ICP power and Cl2/Ar gas mixing ratio, on the etch rate and selectivity of photoresist to Pt/Ti film were investigated systematically and optimized. It was revealed that the etch rate and the selectivity strongly depended on the key process parameters. The etch rate was found to increase dramatically with increasing of RIE power and ICP power. But by changing the ratio of Cl2 to the total gas, the maximum etch rate could be obtained at the proper ratio of 20%. The results also indicated too low or too high RIE power and the Cl2 ratio was detrimental to the selectivity. The optimized parameters of Pt/Ti dry etching for high etch rate and low selectivity of photoresist to Pt/Ti were obtained to be pressure: 10mT, RF power: 250W, ICP power: 0W, Cl2: 8sccm (standard cubic centimeters per minute), Ar: 32sccm.

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