Thermodynamic and Structural Properties of Mev Ion Beam Amorphized Silicon
ABSTRACTThermodynamic and structural properties of amorphous Si (a-Si), prepared by MeV 28Si+-ion implantation are investigated by differential scanning calorimetry, Raman spectroscopy and X-ray diffraction. The influence of thermal annealing below 500 °C on a-Si is investigated with these different probes. The observed changes result from structural relaxation. Raman spectroscopy and X-ray diffraction show that structural relaxation is accompanied by changes in the average atomic structure.
2012 ◽
Vol 68
(3)
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pp. 287-296
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2015 ◽
Vol 2
(1)
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pp. 13-20
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1989 ◽
Vol 283
(2)
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pp. 130-137
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2012 ◽
Vol 8
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pp. 371-378
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