Quaternary Phase Equilibria in the Ti-Si-N-O System: Stability of Metallization Layers and Prediction of Thin Film Reactions
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ABSTRACTDuring high temperature circuit fabrication, metallization layers can come in contact with both solids and gases. Their stability can be addressed with the aid of phase equilibria. Using the Gibbs phase rule as a basis, a method for generating phase diagrams for multicomponent systems can be established. This procedure is described and illustrated by reference to the quaternary phase diagram of Ti-Si-N-O. This phase diagram can then be used to predict stability and/or reactions in metallization layers and thin films.
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2018 ◽
Vol 61
(3)
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pp. 26
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2007 ◽
Vol 52
(1)
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pp. 244-247
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1970 ◽
Vol 28
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pp. 544-545
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1978 ◽
Vol 36
(1)
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pp. 530-531
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1991 ◽
Vol 49
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pp. 1068-1069
1991 ◽
Vol 49
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pp. 1080-1081