Effects on TiN Film Properties of the Interaction Between Titanium and Borophosphosilicate Glass During High-Temperature Nitridation

1990 ◽  
Vol 202 ◽  
Author(s):  
C. S. Galovich ◽  
S. S. Lee ◽  
D. L. Kwong
Keyword(s):  
High Temperature ◽  
Structural Change ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Titanium Film ◽  
Film Properties ◽  
Titanium Layer ◽  
Tin Film ◽  
Borophosphosilicate Glass ◽  
Sem Analyses

ABSTRACTTitanium nitride, formed either by rapid thermal processing (RTP) or reactive sputtering, is commonly applied as a barrier film in the fabrication of metal-to-substrate contacts for CMOS devices. In one approach a titanium film is sputtered onto a patterned dielectric and then nitrided at a temperature greater than 500° C to form a TiN layer. Variations in the structure and resistivity of the titanium layer are observed when the titanium overlies a borophosphosilicate glass (BPSG) film. The structural change appears as a “wrinkling” of the TiN film and the TiN/BPSG interface. More severely wrinkled films are characterized by lower sheet resistivities. Results of TEM and SEM analyses are presented, as well as data on TiN resistivity and reflectance for nitridation temperatures in the range 650°C to 900°C, and for BPSG boron and phosphorus concentrations of approximately 3 to 5 wt. %. Mechanisms for the TiN wrinkling are discussed.

Rapid Thermal Processing of III-Nitrides

1997 ◽  
Vol 470 ◽  
Author(s):  
J. Hong ◽  
J. W. Lee ◽  
C. B. Vartuli ◽  
J. D. MacKenzie ◽  
S. M. Donovan ◽  
...  
Keyword(s):  
High Temperature ◽  
Partial Pressure ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Device Fabrication ◽  
The Other ◽  
High Temperature Annealing ◽  
Surface Protection ◽  
Transient Thermal ◽  
Graphite Susceptor

ABSTRACTTransient thermal processing is employed for implant activation, contact alloying, implant isolation and dehydrogenation during III-nitride device fabrication. We have compared use of InN, AlN and GaN powder as methods for providing a N2 overpressure within a graphite susceptor for high temperature annealing of GaN, InN, A1N and InAlN. The AlN powder provides adequate surface protection to temperatures of ∼1100°C for AlN, > 1050°C for GaN, ∼600°C for InN and ∼800°C for the ternary alloy. While the InN powder provides a higher N2 partial pressure than AlN powder, at temperatures above ∼750°C the evaporation of In is sufficiently high to produce condensation of In droplets on the surfaces of the annealed samples. GaN powder achieved better surface protection than the other two cases.

Integrated Rapid Thermal CVD Processing Solutions for 0.18–0.25μm Technologies

1997 ◽  
Vol 470 ◽  
Author(s):  
H. Gilboa ◽  
Y. E. Gilboa ◽  
Z. Atzmon ◽  
S. Levy ◽  
H. Spilberg ◽  
...  
Keyword(s):  
High Temperature ◽  
Flash Memory ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Wafer Cleaning ◽  
Front End ◽  
Wafer Processing ◽  
Cluster Tool ◽  
Temperature Applications

ABSTRACTThe evolution of integrated single-wafer processing for high-temperature applications in the front end of the line (FEOL) occurred with the advancements in single-wafer rapid thermal processing and its acceptance as a manufacturing technology. The Integra RTCVD cluster tool for high-temperature applications features wafer cleaning, rapid thermal processing and single wafer chemical vapor deposition steps. The paper presents integrated vapor phase clean and RTCVD applications for FLASH memory gate stack and DRAM cell.

Characterization of Process Uniformity and Control of Titanium Silicide Formed by Rapid Thermal Processing (RTP)

1987 ◽  
Vol 92 ◽  
Author(s):  
David Hodul David Hodul ◽  
Sandeep Mehta Sandeep Mehta
Keyword(s):  
Thermal Processing ◽  
Low Temperatures ◽  
Rapid Thermal Processing ◽  
Titanium Silicide ◽  
Film Properties ◽  
Rapid Annealing ◽  
Oxygen Contamination ◽  
Process Uniformity ◽  
And Control

ABSTRACTSputtered titanium films with thicknesses in the range of 300 to 1200Å were processed in a commercial rapid annealing system to form TiSi2 films. The films were first reacted at low temperatures (500-700°C), etched in ammonia/peroxide solution, and then reacted at 850-900°C to simulate a typical self-alignedsilicide (salicide) process. A method to correctfor dynamic temperature nonuniformities and the resulting etch nonuniformities will be discussed. Sheet resistance maps of the resulting films will be presented. In addition, film properties were measured as a function of annealing ambient in particular, the effects of oxygen contamination were studied.

A GaAs Sagfet Process Using TiSi2 and Rapid Thermal Annealing

1985 ◽  
Vol 52 ◽  
Author(s):  
D. Wood ◽  
J. Mun
Keyword(s):  
Gallium Arsenide ◽  
High Temperature ◽  
Barrier Height ◽  
Ideality Factor ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Titanium Disilicide ◽  
Auger Analysis ◽  
Conventional Annealing ◽  
First Time

ABSTRACTFor the first time a combination of titanium disilicide and rapid thermal processing has been used to produce a high temperature stable gate on gallium arsenide. A barrier height of 0.79 V with an ideality factor of 1.02 has been obtained after annealing up to 800°C, and useful results are found up to 900°C. Auger analysis shows little intermixing of the silicide with the underlying substrate, which is not the case for conventional annealing. The advantages of titanium disilicide over the more commonly used tungsten silicide with regard to film resistivity and stress will be discussed. A self-aligned gate MESFET (SAGFET) process has been developed using TiSi2 as the gate material.

Optimization of a Tin/TiSi2 p+ Diffusion Barrier Process

1989 ◽  
Vol 146 ◽  
Author(s):  
S.S. Lee ◽  
C.S. Galovich ◽  
K.P. Fuchs ◽  
D.L. Kwong ◽  
J. Hirvonen ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing Parameters ◽  
Titanium Film ◽  
Rapid Thermal Anneal ◽  
P Diffusion ◽  
One Step ◽  
Thermal Nitridation ◽  
Metallization Process

ABSTRACTThe TiN/TiSi2 structure, formed by rapid thermal nitridation of a spatter-deposited titanium film, has been demonstrated to be effective as a diffusion barrier and as a low resistance contact material for VLSI submicron metallization. An optimization experiment, designed using the RS/Discover software package, was used to identify a metallization process that minimized p+ resistance as well as maximized barrier capability. Source/drain implant doses, as-deposited titanium film thickness, and rapid thermal processing parameters were the factors varied in the experiment. Of particular significance is a comparison of the effects of a two-step versus one-step rapid thermal anneal on control of the TiN/TiSi2 thickness ratio. A TiN layer of sufficient thickness for barrier integrity and adequate consumption of implant damage in the formation of the TiSi2 layer are desired. Electrical and thermal stability measuremints of the resultant AlSiCu/TiN/TiSi2 p+ contact system are presented.

Thermal Behavior of Large-Diameter Silicon Wafers during High-Temperature Rapid Thermal Processing in Single Wafer Furnace

2002 ◽  
Vol 41 (Part 1, No. 7A) ◽  
pp. 4442-4449 ◽  
Author(s):  
Woo Sik Yoo ◽  
Takashi Fukada ◽  
Ichiro Yokoyama ◽  
Kitaek Kang ◽  
Nobuaki Takahashi
Keyword(s):  
High Temperature ◽  
Thermal Behavior ◽  
Thermal Processing ◽  
Large Diameter ◽  
Rapid Thermal Processing ◽  
Silicon Wafers

Tungsten Silicide Zinc as a High Temperature Zinc Diffusion Source

1987 ◽  
Vol 92 ◽  
Author(s):  
D.L. Plumton
Keyword(s):  
High Temperature ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Halogen Lamp ◽  
Tungsten Silicide ◽  
Zn Concentration ◽  
Zinc Diffusion ◽  
Diffusion Source ◽  
Lamp System ◽  
Sputter Deposited

ABSTRACTA process for Zn diffusion into GaAs during rapid thermal processing has been developed using Zn doped tungsten silicide as the diffusion source. The WSi:Zn is a sputter deposited, solid source layer that undergoes capless annealing in a quartz-halogen lamp system. For a given time and temperature the diffusion of Zn into GaAs is controlled by both the Zn concentration and the W/Si ratio in the film. Tungsten-rich films are Zn concentration “independent” while Si-rich films are Zn concentration “dependent.” Changing the film composition allows shallow Zn diffusions at either a low or a high temperature. Deep Zn diffusions are possible through higher temperatures or longer anneal times for any given WSi:Zn composition.

Si and GexSi1−x Epitaxial Growth on SOI Structures by Rapid Thermal Processing Chemical Vapor Deposition

1991 ◽  
Vol 224 ◽  
Author(s):  
T. Y. Hsieh ◽  
K. H. Jung ◽  
D. L. Kwong ◽  
S. Lin ◽  
H. L. Marcus
Keyword(s):  
High Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Threading Dislocation ◽  
Dislocation Densities ◽  
Short Time ◽  
Defect Densities

AbstractA short time high temperature H2 pre-bake resulted in an undulating SIMOX surface, which planarized after epitaxial growth by rapid thermal processing chemical vapor deposition (RTPCVD). However, a short time, high temperature N2 pre-bake resulted in severe surface pitting. From dilute Schimmel etch results, no significant changes in the defect densities of the Si layers occurred after RTPCVD. Auger depth profiles of the SOI substrate prior to epitaxial growth show an oxygen peak in the SIMOX Si layer. However, the peak flattens out after epitaxial growth. Oxygen was not observed in the epitaxial film, even though oxygen was still observed in the SIMOX top Si layer.The use of GexSi1−x epitaxial layers to reduce threading dislocation densities was examined. A 1000°C Si buffer layer was first grown for 30s, followed by a GexSi1−x layer, and topped off by a 1000°C Si layer for 120s. The GexSi1−x layers were grown at temperatures varying from 850°C to 1000°C for 30s to 240s. The defect density was significantly reduced when the 900°C and 850°C GexSi1−x layers were used, although an increase in stacking fault densities (still small compared to threading dislocation densities) accompanied the lower deposition temperatures. The 1000°C GexSi1−x layer and a control sample in which pure Si was grown showed no significant decrease in defect densities.

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