Step Profile Fluctuations in Quantum-Well Wire Growth on Vicinal Surfaces

1989 ◽  
Vol 160 ◽  
Author(s):  
K.J. Hugill ◽  
T. Shitara ◽  
S. Clarke ◽  
D.D. Vvedensky ◽  
B.A. Joyce
Keyword(s):  
Quantum Well ◽  
Molecular Beam ◽  
Solid Model ◽  
Optimum Regime ◽  
Vicinal Surfaces ◽  
Quantum Well Wire ◽  
Quantum Well Wires ◽  
Edge Stability

AbstractMolecular-beam epitaxy of quantum-well wires on vicinal surfaces is studied by application of Monte Carlo simulations of a solid-on-solid model. Characterization of simulated quantum-well wires indicates an optimum regime within which the quality of the quantum-well wire is maximized. The model is extended to include observed anisotropies in GaAs growth on vicinal surfaces, and the conclusion is reached that better quality quantum-well wires may be grown on substrates misoriented from the (001) towards [110], rather than [110], due to relative step edge stability on the two misoriented surfaces.

Photoluminescence Characterization of SiGe/Si Quantum-Well Wire Structures

1995 ◽  
Vol 379 ◽  
Author(s):  
S. Nilsson ◽  
H. P. Zeindl ◽  
A. Wolff ◽  
K. Pressel
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Optical Quality ◽  
Photoluminescence Spectra ◽  
Single Quantum Well ◽  
Quantum Well Wire ◽  
Carbon Interstitial

ABSTRACTLow-temperature photoluminescence measurements were performed in order to probe the optical quality of SiGe/Si quantum-well wire structures fabricated by electron-beam lithography and subsequent reactive ion etching, having the patterned polymethylmethacrylate resist as an etch mask. In addition, one set of quantum-well wire structures was post-treated by means of annealing in a hydrogen environment. Our results show that even for the smallest wires of about 100nm in width, the wires exhibit phonon-resolved photoluminescence spectra, similar to that from the molecular beam eptitaxially grown SiGe single quantum well which was used as starting material for the patterning process. After the patterning process a new sharp peak appears in the photoluminescence spectra at 0.97eV in photon energy. Our investigation suggests that this feature is introduced by damage during the patterning process and most probably identical to the G-line, which previously was identified as originating from the dicarbon centre (substitutional carbon-interstitial carbon) in Si. This centre is known to be a very common endproduct of irradiating Si near room temperature which is the case at our patterning process.

scholarly journals Characterization of quantum well wires and surfaces gratings by X-ray diffraction reciprocal space mapping

1993 ◽  
Vol 49 (s1) ◽  
pp. c369-c370
Author(s):  
G. T. Baumbach ◽  
M. Gailhanou ◽  
U. Marti ◽  
P. Silva ◽  
M. Bessiere ◽  
...  
Keyword(s):  
Quantum Well ◽  
Space Mapping ◽  
Reciprocal Space ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Quantum Well Wires

Raman Scattering Characterization of GaAs-AlAs Superlattices Grown Along the [110] Direction

1987 ◽  
Vol 102 ◽  
Author(s):  
D. Kirillov ◽  
Yi-Ching Pao
Keyword(s):  
Raman Scattering ◽  
Molecular Beam ◽  
Transverse Optical ◽  
Crystallographic Structure ◽  
Optical Phonons ◽  
Lower Intensity ◽  
Dominant Feature ◽  
First Time

ABSTRACTRaman spectra of the GaAs-AlAs superlattice grown by molecular beam epi-taxy along the [110] direction were studied for the first time. The spectra were compared with spectra of the [100] superlattice and differences due to different crystallographic structure were analyzed. It was found that the energies of folded acoustical modes are higher in the [110] superlattice due to higher sound velocity in the [110] direction. Confined transverse optical phonons were a dominant feature of the spectrum of the [110] superlattice which allowed observation of the folding of transverse optical phonons. Stronger intensity of interface modes and lower intensity of folded acousti-cal modes in the [110] superlattice indicated that the quality of the layer interfaces was worse than in the [100] superlattice.

Fabrication and characterization of ZnMgO nanowalls grown on 4H-SiC by molecular beam epitaxy

2019 ◽  
Vol 52 (1) ◽  
pp. 168-170
Author(s):  
Mieczyslaw A. Pietrzyk ◽  
Aleksandra Wierzbicka ◽  
Marcin Stachowicz ◽  
Dawid Jarosz ◽  
Adrian Kozanecki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Growth Conditions ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fabrication And Characterization

Control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic devices. This paper reports the growth conditions and structural properties of ZnMgO nanowalls grown on the Si face of 4H-SiC substrates by molecular beam epitaxy without catalysts and buffer layers. Images from scanning electron microscopy revealed that the ZnMgO nanowalls are arranged in parallel rows following the stripe morphology of the SiC surface, and their thickness is around 15 nm. The crystal quality of the structures was evaluated by X-ray diffraction measurements.

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