Measuring Local Mechanical Properties using FIB Machined Cantilevers

2009 ◽  
Vol 1185 ◽  
Author(s):  
David Edward John Armstrong ◽  
Angus Jonathan Wilkinson ◽  
Steve George Roberts
Keyword(s):  
Grain Boundary ◽  
Single Crystal ◽  
Focused Ion Beam ◽  
Size Dependence ◽  
Ion Beam ◽  
Polycrystalline Copper ◽  
Sharp Notch ◽  
Single Grain ◽  
Bismuth Alloy ◽  
Good Agreement

AbstractMicro-scale Focused Ion Beam (FIB) machined cantilevers were manufactured in single crystal copper, polycrystalline copper and a copper-bismuth alloy. These were imaged and tested in bending using a nanoindenter. Cantilevers machined inside a single grain of polycrystalline copper were tested to determine their (anisotropic) Young's modulus: results were in good agreement with values calculated from literature values for single crystal elastic constants. The size dependence of yield behavior in the Cu microcantilevers was also investigated. As the thickness of the specimen was reduced from 23μm to 1.7μm the yield stress increased from 300MPa to 900MPa. Microcantilevers in Cu-0.02%Bi were manufactured containing a single grain boundary of known character, with a FIB-machined sharp notch on the grain boundary. The cantilevers were loaded to fracture allowing the fracture toughness of grain boundaries of different misorientations to be determined.

Influence of Domain Structure on Magnetoresistance in Perovskite Manganite Grain Boundary Junctions

2001 ◽  
Vol 674 ◽  
Author(s):  
Robert Gunnarsson ◽  
Anatoli Kadigrobov ◽  
Zdravko Ivanov
Keyword(s):  
Grain Boundary ◽  
Temperature Dependence ◽  
Focused Ion Beam ◽  
Domain Walls ◽  
Ion Beam ◽  
Perovskite Manganite ◽  
Current Voltage ◽  
Single Grain ◽  
Current Voltage Characteristics ◽  
The Impact

ABSTRACTWe have been able to deduce a temperature dependence of the built-in potential in La2/3Sr1/3MnO3 grain boundary junctions. This has been performed by trimming a single grain boundary down to 1μm width with a focused ion-beam. We can thereby see the impact of single domain walls on the magnetoresistance and the current-voltage characteristics. We have also demonstrated the effect of averaging as we increased the number of junctions.

Single Grain Boundary Break Junction for Suspended Nanogap Electrodes with Gapwidth Down to 1–2 nm by Focused Ion Beam Milling

2015 ◽  
Vol 27 (19) ◽  
pp. 3002-3006 ◽  
Author(s):  
Ajuan Cui ◽  
Zhe Liu ◽  
Huanli Dong ◽  
Yujin Wang ◽  
Yonggang Zhen ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Break Junction ◽  
Single Grain ◽  
Nanogap Electrodes ◽  
Focused Ion Beam Milling

Measuring anisotropy in Young’s modulus of copper using microcantilever testing

2009 ◽  
Vol 24 (11) ◽  
pp. 3268-3276 ◽  
Author(s):  
David E.J. Armstrong ◽  
Angus J. Wilkinson ◽  
Steve G. Roberts
Keyword(s):  
Young’S Modulus ◽  
Focused Ion Beam ◽  
Young's Modulus ◽  
Ion Beam ◽  
Copper Sample ◽  
Critical Aspect ◽  
Electron Backscattered Diffraction ◽  
Single Grain ◽  
Fixed End ◽  
Good Agreement

Focused ion beam machining was used to manufacture microcantilevers 30 μm by 3 μm by 4 μm with a triangular cross section in single crystal copper at a range of orientations between. These were imaged and tested using AFM/nanoindentation. Each cantilever was indented multiple times at a decreasing distance away from the fixed end. Variation of the beam’s behavior with loading position allowed a critical aspect ratio (loaded length:beam width) of 6 to be identified above which simple beam approximations could be used to calculate Young’s modulus. Microcantilevers were also milled within a single grain in a polycrystalline copper sample and electron backscattered diffraction was used to identify the direction of the long axis of the cantilever. The experimentally measured values of Young’s modulus and their variation with orientation were found to be in good agreement with the values calculated from the literature data for bulk copper.

Experimental Measurements of Grain Boundary Rotation Toward Bamboo in Post-Pattern Annealing

1996 ◽  
Vol 428 ◽  
Author(s):  
D. L. Barr ◽  
W. L. Brown ◽  
M. Ohring
Keyword(s):  
Grain Boundary ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Experimental Measurements ◽  
Statistical Distributions ◽  
Before And After ◽  
Boundary Rotation ◽  
Inclination Angles ◽  
Single Grain ◽  
Line Direction

AbstractThe microstructure of 0.8.µm, A1(0.5% Cu) lines has been measured both before and after post-pattern annealing in nitrogen at various times and temperatures. Grain boundary inclinations in single grain segments of lines were determined from Focused Ion Beam (FIB) images of two surfaces of the lines. The statistical distributions of inclination angles before and after annealing reveal the tendency for boundaries to rotate to reduce their area. In these experiments the rotation stagnates with the normals to the grain boundaries having a distribution of inclinations with a FWHM of about 33 degrees around the line direction.

Compression of Single-Crystal Micropillars of the Γ Intermetallic Phase in the Fe-Zn System

2014 ◽  
Vol 922 ◽  
pp. 264-269 ◽  
Author(s):  
Masahiro Inomoto ◽  
Norihiko L. Okamoto ◽  
Haruyuki Inui
Keyword(s):  
Single Crystal ◽  
Deformation Behavior ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Intermetallic Phase ◽  
Gamma Phase ◽  
Compression Tests ◽  
Slip Direction ◽  
Beam Method

The deformation behavior of the Γ (gamma) phase in the Fe-Zn system has been investigated via room-temperature compression tests of single-crystal micropillar specimens fabricated by the focused ion beam method. Trace analysis of slip lines indicates that {110} slip occurs for the specimens investigated in the present study. Although the slip direction has not been uniquely determined, the slip direction might be <111> in consideration of the crystal structure of the Γ phase (bcc).

Fabrication of $\bf NdBa_{2}Cu_{3}O_{7-{\ninmbi \delta}}$ (110)-(001) Grain Boundary Josephson Junction by Focused Ion Beam Method

1997 ◽  
Vol 36 (Part 2, No. 6B) ◽  
pp. L764-L766 ◽  
Author(s):  
Yuuji Mizuno ◽  
Yoshihiro Ishimaru ◽  
Jianguo Wen ◽  
Youichi Enomoto
Keyword(s):  
Grain Boundary ◽  
Josephson Junction ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Method

Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

2018 ◽  
Vol 1 (2) ◽  
pp. 115-123 ◽  
Author(s):  
Zhongdu He ◽  
Zongwei Xu ◽  
Mathias Rommel ◽  
Boteng Yao ◽  
Tao Liu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Focused Ion Beam ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Implantation Dose ◽  
Formation Mechanisms ◽  
Schematic Model ◽  
Dose Threshold ◽  
Before And After

In order to investigate the damage in single-crystal 6H-silicon carbide (SiC) in dependence on ion implantation dose, ion implantation experiments were performed using the focused ion beam technique. Raman spectroscopy and electron backscatter diffraction were used to characterize the 6H-SiC sample before and after ion implantation. Monte Carlo simulations were applied to verify the characterization results. Surface morphology of the implantation area was characterized by the scanning electron microscope (SEM) and atomic force microscope (AFM). The ‘swelling effect’ induced by the low-dose ion implantation of 1014−1015 ions cm−2 was investigated by AFM. The typical Raman bands of single-crystal 6H-SiC were analysed before and after implantation. The study revealed that the thickness of the amorphous damage layer was increased and then became saturated with increasing ion implantation dose. The critical dose threshold (2.81 × 1014−3.26 × 1014 ions cm−2) and saturated dose threshold (˜5.31 × 1016 ions cm−2) for amorphization were determined. Damage formation mechanisms were discussed, and a schematic model was proposed to explain the damage formation.

The evaluation of the composition dependence of fracture toughness of Al3Nb alloys by using micro-size fracture testing

MRS Advances ◽  
2017 ◽  
Vol 2 (26) ◽  
pp. 1405-1410
Author(s):  
Nobuhiro Matsuzaki ◽  
Ken-ichi Ikeda ◽  
Seiji Miura ◽  
Nobuaki Sekido ◽  
Takahito Ohmura
Keyword(s):  
Fracture Toughness ◽  
Single Crystal ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Two Phase ◽  
Fracture Testing ◽  
Average Value ◽  
Chevron Notch ◽  
Polycrystalline Alloys ◽  
Oxidation Resistant

ABSTRACTAl3Nb is known as a high oxidation resistant material, while it is quite brittle. As the fracture toughness of Al3Nb single crystal and its dependence on the composition are not obtained, the micro-sized fracture testing proposed by Suzuki et al. was performed. Al3Nb single crystal micron-order size cantilevers with a chevron-notch were fabricated in a grain of two-phase polycrystalline alloys by using FIB (Focused Ion Beam). From the load-displacement curves during the bending by a nanoindenter, the average value of fracture toughness of Nb-rich Al3Nb is evaluated to be 2.90 MPam1/2, while the fracture toughness of Al-rich Al3Nb is also evaluated to be 2.82 MPam1/2. From this result, the fracture toughness of Al3Nb is less dependent on its Al/Nb ratio. Furthermore the fracture toughness of Al3 (Nb, V) was evaluated to be 2.82 MPam1/2.The fracture toughness of Al3Nb is seemingly insensitive to V addition.

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