Some Thermodynamic Properties of NiAl Calculated by Molecular Dynamics Simulations

1988 ◽  
Vol 133 ◽  
Author(s):  
P. C. Clapp ◽  
M. J. Rubins ◽  
S. Charpenay ◽  
J. A. Rifkin ◽  
Z. Z. Yu ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Free Energy ◽  
Boundary Energy ◽  
Alloy System ◽  
Embedded Atom Method ◽  
Interatomic Potentials ◽  
Surface Energies ◽  
Embedded Atom ◽  
Dynamics Simulations ◽  
Anti Phase Boundary

ABSTRACTCalculations of the surface free energy and anti-phase boundary energy as a function of low index orientations and temperature have been determined for equiatomic perfectly ordered bcc NiAl via molecular dynamics computer simulations. The simulations utilized an Embedded Atom Method calculation of the interatomic potentials and volume forces in the Ni-As alloy system. Values of about 0.95, 1.6, 1.9 and 2.0 J/m2 were found for surface energies of the {100}, {110}, {112} and {111} orientations:, respectively. APB energies of about 0.24 and 0.38 J/m2 were determined for {110} and {112} boundaries, respectively. In addition, we have examined the phase stability and relative energies of the ordered bcc, fcc and bct phases at low temperature, and find a bct phase with c/a = 1.32 slightly lower in energy than the bcc, presaging the martensitic transformation that occurs at finite temperatures in more nickel rich alloys.

Molecular-Dynamics Study of the Amorphizatton of CuTi

1989 ◽  
Vol 157 ◽  
Author(s):  
Michael J. Sabochick ◽  
Nghi Q. Lam
Keyword(s):  
Molecular Dynamics ◽  
Pair Correlation ◽  
Embedded Atom Method ◽  
Interatomic Potentials ◽  
Embedded Atom ◽  
Atomic Displacements ◽  
Chemical Disorder ◽  
Radiation Induced ◽  
System Energy ◽  
Dynamics Simulations

ABSTRACTRadiation-induced amorphization of the crystalline compound CuTi was investigated by molecular-dynamics simulations using new interatomic potentials derived from the embedded-atom method. Two different approaches to amorphization were tried: one in which Cu and Ti atoms were randomly exchanged, and another in which Frenkel pairs were introduced at random. The potential energy, volume expansion and pair-correlation function were calculated as functions of chemical disorder and atomic displacements. The results indicate that, although both chemical disordering and point-defect introduction increase the system energy and volume, the presence of Frenkel pairs is essential to trigger the crystalline-to-amorphous transition.

Predicting XAFS scattering path cumulants and XAFS spectra for metals (Cu, Ni, Fe, Ti, Au) using molecular dynamics simulations

2013 ◽  
Vol 20 (4) ◽  
pp. 555-566 ◽  
Author(s):  
M. A. Karolewski ◽  
R. G. Cavell ◽  
R. A. Gordon ◽  
C. J. Glover ◽  
M. Cheah ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Md Simulations ◽  
Embedded Atom Method ◽  
Interatomic Potentials ◽  
Embedded Atom ◽  
Scaling Parameters ◽  
Order Of Magnitude ◽  
Experimental Errors ◽  
Dynamics Simulations ◽  
X Ray Absorption

The ability of molecular dynamics (MD) simulations to support the analysis of X-ray absorption fine-structure (XAFS) data for metals is evaluated. The low-order cumulants (ΔR, σ2,C3) for XAFS scattering paths are calculated for the metals Cu, Ni, Fe, Ti and Au at 300 K using 28 interatomic potentials of the embedded-atom method type. The MD cumulant predictions were evaluated within a cumulant expansion XAFS fitting model, using global (path-independent) scaling factors. Direct simulations of the corresponding XAFS spectra, χ(R), are also performed using MD configurational data in combination with theFEFFab initiocode. The cumulant scaling parameters compensate for differences between the real and effective scattering path distributions, and for any errors that might exist in the MD predictions and in the experimental data. The fitted value of ΔRis susceptible to experimental errors and inadvertent lattice thermal expansion in the simulation crystallites. The unadjusted predictions of σ2vary in accuracy, but do not show a consistent bias for any metal except Au, for which all potentials overestimate σ2. The unadjustedC3predictions produced by different potentials display only order-of-magnitude consistency. The accuracy of direct simulations of χ(R) for a given metal varies among the different potentials. For each of the metals Cu, Ni, Fe and Ti, one or more of the tested potentials was found to provide a reasonable simulation of χ(R). However, none of the potentials tested for Au was sufficiently accurate for this purpose.

Molecular Dynamics Simulation of Sputtering with Mmany-Body Interactions

1988 ◽  
Vol 100 ◽  
Author(s):  
Davy Y. Lo ◽  
Tom A. Tombrello ◽  
Mark H. Shapiro ◽  
Don E. Harrison
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Single Crystal ◽  
Low Energy ◽  
Dynamics Simulation ◽  
Embedded Atom Method ◽  
Many Body ◽  
Embedded Atom ◽  
Dynamics Simulations ◽  
Small Single Crystal

ABSTRACTMany-body forces obtained by the Embedded-Atom Method (EAM) [41 are incorporated into the description of low energy collisions and surface ejection processes in molecular dynamics simulations of sputtering from metal targets. Bombardments of small, single crystal Cu targets (400–500 atoms) in three different orientations ({100}, {110}, {111}) by 5 keV Ar+ ions have been simulated. The results are compared to simulations using purely pair-wise additive interactions. Significant differences in the spectra of ejected atoms are found.

Study on the structural transition of CoNi nanoclusters using molecular dynamics simulations

2018 ◽  
Vol 32 (11) ◽  
pp. 1850133
Author(s):  
J. H. Xia ◽  
Xue-Mei Gao
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Structural Transition ◽  
Correction Function ◽  
Embedded Atom Method ◽  
Embedded Atom ◽  
Analysis Technique ◽  
Dynamics Simulations ◽  
Embedded Atom Method Potential ◽  
Pair Analysis

In this work, the segregation and structural transitions of CoNi clusters, between 1500 and 300 K, have been investigated using molecular dynamics simulations with the embedded atom method potential. The radial distribution function was used to analyze the segregation during the cooling processes. It is found that Co atoms segregate to the inside and Ni atoms preferably to the surface during the cooling processes, the Co[Formula: see text]Ni[Formula: see text] cluster becomes a core–shell structure. We discuss the structural transition according to the pair-correction function and pair-analysis technique, and finally the liquid Co[Formula: see text]Ni[Formula: see text] crystallizes into the coexistence of hcp and fcc structure at 300 K. At the same time, it is found that the frozen structure of CoNi cluster is strongly related to the Co concentration.

Effects of Hydrogen on the Fracture Properties of Σ9 and Σ11 Tilt Boundaries in Nickel

1992 ◽  
Vol 278 ◽  
Author(s):  
J.E. Angelo ◽  
W.W. Gerberich ◽  
N.R. Moody ◽  
S.M. Foiles
Keyword(s):  
Molecular Dynamics ◽  
Monte Carlo ◽  
Fracture Stress ◽  
Equilibrium Distribution ◽  
Embedded Atom Method ◽  
Far Field ◽  
Fracture Properties ◽  
Embedded Atom ◽  
Tilt Boundaries ◽  
Dynamics Simulations

AbstractIn this study, the Embedded Atom Method is combined with Monte Carlo and molecular dynamics simulations to study the fracture properties of Σ9 and Σ11 tilt boundaries in nickel. The Monte Carlo simulations are used to simulate the exposure of the bicrystal to a hydrogen environment at 300° C. These simulations establish the equilibrium distribution of hydrogen at the boundaries as a function of far-field concentration. The effect of the hydrogen on the fracture process is then studied with molecular dynamics. It will be shown that the fracture stress of the Σ9 boundary is affected over a wider range of far-field concentrations than the Σ11 boundary, although the Σ11 boundary shows that catastrophic failure occurs when the sample is charged beyond a certain far-field concentration.

scholarly journals Molecular Dynamics Studies of the Melting of Copper with Vacancies amd Dislocations at High Pressures

MRS Advances ◽  
2017 ◽  
Vol 2 (48) ◽  
pp. 2597-2602 ◽  
Author(s):  
Clarence C Matthai ◽  
Jessica Rainbow
Keyword(s):  
Molecular Dynamics ◽  
Melting Temperature ◽  
Large Scale ◽  
High Pressures ◽  
Defect Density ◽  
Melting Process ◽  
Interatomic Potentials ◽  
Embedded Atom ◽  
Line Defects ◽  
Dynamics Simulations

ABSTRACTMolecular dynamics simulations of the melting process of bulk copper were performed using the Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) with the interatomic potentials being described by the embedded atom method. The aim of the study was to understand the effects of high pressures and defects on the melting temperature. The simulations were visualised using Visual Molecular Dynamics (VMD). The melting temperature of a perfect copper crystal, was found to be slightly higher than the experimentally observed value. The melting temperature as a function of pressure was determined and compared with experiment. Point and line defects, in the form of dislocations, were then introduced into crystal and the new melting temperature of the crystal determined. We find that the melting temperature decreases as the defect density is increased. Additionally, the slope of the melting temperature curve was found to decrease as the pressure was increased while the vacancy formation energy increases with pressure.

scholarly journals Effect of substrate temperature on quality of copper film catalyst substrate: A Molecular Dynamics Study

2017 ◽  
Vol 2 (2) ◽  
pp. 183 ◽  
Author(s):  
Rinaldo Marimpul
Keyword(s):  
Molecular Dynamics ◽  
Substrate Temperature ◽  
Film Growth ◽  
Copper Film ◽  
Deposition Process ◽  
Embedded Atom Method ◽  
Embedded Atom ◽  
Dynamics Simulations ◽  
Embedded Atom Method Potential

Copper film growth using thermal evaporation methods was studied using molecular dynamics simulations. The AlSiMgCuFe modified embedded atom method potential was used to describe interaction of Cu-Cu, Si-Si and Cu-Si atoms. Our results showed that the variations of substrate temperature affected crystal structure composition and surface roughness of the produced copper film catalyst substrate. In this study, we observed intermixing phenomenon after deposition process. The increasing of substrate temperature affected the increasing of the total silicon atoms had diffusion into copper film.

Viscosity of Sn-Cu Solders Investigated by Molecular Dynamics

2011 ◽  
Vol 675-677 ◽  
pp. 1011-1014
Author(s):  
Rui Fang Ding ◽  
Xue Min Pan ◽  
Guang Ling Wei
Keyword(s):  
Molecular Dynamics ◽  
Absolute Temperature ◽  
Embedded Atom Method ◽  
Temperature Zone ◽  
Structure Transition ◽  
Self Diffusion ◽  
Embedded Atom ◽  
Dynamics Simulations ◽  
Lead Free Solders ◽  
Good Agreement

The self-diffusion coefficient of Cu in Sn-1.5wt.%Cu and Sn-2wt.%Cu lead-free solders was investigated using molecular dynamics simulations based on a modified embedded-atom method from 503 K to 773 K. Then the viscosity of the solders was calculated using the selfdiffusion coefficient values, and the results were in good agreement with the experimental data. Two segments, a low-temperature zone and a high-temperature zone, were found on both η–T and lnη–1/T plots, where η is the viscosity and T is the absolute temperature. Through analysis, we infer that the viscosity mutation was attributed to the remarkable structure transition.

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