Quaternary Phase Equilibria in the Ti-Si-N-O System: Stability of Metallization Layers and Prediction of Thin Film Reactions

1989 ◽  
Vol 148 ◽  
Author(s):  
A.S. Bhansali ◽  
R. Sinclair

ABSTRACTDuring high temperature circuit fabrication, metallization layers can come in contact with both solids and gases. Their stability can be addressed with the aid of phase equilibria. Using the Gibbs phase rule as a basis, a method for generating phase diagrams for multicomponent systems can be established. This procedure is described and illustrated by reference to the quaternary phase diagram of Ti-Si-N-O. This phase diagram can then be used to predict stability and/or reactions in metallization layers and thin films.

1990 ◽  
Vol 187 ◽  
Author(s):  
A.S. Bhansali ◽  
I.J.M.M. Raaijmakers ◽  
R. Sinclair ◽  
A.E. Morgan ◽  
B.J. Burrow ◽  
...  

AbstractA quaternary phase diagram for Ti–W–N–Al has been calculated from existing thermodynamic data, and is used to predict the Al/TiW-nitride reaction. The predicted reaction products-TiAl3, WAl5, WAl12, and AlN—were observed by XRD and TEM in annealed Al/TiW(-nitride) thin films. The sheet resistance of Al/TiW films increased by an order of magnitude at 550°C, whereas the increase in the case of the Al/TiW-nitride films was not even two-fold. The formation of an interfacial AlN layer was observed in the Al/TiW-nitride metallization. This AlN layer limits the interaction between Al and TiW-nitride, thus providing good thermal stability.


1991 ◽  
Vol 230 ◽  
Author(s):  
Katayun Barmak ◽  
Kevin R. Coffey ◽  
David A. Rudman ◽  
Simon Foner

AbstractWe investigated the phase formation sequence in the reaction of multilayer thin films of Nb/Al with overall compositions of 25 and 33 at.% AI. We report novel phenomena which distinguish thin-film reactions unequivocally from those in bulk systems. For sufficiently thin layers composition and stability of product phases are found to deviate significantly from that predicted from the equilibrium phase diagram. We demonstrate that in the Nb/Al system the length scales below which such deviations occur is about 150 nm. We believe that these phenomena occur due to the importance of grain boundary diffusion and hence microstructure in these thin films.


Author(s):  
I. Jabborov ◽  
L. Soliev ◽  
I. Nizomov ◽  
J. Musodzonova

The article describes a study on the identification of possible phase equilibria in mutual geometrical images of five-component system of water and salt from sulfates, bicarbonates, potassium and calcium fluoride at 25 °C, followed by the construction of its phase diagram complex. Knowledge of the laws governing the structure of the phase complex of this system is necessary not only to obtain new scientific data as reference material, but also to contribute to the creation of optimal conditions for the utilization of liquid wastes of aluminum industrial production containing the system of salts that make up this system. To solve the problem, we used the translation method, which is based on the position according to which the dimension of the geometric images of the diagram of the original (private) system increases by one by adding a subsequent component, due to its concentration, i.e. are transformed. Since the investigated five-component system consists of five particular four-component systems, the addition of the fifth component to any of them is accompanied by transformations of the geometric images of all five four-component systems. Transformed geometric images according to their topological properties are broadcasted to the level of a five-component composition. At the level of the five-component composition, the transformed geometric images, in accordance with the Gibbs phase rule, intersect each other forming geometric images of a given level of componentness. Investigation of phase equilibria five-component water-salt reciprocal system of sulfates, bicarbonates, potassium and calcium fluorides and construction of its phase diagram with complex translation method (at 0°C) showed that it is characterized by fifteen divariant fields, thirteen monovariant curves, and four invariant points. On the basis of the obtained data, the complete closed phase diagram of the investigated system was constructed for the first time and, for the convenience of its reading, it is fragmented by the regions of divariant equilibria.Forcitation:Jabborov I., Soliev L., Nizomov I., Musodzonova J. Phase equilibria in system K,Са//SO4,HCO3,F-H2O at 25 °C. Izv. Vyssh. Uchebn. Zaved. Khim. Khim. Tekhnol. 2018. V. 61. N 3. P. 26-30 


2007 ◽  
Vol 52 (1) ◽  
pp. 244-247 ◽  
Author(s):  
A. V. M. Nunes ◽  
A. A. Matias ◽  
M. Nunes da Ponte ◽  
C. M. M. Duarte

Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.


Author(s):  
Dennis Maher ◽  
David Joy ◽  
Peggy Mochel

A variety of standard specimens is needed in order to systematically investigate the instrumentation, specimen, data reduction and quantitation variables in electron energy-loss spectroscopy (EELS). Pure single element specimens (e.g. various forms of carbon) have received considerable attention to date but certain elements of interest cannot be prepared directly as thin films. Since studies of the first and second row elements in two- or multicomponent systems will be of considerable importance in microanalysis using EELS, there is a need for convenient standards containing these species. For many investigations a standard should contain the desired element, or elements, homogeneously dispersed through a suitable matrix and at an accurately known concentration. These conditions may be met by the technique of implantation.Silicon was chosen as the host lattice since its principal ionization energies, EL23 = 98 eV and Ek = 1843 eV, are well removed from the K-edges of most elements of major interest such as boron (Ek = 188 eV), carbon (Ek = 283 eV), nitrogen (Ek = 400 eV) and oxygen (Ek = 532 eV).


Author(s):  
M. Grant Norton ◽  
C. Barry Carter

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.


Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.


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