Optimization of a Tin/TiSi2 p+ Diffusion Barrier Process

1989 ◽  
Vol 146 ◽  
Author(s):  
S.S. Lee ◽  
C.S. Galovich ◽  
K.P. Fuchs ◽  
D.L. Kwong ◽  
J. Hirvonen ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing Parameters ◽  
Titanium Film ◽  
Rapid Thermal Anneal ◽  
P Diffusion ◽  
One Step ◽  
Thermal Nitridation ◽  
Metallization Process

ABSTRACTThe TiN/TiSi2 structure, formed by rapid thermal nitridation of a spatter-deposited titanium film, has been demonstrated to be effective as a diffusion barrier and as a low resistance contact material for VLSI submicron metallization. An optimization experiment, designed using the RS/Discover software package, was used to identify a metallization process that minimized p+ resistance as well as maximized barrier capability. Source/drain implant doses, as-deposited titanium film thickness, and rapid thermal processing parameters were the factors varied in the experiment. Of particular significance is a comparison of the effects of a two-step versus one-step rapid thermal anneal on control of the TiN/TiSi2 thickness ratio. A TiN layer of sufficient thickness for barrier integrity and adequate consumption of implant damage in the formation of the TiSi2 layer are desired. Electrical and thermal stability measuremints of the resultant AlSiCu/TiN/TiSi2 p+ contact system are presented.

The Effect of Multilayer Patterns on Thermal Stress During Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
Jeffrey P. Hebbi ◽  
Klavs F. Jensen
Keyword(s):  
Plastic Deformation ◽  
Thermal Stress ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing Parameters ◽  
Radiative Properties ◽  
Stress Fields ◽  
Transport Models ◽  
Patterned Wafers ◽  
Side Illumination

AbstractMultilayer patterns can lead to temperature non-uniformity and undesirable levels of thermal stress in silicon wafers during rapid thermal processing (RTP). Thermal stress can, in turn, cause problems such as photolithography overlay errors and degraded device performance through plastic deformation. In this work, the temperature and stress fields in patterned wafers are simulated using detailed finite-element based reactor transport models coupled with electromagnetic theory for predicting radiative properties of multilayers. The temperature distributions are then used to predict the stress fields in the wafer and the onset of plastic deformation. Results are presented for two generic two-dimensional axi-symmetric reactors employing single and double side illumination. The effect of patterns and processing parameters are explored, and strategies for avoiding pattern induced plastic deformation are evaluated.

Effects on TiN Film Properties of the Interaction Between Titanium and Borophosphosilicate Glass During High-Temperature Nitridation

1990 ◽  
Vol 202 ◽  
Author(s):  
C. S. Galovich ◽  
S. S. Lee ◽  
D. L. Kwong
Keyword(s):  
High Temperature ◽  
Structural Change ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Titanium Film ◽  
Film Properties ◽  
Titanium Layer ◽  
Tin Film ◽  
Borophosphosilicate Glass ◽  
Sem Analyses

ABSTRACTTitanium nitride, formed either by rapid thermal processing (RTP) or reactive sputtering, is commonly applied as a barrier film in the fabrication of metal-to-substrate contacts for CMOS devices. In one approach a titanium film is sputtered onto a patterned dielectric and then nitrided at a temperature greater than 500° C to form a TiN layer. Variations in the structure and resistivity of the titanium layer are observed when the titanium overlies a borophosphosilicate glass (BPSG) film. The structural change appears as a “wrinkling” of the TiN film and the TiN/BPSG interface. More severely wrinkled films are characterized by lower sheet resistivities. Results of TEM and SEM analyses are presented, as well as data on TiN resistivity and reflectance for nitridation temperatures in the range 650°C to 900°C, and for BPSG boron and phosphorus concentrations of approximately 3 to 5 wt. %. Mechanisms for the TiN wrinkling are discussed.

Modeling of Device Characteristics as Function of Ti Salicide Rapid Thermal Processing Parameters for Deep-Sub-Micron CMOS Technologies

1996 ◽  
Vol 429 ◽  
Author(s):  
J. A. Kittl ◽  
D. A. Prinslow ◽  
G. Misium ◽  
M. F. Pas
Keyword(s):  
Sheet Resistance ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing Parameters ◽  
Deep Submicron ◽  
Process Window ◽  
Nucleation Density ◽  
Formation Temperature ◽  
High Temperature Short Time ◽  
Anneal Temperature

AbstractRapid thermal processing is widely applied in self-aligned Ti silicide processes for deep-submicron devices. We investigated and modeled the effects of rapid thermal processing variables (silicide formation temperature and time, and anneal temperature and time) and Ti thickness on deep-sub-micron device characteristics. The effect of Ti thickness, formation temperature and time on diode leakage and bridging due to silicide lateral growth, and its correlation to silicide thickness was analyzed; as well as the effects of these and the anneal variables on n+ gate sheet resistance, silicide to source/drain contact resistance and transistor source-drain series resistance. An expression for n+ gate sheet resistance is given, as function of anneal temperature and time, silicide thickness, linewidth and TiSi2 C49 grain size after formation, based on a nucleation density model in agreement with measurements of TiSi2 C49 to C54 transformation kinetics. The tradeoffs and process window limits are discussed, as well as trends observed when scaling down lateral and vertical dimensions. We show that for advanced technologies, the scaling of silicide thickness and linewidth narrows the process window between full C49 to C54 transformation and agglomeration temperatures. Due to the high activation energy of the C49 to C54 transformation, a process window for low sheet resistance exists only for high temperature-short time processes.

Properties of Thin Inter-Polysilicon Reoxidized Nitrided Oxides Prepared by Rapid Thermal Processing (RTO/RTN/RTO)

1989 ◽  
Vol 146 ◽  
Author(s):  
Andrew W. Cheung ◽  
G. Q. Lo ◽  
Dim-Lee Kwong ◽  
N. S. Alvi ◽  
A. Kermani
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Dielectric Strength ◽  
Breakdown Field ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Thermal Oxide ◽  
Non Volatile Memory ◽  
Thermal Nitridation ◽  
Memory Applications

ABSTRACTIn the search of a high quality thin inter-polysilicon dielectric which has high breakdown voltage and low leakage current for high density non-volatile memory applications, thin (150±) inter-polysilicon reoxidized nitrided oxide capacitors were fabricated with multiple rapid thermal processing. While rapid thermal nitridation degraded the breakdown field if compared to the rapid thermal oxide capacitors, rapid thermal reoxidation greatly enhanced the dielectric strength of the rapid thermal nitrided samples. The short reoxidations increased the film thickness by less than 10 \. Breakdown field of optimized inter-polysilicon RTO/RTN/RTO capacitors up to 14 MV/cm has been measured.

Rapid Thermal Processing-Manufacturing Perspective

1995 ◽  
Vol 387 ◽  
Author(s):  
R. P. S. Thakur ◽  
K. Schuegraf ◽  
P. Fazan ◽  
H. Rhodes ◽  
R. Zahorik
Keyword(s):  
Thermal Processing ◽  
Large Diameter ◽  
Rapid Thermal Processing ◽  
Economic Benefits ◽  
Good News ◽  
Ongoing Research ◽  
Dopant Activation ◽  
Defect Control ◽  
Thermal Nitridation ◽  
Faster Development

AbstractWhile repeatable and accurate measurement of temperature in rapid thermal processing (RTP) remains a subject of ongoing research, inception of large-diameter wafers and deep subhalf micron design rules may be viewed as good news for implementing RTP during the development phase for later transfer to volume manufacturing. To date, the only well-established application of RTP in manufacturing is silicide annealing. However, research during the past decade has demonstrated the feasibility of using RTP to replace essentially all furnace-based thermal processes in sub-half micron process flows. These developments in the RTP capability offer several technological and economic benefits such as improved defect control, higher product yields, and faster development cycles for DRAM-type technologies at a reduced cost and with an earlier entry of the driver products during the revenue-generating period.In this paper, we review several applications of RTP such as silicide anneals, borophosphosilicate glass (BPSG) reflow, dopant activation, and rapid thermal nitridation (RTN) and discuss the integration issues related to advanced process flows. Furthermore, we highlight important manufacturing parameters like throughput, machine cost and uptime, software and hardware issues, wafer dimensional analysis, and simulation expectations. While considering volume manufacturing, we make some calibration and process control recommendations.

Performance and Reliability of Ultrathin Oxynitride Gate Dielectrics Prepared using In-Situ Multiple Rapid Thermal Processing

1989 ◽  
Vol 146 ◽  
Author(s):  
G. Q. Lo ◽  
D. K. Shih ◽  
W. Ting ◽  
D. L. Kwong
Keyword(s):  
Thermal Processing ◽  
Conduction Mechanism ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Charge Trapping ◽  
Processing Parameters ◽  
Time Dependent ◽  
Electrical Characteristics ◽  
Interface Hardness

ABSTRACTThe electrical characteristics of ultrathin oxynitride gate dielectrics prepared by in-situ multiple rapid thermal processing in reactive ambients (O2 and NH3) have been studied. Specifically, the conduction mechanism, charge trapping properties, time-dependent breakdown, and interface hardness in oxynitride films have been characterized as a function of both RTO and RTN processing parameters. In addition, N-channel MOSFET's have been fabricated using oxynitrides as gate dielectrics and their hot carier immunity has been examined and compared with devices with pure thermal oxides. Devices with superior electrical characteristics and reliability have been produced by optimizing RTO/RTN parameters.

Scaling of correlation length in lamellae forming PS-b-PMMA thin films upon high temperature rapid thermal treatments

2015 ◽  
Vol 3 (33) ◽  
pp. 8618-8624 ◽  
Author(s):  
M. Ceresoli ◽  
F. G. Volpe ◽  
G. Seguini ◽  
D. Antonioli ◽  
V. Gianotti ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Thermal Treatment ◽  
Correlation Length ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing Parameters ◽  
Thermal Treatments ◽  
Processing Machine

Highly ordered lamellar grains were produced by thermal treatment of the samples in a rapid thermal processing machine. The processing parameters that maximize the lateral order avoiding any degradation of the macromolecules were identified.

Aluminum-Titanium Multilayer Interconnect With Titanium Diffusion Barrier

1986 ◽  
Vol 77 ◽  
Author(s):  
S. Tong-Lee ◽  
Tzuen-Luh Huang ◽  
L. Van Den Hove ◽  
D. N. Nichols
Keyword(s):  
Diffusion Barrier ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Titanium Diffusion

ABSTRACTThe metallurgical reaction at 450°C in forming gas ambient between the Ti diffusion barrier and Al, causing the contact degradation in the Al (1% Si)-Ti multilayer interconnects has been studied. The Ti-Al reaction is reduced by preheating the Ti layer in N2 using rapid thermal processing (RTP) at 2.500°C. The curtailed reaction is attributed to the thin surface titanium oxynitride layer. It was found that a 1000-Å Ti layer inserted between the multilayer and Si is effective as a sacrificial diffusion barrier against contact degradation, but 500-Å Ti is not. RTP of the thin Ti film rendered it effective as a diffusion barrier.

A one step annealing for dopants activation, silicide resistivity lowering and glass flow by rapid thermal processing

2003 ◽  
Author(s):  
D. Gloesener ◽  
G. Rivas ◽  
B. Goffin ◽  
J.L. Coppee ◽  
F. Van de Wiele
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
One Step
Sign in / Sign up

Export Citation Format

Share Document