Experimental Measurements of Grain Boundary Rotation Toward Bamboo in Post-Pattern Annealing

1996 ◽  
Vol 428 ◽  
Author(s):  
D. L. Barr ◽  
W. L. Brown ◽  
M. Ohring
Keyword(s):  
Grain Boundary ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Experimental Measurements ◽  
Statistical Distributions ◽  
Before And After ◽  
Boundary Rotation ◽  
Inclination Angles ◽  
Single Grain ◽  
Line Direction

AbstractThe microstructure of 0.8.µm, A1(0.5% Cu) lines has been measured both before and after post-pattern annealing in nitrogen at various times and temperatures. Grain boundary inclinations in single grain segments of lines were determined from Focused Ion Beam (FIB) images of two surfaces of the lines. The statistical distributions of inclination angles before and after annealing reveal the tendency for boundaries to rotate to reduce their area. In these experiments the rotation stagnates with the normals to the grain boundaries having a distribution of inclinations with a FWHM of about 33 degrees around the line direction.

Influence of Domain Structure on Magnetoresistance in Perovskite Manganite Grain Boundary Junctions

2001 ◽  
Vol 674 ◽  
Author(s):  
Robert Gunnarsson ◽  
Anatoli Kadigrobov ◽  
Zdravko Ivanov
Keyword(s):  
Grain Boundary ◽  
Temperature Dependence ◽  
Focused Ion Beam ◽  
Domain Walls ◽  
Ion Beam ◽  
Perovskite Manganite ◽  
Current Voltage ◽  
Single Grain ◽  
Current Voltage Characteristics ◽  
The Impact

ABSTRACTWe have been able to deduce a temperature dependence of the built-in potential in La2/3Sr1/3MnO3 grain boundary junctions. This has been performed by trimming a single grain boundary down to 1μm width with a focused ion-beam. We can thereby see the impact of single domain walls on the magnetoresistance and the current-voltage characteristics. We have also demonstrated the effect of averaging as we increased the number of junctions.

Single Grain Boundary Break Junction for Suspended Nanogap Electrodes with Gapwidth Down to 1–2 nm by Focused Ion Beam Milling

2015 ◽  
Vol 27 (19) ◽  
pp. 3002-3006 ◽  
Author(s):  
Ajuan Cui ◽  
Zhe Liu ◽  
Huanli Dong ◽  
Yujin Wang ◽  
Yonggang Zhen ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Break Junction ◽  
Single Grain ◽  
Nanogap Electrodes ◽  
Focused Ion Beam Milling

Measuring Local Mechanical Properties using FIB Machined Cantilevers

2009 ◽  
Vol 1185 ◽  
Author(s):  
David Edward John Armstrong ◽  
Angus Jonathan Wilkinson ◽  
Steve George Roberts
Keyword(s):  
Grain Boundary ◽  
Single Crystal ◽  
Focused Ion Beam ◽  
Size Dependence ◽  
Ion Beam ◽  
Polycrystalline Copper ◽  
Sharp Notch ◽  
Single Grain ◽  
Bismuth Alloy ◽  
Good Agreement

AbstractMicro-scale Focused Ion Beam (FIB) machined cantilevers were manufactured in single crystal copper, polycrystalline copper and a copper-bismuth alloy. These were imaged and tested in bending using a nanoindenter. Cantilevers machined inside a single grain of polycrystalline copper were tested to determine their (anisotropic) Young's modulus: results were in good agreement with values calculated from literature values for single crystal elastic constants. The size dependence of yield behavior in the Cu microcantilevers was also investigated. As the thickness of the specimen was reduced from 23μm to 1.7μm the yield stress increased from 300MPa to 900MPa. Microcantilevers in Cu-0.02%Bi were manufactured containing a single grain boundary of known character, with a FIB-machined sharp notch on the grain boundary. The cantilevers were loaded to fracture allowing the fracture toughness of grain boundaries of different misorientations to be determined.

Fabrication of $\bf NdBa_{2}Cu_{3}O_{7-{\ninmbi \delta}}$ (110)-(001) Grain Boundary Josephson Junction by Focused Ion Beam Method

1997 ◽  
Vol 36 (Part 2, No. 6B) ◽  
pp. L764-L766 ◽  
Author(s):  
Yuuji Mizuno ◽  
Yoshihiro Ishimaru ◽  
Jianguo Wen ◽  
Youichi Enomoto
Keyword(s):  
Grain Boundary ◽  
Josephson Junction ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Method

Oxidation of Alloy-X in Subcritical, Transition, and Supercritical Water

CORROSION ◽  
10.5006/3881 ◽  
2021 ◽  
Author(s):  
Zachary Karmiol ◽  
Dev Chidambaram
Keyword(s):  
Supercritical Water ◽  
Photoelectron Spectroscopy ◽  
Focused Ion Beam ◽  
Elevated Temperatures ◽  
Subcritical Water ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nickel Based Superalloy ◽  
Before And After

This work investigates the oxidation of a nickel based superalloy, namely Alloy X, in water at elevated temperatures: subcritical water at 261°C and 27 MPa, the transition between subcritical and supercritical water at 374°C and 27 MPa, and supercritical water at 380°C and 27 MPa for 100 hours. The morphology of the sample surfaces were studied using scanning electron microscopy coupled with focused ion beam milling, and the surface chemistry was investigated using X-ray diffraction, Raman spectroscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy before and after exposure studies. Surfaces of all samples were identified to comprise of a ferrite spinel containing aluminum.

Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

2018 ◽  
Vol 1 (2) ◽  
pp. 115-123 ◽  
Author(s):  
Zhongdu He ◽  
Zongwei Xu ◽  
Mathias Rommel ◽  
Boteng Yao ◽  
Tao Liu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Focused Ion Beam ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Implantation Dose ◽  
Formation Mechanisms ◽  
Schematic Model ◽  
Dose Threshold ◽  
Before And After

In order to investigate the damage in single-crystal 6H-silicon carbide (SiC) in dependence on ion implantation dose, ion implantation experiments were performed using the focused ion beam technique. Raman spectroscopy and electron backscatter diffraction were used to characterize the 6H-SiC sample before and after ion implantation. Monte Carlo simulations were applied to verify the characterization results. Surface morphology of the implantation area was characterized by the scanning electron microscope (SEM) and atomic force microscope (AFM). The ‘swelling effect’ induced by the low-dose ion implantation of 1014−1015 ions cm−2 was investigated by AFM. The typical Raman bands of single-crystal 6H-SiC were analysed before and after implantation. The study revealed that the thickness of the amorphous damage layer was increased and then became saturated with increasing ion implantation dose. The critical dose threshold (2.81 × 1014−3.26 × 1014 ions cm−2) and saturated dose threshold (˜5.31 × 1016 ions cm−2) for amorphization were determined. Damage formation mechanisms were discussed, and a schematic model was proposed to explain the damage formation.

Residual Stress of Focused Ion Beam-Exposed Polycrystalline Silicon

2006 ◽  
Vol 983 ◽  
Author(s):  
Kim M. Archuleta ◽  
David P. Adams ◽  
Michael J. Vasile ◽  
Julia E. Fulghum
Keyword(s):  
Residual Stress ◽  
Plane Stress ◽  
White Light ◽  
Polycrystalline Silicon ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Medium Energy ◽  
White Light Interferometry ◽  
Before And After ◽  
Beam Damage

AbstractMedium energy (30 keV) focused gallium ion beam exposure of silicon results in a compressive in-plane stress with a magnitude as large as 0.4 GPa. Experiments involve uniform irradiation of thin polysilicon microcantilevers (200 micron length) over a range of dose from 1 x 1016 to 2 x 1018 ions/cm2. The radii of curvature of microcantilevers are measured using white light interferometry before and after each exposure. The residual stress is determined from these radii and other measured properties using Stoney's equation. The large residual stress is attributed to ion beam damage, microstructural changes and implantation.

Rapid Nanomanufacturing of Metallic Break Junctions Using Focused Ion Beam Scratching and Electromigration

2010 ◽  
Vol 132 (3) ◽  
Author(s):  
Waseem Asghar ◽  
Priyanka P. Ramachandran ◽  
Adegbenro Adewumi ◽  
Mohammud R. Noor ◽  
Samir M. Iqbal
Keyword(s):  
Molecular Electronics ◽  
Electrical Transport ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Yield ◽  
Electrical Transport Properties ◽  
Metal Line ◽  
Break Junctions ◽  
Current Voltage ◽  
Before And After

Break junctions provide a direct way to interrogate electrical transport properties of molecules, in pursuit of molecular electronics devices. A number of approaches are used for the fabrication of break junctions, including optical/e-beam lithography, electromigration, mechanical control of suspended conductive electrodes/strips, and electrochemical deposition of conductive material and nanowires. All approaches either require serial and slow e-beam writing of nanoscale gaps or suffer from low-yield of nanogap electrode devices. Here, we report the use of focused ion beam (FIB) to “scratch” and remove a thin layer of gold from 3 μm wide lines. The scratch results in thinning of the metal line and subsequent current-driven electromigration results into nanogaps at precise locations with high yield of devices. Combining FIB scratching with electromigration provides an elegant approach of creating nanoscale break junctions at an exact location and with a very narrow distribution of the nanogap sizes. Current-voltage measurements are done using a probe station before and after FIB scratch, and after the breaks were formed. Most of the gaps fall within 200–300 nm range and show negligible conductivity. The approach provides a novel, rapid, and high-throughput manufacturing approach of break junction fabrication that can be used for molecular sensing.

Characterization of Single Grain Boundaries in a Bi-Doped ZnO Varistor Using a Focused Ion Beam System

2000 ◽  
Vol 39 (Part 1, No. 7B) ◽  
pp. 4493-4496 ◽  
Author(s):  
Junji Tanimura ◽  
Osamu Wada ◽  
Hiroshi Kurokawa ◽  
Naomi Furuse ◽  
Masahiro Kobayashi
Keyword(s):  
Grain Boundaries ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Varistor ◽  
Beam System ◽  
Single Grain ◽  
Doped Zno
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